Memory system
According to one embodiment, a memory system includes a NAND flash memory that has a first area, a second area, and a third area, and a controller that controls data transfer between a host device and the memory system. The controller writes data transmitted from the host device to the first area by a first method of storing 1-bit data per memory cell, and at a first timing, reads at least a part of data stored in the first area to generate one unit data, compresses the unit data, and writes the compressed unit data to the second area. At a second timing, the controller decompresses the read compressed unit data from the second area, and writes the decompressed unit data to the third area by a second method of storing a plurality of bits of data per memory cell.
1. A memory system for use with a host device, comprising:
a nonvolatile semiconductor memory including a first area, a second area, and a third area; and
a controller configured to:
write data received from the host device to the first area by storing 1-bit data per memory cell;
at a first timing, read at least a part of the data stored in the first area to generate one unit data, compress the unit data, and write the compressed unit data to the second area; and
at a second timing, read the compressed unit data from the second area, decompress the read compressed unit data, and write the decompressed unit data to the third area by storing a plurality of bits of data per memory cell.
2. The memory system according to claim 1 , wherein the controller is further configured to determine the first timing based on an amount of area free in the first area.
3. The memory system according to claim 1 , wherein the controller is further configured to determine the second timing based on an access frequency from the host device.
4. The memory system according to claim 1 , further comprising:
a compressed-data address table in which a logical address of the data constituting the compressed unit data is registered.
5. The memory system according to claim 1 , wherein
at least a portion of the compressed unit data is written to a continuous sequential area designated by one data size and one physical address of the second area.
6. The memory system according to claim 1 , further comprising:
a compression rate information storage unit that stores compression rate information on individual compression rates for the data to be written to the first area, wherein
the controller is configured to use the compression rate information to generate the unit data in an order according to the relatively higher compression rate information.
7. The memory system according to claim 6 , wherein
sizes of the second area and the first area are changed according to the compression rate of the compressed unit data written to the second area and a size of the free area of the first area.
8. A method, comprising:
receiving, from a host device, a request to write data to a nonvolatile semiconductor memory that includes a first area, a second area, and a third area;
determining whether a free area in the first area satisfies an allowable value;
writing, based on the determination, the data either to the first area of the nonvolatile semiconductor memory by storing 1-bit data per memory cell or to the third area of the nonvolatile semiconductor memory by storing a plurality of bits of data per memory cell;
determining a first timing to read at least a part of the data stored in the first area to generate one unit data, compress the unit data;
writing the compressed unit data to the second area; and
determining second timing to read the compressed unit data from the second area, decompress the read compressed unit data, and write the decompressed unit data to the third area by storing a plurality of bits of data per memory cell.
9. The method of claim 8 , wherein the first timing is determined based on the free area in the first area satisfying the allowable value.
10. The method of claim 8 , wherein the second timing is determined based on an access frequency from the host device.