Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes placing a substrate in a housing, supplying first gas containing molybdenum to the housing to form a film that contains molybdenum, on the substrate, removing the substrate with the formed film from the hosing, and then supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing.
1. A method of manufacturing a semiconductor device comprising:
placing a substrate in a housing;
supplying first gas containing molybdenum to the housing to form a film that contains molybdenum, on the substrate;
removing the substrate with the formed film from the housing; and
after the substrate with the formed film is removed from the housing, supplying second gas containing chlorine to the housing to remove molybdenum deposited on a surface of the housing.
2. The method according to claim 1 , wherein the second gas has a vapor pressure of 10 torr or higher at 150° C.
3. The method according to claim 1 , wherein the second gas contains Cl 2 gas or HCl gas.
4. The method according to claim 1 , wherein said supplying the second gas comprises supplying mixed gas containing the second gas and at least one of H 2 gas and O 2 gas to the housing.
5. The method according to claim 4 , wherein the mixed gas contain the O 2 gas, and a ratio of the O 2 gas in the mixed gas is less than or equal to 50%.
6. The method according to claim 4 , wherein the mixed gas contain the H 2 gas, and a ratio of the H 2 gas in the mixed gas is less than or equal to 1%.
7. The method according to claim 1 , further comprising:
heating at least one of a structural member of the housing, a space in the housing, a component in the housing, and piping for discharging gas from the housing, to 50° C. or higher while the second gas is supplied to the housing.
8. The method according to claim 1 , further comprising:
forming multiple first layers and multiple second layers alternately on the substrate; and
forming multiple holes between the second layers by removing the first layers;
wherein the film is formed in each of the multiple holes.
9. The method according to claim 1 , wherein
said placing the substrate in the housing comprises placing the substrate on a stage,
said supplying the first gas comprises supplying the first gas through a shower head that is provided in the housing and faces the stage, and
said supplying the second gas comprises supplying the second gas through the shower head.
10. The method according to claim 1 , wherein said placing the substrate in the housing comprises placing a plurality of substrates set in a rack structure in the housing, and the substrate is one of the plurality of substrates.