Semiconductor device having a metallic oxide or metallic hydroxide barrier layer
A semiconductor device according to an embodiment includes a substrate. An insulating film is provided above the substrate. Electrode pads are provided on the insulating film. Metallic bumps are respectively provided on surfaces of the electrode pads. A sidewall film comprises a metallic oxide or a metallic hydroxide provided on side surfaces of the metallic bumps. A barrier metal layer comprises first portions each provided between one of the metallic bumps and a corresponding one of the electrode pads and comprising a metal, and second portions provided at least on the electrode pads at a periphery of the metallic bumps and comprising a metallic oxide or a metallic hydroxide.
1. A semiconductor device comprising:
a substrate;
an insulating film provided above the substrate;
electrode pads provided on the insulating film;
metallic bumps respectively provided on surfaces of the electrode pads;
a sidewall film comprising a metallic oxide or a metallic hydroxide provided on side surfaces of the metallic bumps; and
a barrier metal layer comprising first portions each provided between one of the metallic bumps and a corresponding one of the electrode pads and comprising a metal, and second portions provided at least on the electrode pads at a periphery of the metallic bumps and comprising a metallic oxide or a metallic hydroxide.
2. The device of claim 1 , wherein the barrier metal layer has an area larger than a contact area between the electrode pads and the metallic bumps.
3. The device of claim 2 , wherein
the electrode pads comprise aluminum,
the metallic bumps comprise copper,
the sidewall film comprises a copper oxide or a copper hydroxide,
the first portions are a stack film of titanium and copper, and
the second portions are a stack film of titanium and a copper oxide or a copper hydroxide.
4. The device of claim 1 , wherein
the electrode pads comprise aluminum,
the metallic bumps comprise copper,
the sidewall film comprises a copper oxide or a copper hydroxide,
the first portions are a stack film of titanium and copper, and
the second portions are a stack film of titanium and a copper oxide or a copper hydroxide.
5. The device of claim 1 , further comprising
metallic balls respectively provided on the metallic bumps, and
a diffusion prevention film provided between the metallic balls and the metallic bumps.
6. The device of claim 5 , wherein
the metallic balls comprise tin, and
the diffusion prevention film comprises nickel.