Polycrystalline diamond compact, and related methods and applications
Embodiments relate to polycrystalline diamond compacts (“PDCs”) including a polycrystalline diamond (“PCD”) table in which a metal-solvent catalyst is alloyed with at least one alloying element to improve thermal stability of the PCD table. In an embodiment, a PDC includes a substrate and a PCD table bonded to the substrate. The PCD table includes diamond grains defining interstitial regions. The PCD table includes an alloy comprising at least one Group VIII metal and at least one metallic alloying element that lowers a temperature at which melting of the at least one Group VIII metal begins. The alloy includes one or more solid solution phases comprising the at least one Group VIII metal and the at least one metallic alloying element and one or more intermediate compounds comprising the at least one Group VIII metal and the at least one metallic alloying element.
1. A method of fabricating a polycrystalline diamond compact, the method comprising:
providing an assembly, the assembly including:
a carbide substrate having at least one group VIII metal therein;
an alloying material including at least one alloying element having a melting temperature greater than a melting temperature of the at least one group VIII metal;
a plurality of bonded diamond grains disposed between the carbide substrate and the alloying material, the plurality of bonded diamond grains defining a plurality of interstitial regions therebetween, at least some of the plurality of interstitial regions having the at least one group VIII metal therein; and
heating the assembly to a temperature above the melting temperature of the at least one group VIII metal.
2. The method of claim 1 , wherein the at least one alloying element includes at least one element selected from the group consisting of silver, gold, aluminum, antimony, boron, carbon, cerium, chromium, copper, dysprosium, erbium, iron, gallium, germanium, gadolinium, hafnium, holmium, indium, lanthanum, magnesium, manganese, molybdenum, niobium, neodymium, nickel, praseodymium, platinum, ruthenium, sulfur, scandium, selenium, silicon, samarium, tin, tantalum, terbium, tellurium, thorium, titanium, vanadium, tungsten, yttrium, zinc, zirconium.
3. The method of claim 1 , wherein heating the assembly to a temperature above the melting temperature of the at least one group VIII metal includes alloying the at least one group VIII metal with the at least one alloying element under high-pressure high-temperature (“HPHT”) conditions.
4. The method of claim 1 , wherein the at least one alloying element includes at least one additional element selected from the group consisting of iron and tungsten.
5. The method of claim 1 , wherein the at least one alloying element is selected from the group consisting of boron and copper.
6. The method of claim 1 , wherein the alloying material includes one or more of particles of the at least one alloying element, a disc of the at least one alloying element, a green body of the at least one alloying element, or combinations thereof.
7. The method of claim 1 , wherein the plurality of bonded diamond grains have an average particle size of 20 μm or less.
8. The method of claim 1 , wherein the carbide substrate includes a cobalt cemented tungsten-carbide substrate.
9. The method of claim 1 , wherein the carbide substrate is bonded to the plurality of bonded diamond grains.
10. The method of claim 1 , wherein providing an assembly includes:
sintering a mass of diamond particles and the carbide substrate to form a polycrystalline diamond compact including the plurality of bonded diamond grains bonded to the carbide substrate; and
positioning the alloying material adjacent to the plurality of bonded diamond grains.
11. The method of claim 1 , wherein heating the assembly to a temperature above the melting temperature of the at least one group VIII metal includes infiltrating at least some of the at least one alloying element into at least some of the plurality of interstitial regions.
12. A method of fabricating a polycrystalline diamond compact, the method comprising:
forming an assembly, the assembly including:
a carbide substrate having at least one group VIII material therein;
an alloying material including at least one alloying element having a melting temperature greater than a melting temperature of the at least one group VIII material;
a polycrystalline diamond body disposed between the carbide substrate and the alloying material, the polycrystalline diamond body including a plurality of bonded diamond grains defining a plurality of interstitial regions therebetween, at least some of the plurality of interstitial regions having the at least one group VIII material therein; and
alloying the at least one alloying element with the at least one group VIII material in at least some of the plurality of interstitial regions.
13. The method of claim 12 , wherein the at least one alloying element includes at least one element selected from the group consisting of silver, gold, aluminum, antimony, boron, carbon, cerium, chromium, copper, dysprosium, erbium, iron, gallium, germanium, gadolinium, hafnium, holmium, indium, lanthanum, magnesium, manganese, molybdenum, niobium, neodymium, nickel, praseodymium, platinum, ruthenium, sulfur, scandium, selenium, silicon, samarium, tin, tantalum, terbium, tellurium, thorium, titanium, vanadium, tungsten, yttrium, zinc, zirconium.
14. The method of claim 12 , wherein alloying the at least one alloying element with the at least one group VIII material in at least some of plurality of the interstitial regions includes heating the assembly to a temperature above the melting temperature of the at least one group VIII material.
15. The method of claim 12 , wherein alloying the at least one alloying element with the at least one group VIII material in at least some of the plurality of interstitial regions includes alloying the at least one group VIII material with the at least one alloying element under high-pressure high-temperature (“HPHT”) conditions.
16. The method of claim 12 , wherein:
the polycrystalline diamond body includes an interfacial surface bonded to the carbide substrate, an upper surface spaced from the interfacial surface, and a lateral surface extending between the interfacial surface and the upper surface; and
forming an assembly includes positioning the alloying material on the upper surface.
17. The method of claim 12 , wherein:
the polycrystalline diamond body includes an interfacial surface bonded to the carbide substrate, an upper surface spaced from the interfacial surface, and a lateral surface extending between the interfacial surface and the upper surface; and
alloying the at least one alloying element with the at least one group VIII material in at least some of the plurality of interstitial regions includes infiltrating the at least one alloying element from the upper surface into the plurality of interstitial regions in a concentration gradient that decreases with distance from the upper surface.
18. The method of claim 12 , wherein forming an assembly includes sintering a mass of diamond particles and the carbide substrate to form a polycrystalline diamond compact having the polycrystalline diamond body bonded to the carbide substrate.
19. A method of fabricating a polycrystalline diamond compact, the method comprising:
forming an assembly, the assembly including:
a carbide substrate having a cementing constituent including at least one group VIII material;
an alloying material including at least one alloying element having a melting temperature greater than a melting temperature of the at least one group VIII material;
a polycrystalline diamond body disposed between the carbide substrate and the alloying material, the polycrystalline diamond body including a plurality of bonded diamond grains defining a plurality of interstitial regions therebetween, at least some of the plurality of interstitial regions having the at least one group VIII material therein, the polycrystalline diamond body having an interfacial surface bonded to the carbide substrate, an upper surface spaced from the interfacial surface, and a lateral surface extending between the interfacial surface and the upper surface; and
alloying the at least one alloying element with the at least one group VIII material in at least some of the plurality of interstitial regions, the at least one alloying element including at least one element selected from the group consisting of silver, gold, aluminum, antimony, boron, carbon, cerium, chromium, copper, dysprosium, erbium, iron, gallium, germanium, gadolinium, hafnium, holmium, indium, lanthanum, magnesium, manganese, molybdenum, niobium, neodymium, nickel, praseodymium, platinum, ruthenium, sulfur, antimony, scandium, selenium, silicon, samarium, tin, tantalum, terbium, tellurium, thorium, titanium, vanadium, tungsten, yttrium, zinc, zirconium.
20. The method of claim 19 , wherein alloying the at least one alloying element with the at least one group VIII material in at least some of the plurality of interstitial regions includes infiltrating the at least one alloying element from the upper surface into the plurality of interstitial regions in a concentration gradient that decreases with distance from the upper surface.
21. The method of claim 19 , wherein alloying the at least one alloying element with the at least one group VIII material in at least some of the plurality of interstitial regions includes alloying the at least one alloying element with the at least one group VIII material under high-pressure high-temperature (“HPHT”) conditions.