Semiconductor memory device
According to one embodiment, a semiconductor memory device includes a memory cell array; a first insulating layer; and a passivation film. The memory cell array includes first interconnect layers and a first memory pillar. The first interconnect layers extend in a first direction substantially parallel to a semiconductor substrate. The first memory pillar passes through the first interconnect layers and extends in a second direction substantially perpendicular to the semiconductor substrate. The first insulating layer is provided above the memory cell array. The passivation film is provided on the first insulating layer, and includes a protrusion at least above the memory cell array and between the passivation film and the first insulating layer.
1. A semiconductor memory device comprising:
a memory cell array that includes a plurality of first interconnect layers and a first memory pillar, the first interconnect layers extending in a first direction substantially parallel to a semiconductor substrate, and the first memory pillar passing through the first interconnect layers and extending in a second direction substantially perpendicular to the semiconductor substrate;
a first insulating layer above the memory cell array; and
a passivation film on the first insulating layer, the passivation film including a protrusion at least above the memory cell array and between the passivation film and the first insulating layer,
wherein a length of the protrusion in the first direction is larger than a length of the protrusion in a third direction that is substantially parallel to the semiconductor substrate and intersects the first direction.
2. The device according to claim 1 , further comprising a second interconnect layer below the first insulating layer, the second interconnect layer including a side face and an upper face, the side face and the upper face being in contact with the first insulating layer,
wherein a height position of a bottom face of the protrusion from the semiconductor substrate is lower than a height position of the upper face of the second interconnect layer from the semiconductor substrate.
3. The device according to claim 1 , wherein the protrusion extends in the first direction.
4. The device according to claim 1 , further comprising a second insulating layer between the first insulating layer and the passivation film,
wherein the protrusion passes through the second insulating layer to be in contact with the first insulating layer.
5. The device according to claim 4 , wherein the second insulating layer has a compressive stress.
6. The device according to claim 4 , wherein a side face of the protrusion is in contact with the first insulating layer and the second insulating layer.
7. The device according to claim 1 , wherein the passivation film is silicon nitride having a compressive stress.
8. The device according to claim 1 , further comprising a resin above the passivation film.
9. The device according to claim 1 , wherein the first memory pillar includes a charge storage layer and a semiconductor layer.
10. A semiconductor memory device comprising:
a memory cell array that includes a plurality of first interconnect layers and a first memory pillar, the first interconnect layers extending in a first direction substantially parallel to a semiconductor substrate, and the first memory pillar passing through the first interconnect layers and extending in a second direction substantially perpendicular to the semiconductor substrate;
a first insulating layer above the memory cell array;
a passivation film on the first insulating layer, the passivation film including a protrusion at least above the memory cell array and between the passivation film and the first insulating layer; and
a second insulating layer between the first insulating layer and the passivation film,
wherein the protrusion passes through the second insulating layer to be in contact with the first insulating layer.
11. The device according to claim 10 , further comprising a second interconnect layer below the first insulating layer, the second interconnect layer including a side face and an upper face, the side face and the upper face being in contact with the first insulating layer,
wherein a height position of a bottom face of the protrusion from the semiconductor substrate is lower than a height position of the upper face of the second interconnect layer from the semiconductor substrate.
12. The device according to claim 10 , wherein the protrusion extends in the first direction.
13. The device according to claim 10 , wherein the protrusion has a lattice shape.
14. The device according to claim 10 , wherein the passivation film is silicon nitride having a compressive stress.
15. The device according to claim 10 , wherein the second insulating layer has a compressive stress.
16. The device according to claim 10 , wherein a side face of the protrusion is in contact with the first insulating layer and the second insulating layer.