IP Library Granted Patent US 11,584,985
Granted Patent B2
US 11,584,985 · App. 16/531,882 · Granted Feb 21, 2023

Sputter trap having a thin high purity coating layer and method of making the same

Inventors: Jaeyeon Kim (Liberty Lake, WA); Patrick Underwood (Spokane, WA); Susan D. Strothers (Mead, WA); Shih-Yao Lin (Hsinchu, TW); Michael D. Payton (Rockford, WA); Scott R. Sayles (Mead, WA)
Assignee: Honeywell International Inc.
C23C14/564C23C14/3407H01J37/3435H01J37/3491
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,584,985
App. No.
16/531,882
Granted
Feb 21, 2023
Kind
B2
Abstract

A sputtering chamber component including a front surface, a back surface opposite the front surface, and a sputter trap formed on at least a portion of the back surface, and a coating of metallic particles formed on the sputter trap. The coating has a thickness from about 0.025 mm to about 2.54 mm (0.001 inches to about 0.1 inches) and is substantially free of impurities, and the particles of the coating are substantially diffused.

Claims (23)

1. A sputtering chamber component comprising:

a front surface formed of an aluminum or copper alloy;

a back surface opposite the front surface;

a sputter trap formed on at least a portion of the front surface, the sputter trap having a surface roughness greater than the back surface of the sputtering chamber component; and

a coating of titanium particles formed on the sputter trap, the coating having a thickness from about 0.025 mm to about 2.54 mm (0.001 inches to about 0.1 inches) and is at least about 99.99% pure;

wherein a macrotexture is formed on the sputter trap;

wherein the particles of the coating are substantially diffused and have plastic deformation.

2. The sputtering chamber component of claim 1 , wherein the coating is at least about 99.995% pure.

3. The sputtering chamber component of claim 1 , wherein a concentration of metal-carbide at a surface of the coating is about 70% to 100% less than a concentration of metal-carbide in the front surface of the sputter trap before the coating is applied.

4. The sputtering chamber component of claim 1 , wherein a surface of the coating is substantially free of metal-carbides.

5. The sputtering chamber component of claim 1 , wherein the titanium particles of the coating are uniformly distributed throughout the coating.

6. The sputtering chamber component of claim 1 , wherein the particles of the coating have an average particle size from about 200 mesh to about 320 mesh.

7. The sputtering chamber component of claim 1 , wherein the coating has a thickness from about 0.025 mm to about 0.25 mm (0.001 inches to about 0.01 inches).

8. The sputtering chamber component claim 1 , wherein the sputtering chamber component is a backing plate of a sputtering target assembly.

9. The sputtering chamber component of claim 1 , wherein a microtexture is formed onto the macrotexture.

10. A method of forming a sputter trap on a sputtering chamber component, the method comprising:

cold spraying titanium particles on at least a portion of a textured surface of an aluminum or copper alloy of the sputtering chamber component such that the particles undergo plastic deformation and adhere to the textured surface to form a layer in which the individual particles are substantially indistinguishable from one another, the layer having a thickness from about 0.025 mm to about 2.54 mm (0.001 inches to about 0.1 inches) and is from about 99.99% to about 99.995% pure;

wherein a macrotexture is formed on the sputter trap.

11. The method of claim 10 , further comprising forming the textured surface on at least a portion of the sputtering chamber component by bead blasting, knurling, or machining.

12. The method of claim 10 , wherein a concentration of metal-carbide at a surface of the layer is less than 70% of a concentration of metal-carbide in the at least a portion of the textured surface of the sputtering chamber component before the layer is applied.

13. The method of claim 10 , wherein the thickness of the layer is from about 0.025 mm to about 0.25 mm (0.001 inches to about 0.01 inches).

14. The method of claim 10 , wherein the thickness of the layer is from about 0.025 mm to about 0.127 mm (0.001 inches to about 0.005 inches).

15. The sputtering chamber component of claim 10 , wherein a microtexture is formed onto the macrotexture.

Assignments (3)
NUNC PRO TUNC ASSIGNMENT Recorded Apr 13, 2026
From: HONEYWELL INTERNATIONAL INC.
To: SOLSTICE ADVANCED MATERIALS US, INC.
Reel/Frame 074350/0321 →
SECURITY INTEREST Recorded Jan 12, 2026
From: SOLSTICE ADVANCED MATERIALS US, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 074569/0260 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 19, 2019
From: KIM, JAEYEON; UNDERWOOD, PATRICK; STROTHERS, SUSAN D.; LIN, SHIH-YAO; PAYTON, MICHAEL D.; SAYLES, SCOTT R.
To: HONEYWELL INTERNATIONAL INC.
Reel/Frame 050091/0396 →