Semiconductor device, substrate for semiconductor device and method of manufacturing the semiconductor device

1. A semiconductor device, comprising:

a device layer including a semiconductor element and a wiring layer;

a first structure comprising a first substrate having the device layer formed on a first surface thereof, and a through hole formed through a second surface thereof that is opposite to the first surface to reach the device layer, and an inner portion of a second substrate facing the first surface and bonded to the first surface by a first adhesive layer;

a second structure at an outer periphery of the first structure, having a thickness smaller than that of the first structure and having two surfaces on opposite sides thereof, the two surfaces including a substantially flat surface and another surface that is farther from the device layer than the substantially flat surface;

a conductive layer that physically contacts the first structure and the flat surface of the second structure; and

an insulating film pattern formed on the conductive layer covering the first structure and on the conductive layer covering the second structure.

2. The semiconductor device according to claim 1 ,

wherein the second structure includes an outer portion of the second substrate, that is thinner than the inner portion of the second substrate.

3. The semiconductor device according to claim 2 ,

wherein the insulating film pattern formed on the conductive layer covering the second structure is a contact portion of a seal member of a substrate holding portion of a plating apparatus which has an electrode that is covered by the seal member, and the conductive layer physically contacting the flat surface of the second structure is a contact portion of the electrode.

4. The semiconductor device according to claim 1 ,

wherein the second structure includes an outer portion of the second substrate, that has substantially the same thickness as the inner portion of the second substrate, and a second adhesive layer on the outer portion of the second substrate, that is thinner than the first adhesive layer.

5. The semiconductor device according to claim 4 ,

wherein the insulating film pattern formed on the conductive layer covering the second structure is a contact portion of a seal member of a substrate holding portion of a plating apparatus which has an electrode that is covered by the seal member, and the conductive layer physically contacting the flat surface of the second structure is a contact portion of the electrode.

6. The semiconductor device according to claim 1 ,

wherein the insulating film pattern is a contact portion of a seal member of a substrate holding portion of a plating apparatus which has an electrode that is covered by the seal member, and the conductive layer physically contacting the flat surface of the second structure is a contact portion of the electrode.

7. The semiconductor device according to claim 1 ,

wherein a thickness of the first substrate is less than 30 μm.

8. A substrate for a semiconductor device, comprising:

a first substrate having a device layer formed on a first surface thereof, and a through hole formed through a second surface thereof that is opposite to the first surface to reach the device layer;

a second substrate having an inner portion facing the first surface and bonded to the first surface by an adhesive layer, and an outer portion that does not face the first surface; and

a conductive layer covering the second surface, the through hole, and the outer portion of the second substrate,

wherein the outer portion of the second substrate is thinner than the inner portion of the second substrate.

9. The semiconductor device according to claim 8 , further comprising:

an insulating film pattern formed on the conductive layer covering the second surface and partially on the conductive layer covering the outer portion of the second substrate,

wherein the insulating film pattern formed partially on the conductive layer covering the outer portion of the second substrate is a contact portion of a seal member of a substrate holding portion of a plating apparatus which has an electrode that is covered by the seal member, and the conductive layer covering the outer portion of the second substrate and on which the insulating film pattern is not formed, is a contact portion of the electrode.

10. The substrate for the semiconductor device according to claim 8 , further comprising:

an insulating film pattern formed on the conductive layer covering the second surface;

wherein the insulating film pattern is a contact portion of a seal member of a substrate holding portion of a plating apparatus which has an electrode that is covered by the seal member, and the conductive layer covering the outer portion of the second substrate is a contact portion of the electrode.

11. The substrate for the semiconductor device according to claim 8 ,

wherein a thickness of the first substrate is less than 30 μm.

12. A method of manufacturing a semiconductor device, comprising:

forming a device layer including a semiconductor element and a wiring layer on a first surface of a first substrate;

forming a stacked structure by bonding a second substrate to the first surface of the first substrate with an adhesive layer;

polishing the first substrate from a second surface thereof that is opposite to the first surface;

forming a through hole through the second surface of the first substrate until the device layer is exposed;

removing the first substrate at an outer periphery of the stacked structure;

forming a conductive layer to cover the second surface of the first substrate, the through hole, and the outer periphery of the stacked structure;

forming an insulation pattern partially on the conductive layer; and

filling the through hole covered by the conductive layer with metal to form a connection electrode for the device layer.

13. The method according to claim 12 , further comprising:

pressing an electrode of a plating apparatus directly against the conductive layer formed on the outer periphery of the stacked structure; and

applying a voltage to the electrode of the plating apparatus while contacting the through hole with a plating solution to fill the through hole with the metal.

14. The method according to claim 13 , further comprising:

while pressing the electrode of the plating apparatus directly against the conductive layer formed on the outer periphery of the stacked structure, pressing a seal member that covers the electrode of the plating apparatus against the insulation pattern formed on the conductive layer covering the second surface of the first substrate.

15. The method according to claim 12 , further comprising:

removing all of the adhesive layer at the outer periphery of the stacked structure and part of the second substrate at the outer periphery of the stacked structure, after the first substrate is removed from the outer periphery of the stacked structure.

16. The method according to claim 13 , further comprising:

while pressing the electrode of the plating apparatus directly against the conductive layer formed on the outer periphery of the stacked structure, pressing a seal member that covers the electrode of the plating apparatus against the insulation pattern formed on the outer periphery of the stacked structure.

17. The method according to claim 12 , further comprising:

removing a part of the adhesive layer at the outer periphery of the stacked structure, after the first substrate is removed from the outer periphery of the stacked structure.

18. The method according to claim 13 , further comprising:

while pressing the electrode of the plating apparatus directly against the conductive layer formed on the outer periphery of the stacked structure, pressing a seal member that covers the electrode of the plating apparatus against the insulation pattern formed on the outer periphery of the stacked structure.

19. The method according to claim 12 ,

wherein a thickness of the first substrate is less than 30 μm.