Semiconductor device
A semiconductor device may include a semiconductor substrate, an insulator film provided directly or indirectly on the semiconductor substrate, a main electrode for power provided on the insulator film, a pad for signal provided on the insulator film. The insulator film may include a cell region where the main electrode is provided and a pad region where the pad is provided. The cell region and the pad region of the insulator film each may include a contact hole. A height position of the contact hole located within the pad region may be higher than a height position of the contact hole located within the cell region. A width of the contact hole located within the pad region may be greater than a width of the contact hole located within the cell region.
1. A semiconductor device, comprising:
a semiconductor substrate;
an insulator film provided directly or indirectly on the semiconductor substrate;
a main electrode for power provided on the insulator film; and
a pad for signal provided on the insulator film,
wherein
the insulator film comprises a cell region where the main electrode is provided and a pad region where the pad is provided,
the cell region and the pad region of the insulator film each comprise a contact hole,
a height position of the contact hole located within the pad region is higher than a height position of the contact hole located within the cell region,
a width of the contact hole located within the pad region is greater than a width of the contact hole located within the cell region,
a contact plug is provided in the contact hole located within the pad region,
a material of the contact plug is different from a material of the pad,
a top surface of the contact plug is in contact with the pad, and
the top surface of the contact plug is dented in a V-shape and forms an angle larger than 90 degrees at a deepest point of the top surface.
2. The semiconductor device according to claim 1 , wherein
the contact hole located within the pad region comprises a top end located close to the pad and a bottom end located close to the semiconductor substrate, and
the width of the contact hole located within the pad region is greater at the top end than at the bottom end.
3. The semiconductor device according to claim 2 , wherein the width of the contact hole located within the pad region continuously increases from the bottom end toward the top end.
4. The semiconductor device according to claim 2 , wherein the width at the top end of the contact hole located within the pad region is more than 1.3 times as large as the width at the bottom end of the contact hole located within the pad region.
5. A semiconductor device, comprising:
a semiconductor substrate;
an insulator film provided directly or indirectly on the semiconductor substrate;
a main electrode for power provided on the insulator film; and
a pad for signal provided on the insulator film,
wherein
the insulator film comprises a cell region where the main electrode is provided and a pad region where the pad is provided,
the cell region and the pad region of the insulator film each comprise a contact hole,
a height position of the contact hole located within the pad region is higher than a height position of the contact hole located within the cell region,
a width of the contact hole located within the pad region is greater than a width of the contact hole located within the cell region, and
a contact plug is provided in the contact hole located within the pad region,
wherein a top surface of the contact plug is in contact with the pad, and the top surface of the contact plug is dented in a V-shape.
6. The semiconductor device according to claim 5 , wherein the top surface of the contact plug forms an angle larger than 90 degrees at a deepest point of the top surface.
7. A semiconductor device, comprising:
a semiconductor substrate;
an insulator film provided directly or indirectly on the semiconductor substrate;
a main electrode for power provided on the insulator film; and
a pad for signal provided on the insulator film,
wherein
the insulator film comprises a cell region where the main electrode is provided and a pad region where the pad is provided,
the cell region and the pad region of the insulator film each comprise a contact hole, and
a contact plug is provided in the contact hole located within the pad region,
wherein a top surface of the contact plug is in contact with the pad, and the top surface of the contact plug is dented in a V-shape.
8. The semiconductor device according to claim 7 , wherein the top surface of the contact plug forms an angle larger than 90 degrees at a deepest point of the top surface.
9. The semiconductor device according to claim 7 , wherein a height position of the contact hole located within the pad region is higher than a height position of the contact hole located within the cell region.
10. The semiconductor device according to claim 7 , wherein a width of the contact hole located within the pad region is greater than a width of the contact hole located within the cell region.