IP Library Granted Patent US 11,443,963
Granted Patent B2
US 11,443,963 · App. 16/557,705 · Granted Sep 13, 2022

Substrate processing method and substrate processing apparatus

Inventors: Mana Tanabe (Yokohama Kanagawa, JP); Kosuke Takai (Yokohama Kanagawa, JP); Kenji Masui (Kawasaki Kanagawa, JP); Kaori Umezawa (Yokohama Kanagawa, JP)
Assignee: KIOXIA CORPORATION
H01L21/67051B08B7/0014H01L21/02057H01L21/67103
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Quick Facts
Patent No.
US 11,443,963
App. No.
16/557,705
Granted
Sep 13, 2022
Kind
B2
Abstract

A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.

Claims (27)

1. A substrate processing method, comprising:

dispensing processing liquid onto a substrate having a first surface to form a liquid film covering the first surface;

cooling the substrate to below a freezing point of the processing liquid using a cooling fluid brought into contact with a second surface of the substrate opposite the first surface to form a frozen layer of processing liquid from the liquid film on the first surface;

dispensing a droplet of processing liquid onto the frozen layer of processing liquid on the first surface at a specified location to thaw a portion of the frozen layer of processing liquid at the specified location;

forming a frozen droplet portion at the specified location, the frozen droplet portion comprising the dispensed droplet of processing liquid and the thawed portion of the frozen layer; and

thawing the frozen droplet portion.

2. The substrate processing method according to claim 1 , wherein the forming and thawing of the frozen droplet portion is repeated.

3. The substrate processing method according to claim 1 , further comprising:

acquiring foreign substance location information including the specified location on the first surface of the substrate.

4. The substrate processing method according to claim 1 , further comprising:

hydrophobizing the first surface before cooling the substrate.

5. The substrate processing method according to claim 1 , further comprising:

applying hexamethyldisilazane to the first surface before cooling the substrate.

6. A substrate processing method, comprising:

acquiring a location of a foreign substance on a first surface of a substrate;

dispensing a processing liquid on the first surface of the substrate and forming a film of processing liquid over the first surface;

cooling the substrate to below a freezing point of the processing liquid by contacting a second surface of the substrate opposite the first surface with a cooling fluid and forming a frozen film of processing liquid on the first surface of the substrate;

dispensing a droplet of processing liquid onto the frozen film of processing liquid on the first surface of the substrate at the location of the foreign substance to thaw a portion of the frozen film at the location;

forming a frozen droplet portion at the location, the frozen droplet portion comprising the dispensed droplet of processing liquid and the thawed portion of the frozen film; and

thawing and removing the processing liquid including the frozen droplet portion from the first surface.

7. The substrate processing method of claim 6 , wherein the processing liquid comprises water.

8. The substrate processing method of claim 6 , wherein a plurality of droplets of processing liquid is dispensed at the location of the foreign substance.

9. The substrate processing method of claim 8 , wherein a length of time between dispensing of droplets is set to be greater than an expected crack generation time for the frozen droplet portion.

10. The substrate processing method according to claim 6 , further comprising:

hydrophobizing the first surface before dispensing the processing liquid on the first surface of the substrate and forming the film of processing liquid over the entire first surface.

11. The substrate processing method according to claim 10 , wherein the hydrophobizing the first surface is performed by application of hexamethyldisilazane.

12. The substrate process method according to claim 6 , wherein the substrate is an imprint template.

Assignments (2)
CHANGE OF NAME Recorded Jan 13, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058777/0822 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 13, 2019
From: TANABE, MANA; TAKAI, KOSUKE; MASUI, KENJI; UMEZAWA, KAORI
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 051279/0183 →