Magnetic device and memory device
According to one embodiment, a magnetic device includes a stacked body including a first magnetic layer, a second magnetic layer, and a non-magnetic layer between the first magnetic layer and the second magnetic layer. The stacked body has a quadrangular planar shape, the stacked body has a first side dimension in a first direction parallel to a surface of a substrate and a thickness in a second direction perpendicular to the surface of the substrate, and a ratio of the first side dimension to the thickness is in a range of 0.10 to 4.0.
1. A magnetic device, comprising:
a substrate having a surface; and
a stacked body on the surface of the substrate and including a first magnetic layer, a second magnetic layer, a third magnetic layer, a metal layer, and a non-magnetic layer, the metal layer being between the second magnetic layer and the third magnetic layer, and the non-magnetic layer being between the first magnetic layer and the second magnetic layer, wherein
the stacked body has a quadrangular planar shape,
the stacked body has a first side dimension in a first direction parallel to the surface of the substrate and a thickness in a second direction orthogonal to the surface of the substrate, and
a ratio of the first side dimension to the thickness is in a range of 0.10 to 4.0.
2. The magnetic device according to claim 1 , wherein the first side dimension is in a range of 5 nm to 40 nm.
3. The magnetic device according to claim 2 , wherein the stacked body is a square pillar shape.
4. The magnetic device according to claim 2 , wherein the stacked body is a rectangular pillar shape with a second side dimension greater than the first side dimension.
5. The magnetic device according to claim 2 , wherein the quadrangular planar shape includes rounded corner portions.
6. The magnetic device according to claim 2 , wherein the quadrangular planar shape includes chamfered corner portions.
7. The magnetic device according to claim 1 , wherein the stacked body is a square pillar shape.
8. The magnetic device according to claim 1 , wherein the stacked body is a rectangular pillar shape with a second side dimension greater than the first side dimension.
9. The magnetic device according to claim 1 , wherein the quadrangular planar shape includes rounded corner portions.
10. The magnetic device according to claim 1 , wherein the quadrangular planar shape includes chamfered corner portions.
11. The magnetic device according to claim 1 , wherein the ratio is in a range of 0.28 to 2.5.
12. The magnetic device according to claim 1 , wherein the stacked body is a magneto-resistance effect element and is electrically connected between a word line and a bit line.
13. A memory device, comprising:
a first wiring extending in a first direction parallel to a surface of a substrate;
a second wiring extending in a second direction parallel to the surface of the substrate and intersecting the first direction; and
a memory cell between the first wiring and the second wiring, the memory cell including a magneto-resistance effect element having a first magnetic layer, a second magnetic layer, and a non-magnetic layer between the first magnetic layer and the second magnetic layer, wherein
the magneto-resistance effect element has a quadrangular planar shape,
the magneto-resistance effect element has a first side dimension in the first direction and a thickness in a third direction orthogonal to the surface of the substrate,
a ratio of the first side dimension to the thickness is in a range of 0.10 to 4.0,
the memory cell further includes a switching element including a first electrode, a second electrode, and a resistance change film between the first electrode and the second electrode,
the switching element is aligned with the magneto-resistance effect element in the third direction, and
the switching element has a quadrangular planar shape matching the quadrangular planar shape of the magneto-resistance effect element.
14. The memory device according to claim 13 , wherein the first side dimension is in a range of 5 nm to 40 nm.
15. The memory device according to claim 13 , wherein the magneto-resistance effect element is a square pillar shape.
16. The memory device according to claim 13 , wherein the magneto-resistance effect element further includes:
a third magnetic layer, and
a metal layer between the second magnetic layer and the third magnetic layer.
17. A memory device, comprising:
a first wiring extending in a first direction parallel to a surface of a substrate;
a second wiring extending in a second direction parallel to the surface of the substrate and intersecting the first direction; and
a memory cell between the first wiring and the second wiring, the memory cell including a magneto-resistance effect element having a first magnetic layer, a second magnetic layer, and a non-magnetic layer between the first magnetic layer and the second magnetic layer, wherein
the magneto-resistance effect element has a quadrangular planar shape,
the magneto-resistance effect element has a first side dimension in the first direction and a thickness in a third direction orthogonal to the surface of the substrate, and
the magneto-resistance effect element further includes:
a third magnetic layer, and
a metal layer between the second magnetic layer and the third magnetic layer.
18. The memory device according to claim 17 , wherein the first side dimension is in a range of 5 nm to 40 nm.
19. The memory device according to claim 17 , wherein the magneto-resistance effect element is a square pillar shape.