Power transistor junction temperature determination using a desaturation voltage sensing circuit
A measurement circuit device for a vehicle includes a power transistor and a voltage measurement circuit coupled to the power transistor that measures a voltage across the power transistor. The measurement circuit device also includes a microcontroller that determines a junction temperature using the measured voltage and adjusts a capacity of the power transistor based on the determined junction temperature. In some embodiments, the measurement circuit device may include a clamping device that clamps the voltage across the transistor when the transistor is off. The measurement circuit device may also include an analog-to-digital converter that converts the measured voltage from an analog value to a digital value.
1. A measurement circuit device for a vehicle, comprising:
a power transistor;
a voltage measurement circuit coupled to the power transistor that measures a voltage across the power transistor; and
a microcontroller configured to:
subtract a diode voltage associated with a diode from the measured voltage across the power transistor to calculate an adjusted measured voltage;
monitor a transistor current and a gate voltage;
determine a junction temperature using the transistor current, the gate voltage, and the adjusted measured voltage; and
adjust a capacity of the power transistor based on the junction temperature.
2. The measurement circuit device of claim 1 , further comprising:
an analog to digital converter that converts the measured voltage from an analog value to a digital value; and wherein the microcontroller determines the junction temperature using the digital value.
3. The measurement circuit device of claim 1 , further comprising:
the voltage measurement circuit configured to clamp the measured voltage when the power transistor is turned off or is switching from an off state to an on state.
4. The measurement circuit device of claim 1 , wherein the voltage measurement circuit comprises a Desaturation Voltage Sensing Circuit.
5. The measurement circuit device of claim 1 , wherein the junction temperature comprises an increase in a previous junction temperature and the microcontroller is configured to decrease the capacity of the power transistor.
6. The measurement circuit device of claim 1 , wherein the junction temperature comprises a decrease in a previous junction temperature and the microcontroller is configured to increase the capacity of the power transistor.
7. The measurement circuit device of claim 1 , wherein the microcontroller is further configured to:
adjust a diode voltage drop before subtracting the diode voltage from the measured voltage.
8. The measurement circuit device of claim 7 , wherein the microcontroller is figured configured to determine a temperature of the diode.
9. The measurement circuit device of claim 8 , wherein the temperature of the diode is set to an internal ambient temperature.
10. A method of operating a power supply device for a vehicle, the method comprising:
a voltage measurement circuit coupled to a power transistor measuring a voltage across the power transistor;
a microcontroller subtracting a diode voltage associated with a diode from the measured voltage across the power transistor to calculate an adjusted measured voltage;
the microcontroller monitoring a transistor current and a gate voltage, and
determining a junction temperature using the transistor current, the gate voltage, and the adjusted measured voltage; and
the microcontroller adjusting a capacity of the power transistor based on the junction temperature.
11. The method of claim 10 , further comprising:
an analog to digital converter converting the measured voltage from an analog value to a digital value; and wherein the microcontroller determining the junction temperature using the measured voltage value comprises the microcontroller determining the junction temperature using the digital value.
12. The method of claim 10 , further comprising:
the voltage measurement circuit clamping the measured voltage when the power transistor is turned off or is switching from an off state to an on state.
13. The method of claim 10 , wherein the voltage measurement circuit comprises a Desaturation Voltage Sensing Circuit.
14. The method of claim 10 , wherein the junction temperature comprises an increase in a previous junction temperature, and wherein the microcontroller adjusting the capacity of the power transistor based on the junction temperature comprises the microcontroller decreasing the capacity of the power transistor.
15. The method of claim 10 , wherein the junction temperature comprises a decrease in a previous junction temperature, and wherein the microcontroller adjusting the capacity of the power transistor based on the junction temperature comprises the microcontroller increasing the capacity of the power transistor.
16. The method of claim 10 , further comprising: adjusting a diode voltage drop before subtracting the diode voltage from the measured voltage.
17. The method of claim 16 further comprising: determining a temperature of the diode.
18. The method of claim 17 , wherein the temperature of the diode is set to an internal ambient temperature.