DOPANT ACTIVATION ANNEAL FOR CORRELATED ELECTRON DEVICE
Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) device. In particular embodiments, formation of a CEM device may include application of rapid thermal annealing to doped layers of a metal oxide.
1 . A method comprising:
forming one or more layers of a metal oxide to be disposed between first and second metal layers, the one or more layers of the metal oxide to comprise a dopant; and
applying one or more periods of rapid thermal annealing (RTA) to the one or more layers of the metal oxide to provide one or more layers of a correlated electron material (CEM).
2 . The method of claim 1 , and further comprising forming the second metal layer over the one or more layers of the metal oxide, wherein applying the one or more periods of rapid thermal anneal to comprise application of at least one of the one or more periods of rapid thermal anneal prior to the forming of the second layer over the one or more layers of the metal oxide.
3 . The method of claim 2 , wherein the application of the at least one of the one or more periods of rapid thermal anneal prior to the forming of the second layer over the one or more layers of the metal oxide to at least in part assist in imparting a backdonation property to the one or more layers of the metal oxide and control a grain size of a polycrystal formed in the one or more layers of the metal oxide.
4 . The method of claim 1 , and further comprising forming the second metal layer over the one or more layers of the metal oxide, wherein applying the one or more periods of rapid thermal anneal to occur subsequent to the forming of the second metal layer over the one or more layers of the metal oxide.
5 . The method of claim 4 , wherein the application of the at least one of the one or more periods of rapid thermal anneal subsequent to the forming of the second metal layer over the one or more layers of the metal oxide to at least in part assist in imparting a backdonation property to the one or more layers of the metal oxide and heal an interface between the one or more layers of the metal oxide and the second metal layer.
6 . The method of claim 1 , and further comprising etching at least a portion of the second metal layer and the one or more layers of the metal oxide, wherein applying of at least one of the one or more periods of rapid thermal anneal to occur subsequent to the etching of the at least a portion of the second metal layer and the one or more layers of the CEM.
7 . The method of claim 6 , wherein the application of the at least one of the one or more periods of rapid thermal anneal subsequent to the etching of the at least a portion of the second metal layer and the one or more layers of the CEM to at least in part restore a backdonation property to etched sidewalls of the one or more layers of the metal oxide.
8 . The method of claim 1 , wherein the metal oxide to comprise a nickel oxide and the CEM to comprise an atomic concentration of carbon of at least one part per million.
9 . The method of claim 8 , wherein application of the one or more periods of RTA to the one or more layers of the metal oxide to at least partially activate the carbon as a ligand to bond with metal oxide to thereby increase p-type behavior of the one or more layers of metal oxide.
10 . The method of claim 1 , wherein applying at least one of the one or more periods of rapid thermal annealing to the one or more layers of the metal oxide to comprise application of one or more laser sources or one or more heat lamp sources, or a combination thereof.
11 . The method of claim 1 , and further comprising disposing the one or more layers of the metal oxide over a chuck during at least a portion of at least one of the one or more periods of RTA, the chuck to sink heat from at least a portion of the one or more layers during the at least a portion of the at least one of the one or more periods of RTA.
12 . The method of claim 1 , wherein application of at least one of the one or more periods of RTA to comprise raising a temperature of at least one portion of the one or more layers of metal oxide by at least 100K over a period of no more than 1.0 sec.
13 . The method of claim 1 , wherein application of at least one of the one or more periods of RTA to comprise raising a temperature of at least one portion of the one or more layers of metal oxide to a peak temperature between 300°C. and 500° C. and maintaining the peak temperature for a duration of 10.0 to 1000.0 nanoseconds.
14 . An apparatus comprising:
a substrate, the substrate to support a device comprising one or more layers of a metal oxide to be disposed over a first metal layer; and
one or more heat sources adapted to:
apply one or more periods of rapid thermal annealing (RTA) to the one or more layers of the metal oxide while disposed over the substrate to provide one or more layers of a correlated electron material (CEM).
15 . The apparatus of claim 14 , and further comprising a chuck disposed over the substrate, and wherein the chuck to be adapted to sink heat away from the device while the device is disposed on the chuck during at a portion of at least one of the one or more periods of RTA.
16 . The apparatus of claim 14 , wherein the device to comprise a first metal layer and a second metal layer, the one or more layers of the metal oxide to be disposed between the first metal layer and the second metal layer, and wherein the one or more laser sources to and further comprising forming the second metal layer over the one or more layers of the metal oxide, wherein applying the one or more periods of rapid thermal anneal to comprise application of at least one of the one or more periods of rapid thermal anneal prior to the forming of the second layer over the one or more layers of the metal oxide.
17 . The apparatus of claim 14 , wherein the device further to comprise a first metal layer, the one or more layers of the metal oxide to comprise a and further comprising forming the second metal layer over the one or more layers of the metal oxide, wherein applying the one or more periods of rapid thermal anneal to occur prior to the forming of the second layer over the one or more layers of the metal oxide.
18 . The apparatus of claim 14 , wherein application of at least one of the one or more periods of RTA to comprise an increase of a temperature of at least one portion of the one or more layers of metal oxide by at least 100K over a period of no more than 1 nec.
19 . The apparatus of claim 14 , wherein application of at least one of the one or more periods of RTA to comprise an increase of a temperature of at least one portion of the one or more layers of metal oxide to a peak temperature between 300° C. and 500° C., the peak temperature to be maintained for a duration of 10.0 to 1000.0 nanoseconds.
20 . The apparatus of claim 14 , wherein the one or more heat sources to comprise at least one laser source or at least one heat lamp source, or a combination thereof.
21 . The apparatus of claim 14 , and further comprising one or more processors to generate one or more signals to control power levels of at least one of the one or more heat sources during at least one of the one or more periods of RTA.