Magnetic storage device
A magnetic storage device includes a first and a second stacked body including a first ferromagnetic body and a second ferromagnetic body, respectively. A first magnetoresistive effect element includes the first ferromagnetic body and a third ferromagnetic body with a first nonmagnetic body between the first and third ferromagnetic bodies. A second magnetoresistive effect element includes the first ferromagnetic body and a fourth ferromagnetic body with a second nonmagnetic body between the first and fourth ferromagnetic bodies. A third magnetoresistive effect element includes the second ferromagnetic body and a fifth ferromagnetic body with a third nonmagnetic body between the second and fifth ferromagnetic bodies. A fourth magnetoresistive effect element includes the second ferromagnetic body and a sixth ferromagnetic body with a fourth nonmagnetic body between the second and sixth ferromagnetic bodies. The third and fourth ferromagnetic bodies are between the first and second stacked bodies.
1. A magnetic storage device, comprising:
a first stacked body extending in a first direction and including a first ferromagnetic body;
a second stacked body extending in a second direction and including a second ferromagnetic body;
a first magnetoresistive effect element that comprises the first ferromagnetic body, a third ferromagnetic body, and a first nonmagnetic body between the first ferromagnetic body and the third ferromagnetic body;
a second magnetoresistive effect element spaced from the first magnetoresistive effect element in the first direction and comprises the first ferromagnetic body, a fourth ferromagnetic body, and a second nonmagnetic body between the first ferromagnetic body and the fourth ferromagnetic body;
a third magnetoresistive effect element that comprises the second ferromagnetic body, a fifth ferromagnetic body, and a third nonmagnetic body between the second ferromagnetic body and the fifth ferromagnetic body; and
a fourth magnetoresistive effect element spaced from the third magnetoresistive effect element in the second direction and comprises the second ferromagnetic body, a sixth ferromagnetic body, and a fourth nonmagnetic body between the second ferromagnetic body and the sixth ferromagnetic body, wherein
the third ferromagnetic body and the fourth ferromagnetic body are between the first stacked body and the second stacked body in a stacking direction of the first stacked body and the second stacked body, and
the second stacked body is between the third ferromagnetic body and the fourth ferromagnetic body, and between the fifth ferromagnetic body and the sixth ferromagnetic body in the stacking direction of the first stacked body and the second stacked body.
2. The magnetic storage device according to claim 1 , wherein
the first stacked body further includes a seventh ferromagnetic body and a fifth nonmagnetic body that is between the first ferromagnetic body and the seventh ferromagnetic body, and
the second stacked body further includes an eighth ferromagnetic body and a sixth nonmagnetic body that is between the second ferromagnetic body and the eighth ferromagnetic body.
3. The magnetic storage device according to claim 2 , wherein
the first magnetoresistive effect element includes a first portion of the first stacked body,
the second magnetoresistive effect element includes a second portion of the first stacked body,
the third magnetoresistive effect element includes a first portion of the second stacked body, and
the fourth magnetoresistive effect element includes a second portion of the second stacked body.
4. The magnetic storage device according to claim 2 , wherein
the seventh ferromagnetic body is opposite the third ferromagnetic body and the fourth ferromagnetic body with the first ferromagnetic body therebetween,
the eighth ferromagnetic body is opposite the fifth ferromagnetic body and the sixth ferromagnetic body with the second ferromagnetic body therebetween,
the first ferromagnetic body has a thickness in the stacking direction less than the seventh ferromagnetic body, and
the second ferromagnetic body has a thickness in the stacking direction less than the eighth ferromagnetic body.
5. The magnetic storage device according to claim 1 , wherein the first stacked body and the second stacked body are connected via the third ferromagnetic body without the fourth ferromagnetic body, the fifth ferromagnetic body, and the sixth ferromagnetic body being in the connection therebetween.
6. The magnetic storage device according to claim 1 , wherein the first direction and the second direction are different directions from each other.
7. A magnetic storage device, comprising:
a stacked body that includes a first ferromagnetic body and a second ferromagnetic body;
a first magnetoresistive effect element that comprises the first ferromagnetic body, a third ferromagnetic body, and a first nonmagnetic body between the first ferromagnetic body and the third ferromagnetic body;
a second magnetoresistive effect element that comprises the first ferromagnetic body, a fourth ferromagnetic body, and a second nonmagnetic body between the first ferromagnetic body and the fourth ferromagnetic body;
a third magnetoresistive effect element that comprises the second ferromagnetic body, a fifth ferromagnetic body, and a third nonmagnetic body between the second ferromagnetic body and the fifth ferromagnetic body; and
a fourth magnetoresistive effect element that comprises the second ferromagnetic body, a sixth ferromagnetic body, and a fourth nonmagnetic body between the second ferromagnetic body and the sixth ferromagnetic body, wherein
the stacked body is between the third ferromagnetic body and the fourth ferromagnetic body in a stacking direction of the stacked body, and
the stacked body is between the fifth ferromagnetic body and the sixth ferromagnetic body in the stacking direction.
8. The magnetic storage device according to claim 7 , wherein the stacked body further includes a fifth nonmagnetic body between the first ferromagnetic body and the second ferromagnetic body.
9. The magnetic storage device according to claim 8 , wherein
the first magnetoresistive effect element and the third magnetoresistive effect element each include a first portion of the stacked body, and
the second magnetoresistive effect element and the fourth magnetoresistive effect element each include a second portion of the stacked body.
10. The magnetic storage device according to claim 8 , wherein the first ferromagnetic body has a thickness in the stacking direction equal to the second ferromagnetic body.
11. The magnetic storage device according to claim 8 , wherein the first ferromagnetic body and the second ferromagnetic body are symmetrical about the fifth nonmagnetic body.
12. The magnetic storage device according to claim 8 , wherein the fifth nonmagnetic body comprises at least one of ruthenium and iridium.
13. The magnetic storage device according to claim 7 , wherein the stacked body further includes:
a seventh ferromagnetic body;
a fifth nonmagnetic body between the first ferromagnetic body and the seventh ferromagnetic body;
an eighth ferromagnetic body;
a sixth nonmagnetic body between the second ferromagnetic body and the eighth ferromagnetic body; and
a conductor between the first ferromagnetic body and the seventh ferromagnetic body in the stacking direction.
14. The magnetic storage device according to claim 13 , wherein
the first magnetoresistive effect element comprises first portions of the first ferromagnetic body, the seventh ferromagnetic body, and the fifth nonmagnetic body,
the second magnetoresistive effect element comprises second portions of the first ferromagnetic body, the seventh ferromagnetic body, and the fifth nonmagnetic body,
the third magnetoresistive effect element comprises first portions of the second ferromagnetic body, the eighth ferromagnetic body, and the sixth nonmagnetic body, and
the fourth magnetoresistive effect element comprises second portions of the second ferromagnetic body, the eighth ferromagnetic body, and the sixth nonmagnetic body.
15. The magnetic storage device according to claim 13 , wherein
the seventh ferromagnetic body is opposite the third ferromagnetic body and the fourth ferromagnetic body the first ferromagnetic body therebetween,
the eighth ferromagnetic body is opposite the fifth ferromagnetic body and the sixth ferromagnetic body with the second ferromagnetic body therebetween,
the first ferromagnetic body has a thickness in the stacking direction less than the seventh ferromagnetic body, and
the second ferromagnetic body has a thickness in the stacking direction less than the eighth ferromagnetic body.
16. The magnetic storage device according to claim 13 , wherein the conductor comprises copper or aluminum.
17. The magnetic storage device according to claim 13 , wherein the fifth nonmagnetic body and the sixth nonmagnetic body each comprise at least one of ruthenium and iridium.
18. The magnetic storage device according to claim 7 , wherein the first nonmagnetic body, the second nonmagnetic body, the third nonmagnetic body, and the fourth nonmagnetic body comprise magnesium oxide.
19. The magnetic storage device according to claim 7 , further comprising:
a first switching element connected in series with the first magnetoresistive effect element;
a second switching element connected in series with the second magnetoresistive effect element;
a third switching element connected in series with the third magnetoresistive effect element; and
a fourth switching element connected in series with the fourth magnetoresistive effect element.
20. The magnetic storage device according to claim 19 , wherein the first switching element, the second switching element, the third switching element, and the fourth switching element are each a two-terminal switch.