Semiconductor device

1. A semiconductor device comprising:

a semiconductor layer;

a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film; and

an electrode layer disposed on the surface of the charge storage layer via a second insulating film, wherein the charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen.

2. The semiconductor device according to claim 1 , wherein the electrode layer includes a plurality of electrode layers disposed on a substrate alternately with a plurality of insulating layers.

3. The semiconductor device according to claim 1 , wherein the first layer includes an amorphous film.

4. The semiconductor device according to claim 2 , wherein the first layer includes an amorphous film.

5. The semiconductor device according to claim 1 , wherein the third layer includes a silicon oxide film or a silicon oxynitride film.

6. The semiconductor device according to claim 2 , wherein the third layer includes a silicon oxide film or a silicon oxynitride film.

7. The semiconductor device according to claim 1 , wherein the second layer includes a first film disposed between the first layer and the third layer, and a second film disposed on the opposite side of the third layer from the first film.

8. The semiconductor device according to claim 7 , wherein the first film is in contact with the first layer and with the third layer.

9. The semiconductor device according to claim 7 , wherein the second film further contains elemental aluminum and elemental oxygen.

10. The semiconductor device according to claim 8 , wherein the second film further contains elemental aluminum and elemental oxygen.

11. The semiconductor device according to claim 7 , wherein the second layer further includes a third film disposed on the opposite side of the first layer from the first film.

12. The semiconductor device according to claim 8 , wherein the second layer further includes a third film disposed on the opposite side of the first layer from the first film.

13. The semiconductor device according to claim 1 , wherein the semiconductor device is a NAND memory.

14. The semiconductor device according to claim 1 , wherein the first layer is not in contact with the first insulating film or the second insulating film.

15. A semiconductor device comprising:

a semiconductor layer;

a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film; and

an electrode layer disposed on the surface of the charge storage layer via a second insulating film, wherein the charge storage layer includes a first layer containing an elemental metal and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental silicon and elemental nitrogen, wherein the first layer is provided between the second layer and the third layer.

16. The semiconductor device according to claim 15 , wherein the charge storage layer further includes a fourth layer containing elemental oxygen.

17. The semiconductor device according to claim 15 , wherein the elemental metal is elemental aluminum, elemental hafnium or elemental zirconium.

18. The semiconductor device according to claim 15 , wherein the first layer is not in contact with the first insulating film or the second insulating film.

19. The semiconductor device according to claim 16 , wherein the fourth layer further contains elemental silicon.

20. The semiconductor device according to claim 16 , wherein the charge storage layer further includes a fifth layer containing elemental silicon and elemental nitrogen, the fourth layer being provided between the third layer and the fifth layer.