IP Library Granted Patent US 11,342,182
Granted Patent B2
US 11,342,182 · App. 16/559,518 · Granted May 24, 2022

Substrate treatment device, substrate treatment method, and semiconductor device manufacturing method

Inventors: Yasuhito Yoshimizu (Yokkaichi Mie, JP); Fuyuma Ito (Yokkaichi Mie, JP); Hakuba Kitagawa (Yokkaichi Mie, JP); Yohei Yamamoto (Yokkaichi Mie, JP); Hisashi Okuchi (Yokkaichi Mie, JP); Yuji Yamada (Kuwana Mie, JP)
Assignee: KIOXIA CORPORATION
H01L21/02672B05C11/08B08B3/08H01L21/6715H01L27/11556H01L27/11582
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Quick Facts
Patent No.
US 11,342,182
App. No.
16/559,518
Granted
May 24, 2022
Kind
B2
Abstract

According to an embodiment, the substrate treatment device includes a dilutor configured to dilute a first liquid containing a metal ion and exhibiting acidity. The device further includes a pH changer configured to change a pH of the first liquid before or after being diluted by the dilutor. The device further includes a substrate conditioner configured to treat the substrate using the first liquid, which is diluted by the dilutor and with the pH changed by the pH changer.

Claims (28)

1. A substrate treatment device, comprising:

a dilutor configured to dilute a first liquid containing a metal ion and exhibiting acidity;

a pH changer configured to change a potential Hydrogen (pH) of the diluted first liquid to provide a plurality of metal hydroxides from the metal ion;

a first branch flow path provided between the dilutor and the pH changer; and

a second branch flow path configured to discharge the diluted first liquid from the dilutor; and

a substrate conditioner configured to treat a substrate using the metal hydroxides.

2. The substrate treatment device according to claim 1 , wherein

the pH changer is further configured to remove a first subset of the plurality of metal hydroxides with a particle size outside a predetermined range from the diluted first liquid, and leave a second subset of the plurality of metal hydroxides with a particle size within the predetermined range in the diluted first liquid, and

the substrate conditioner is further configured to treat the substrate with the diluted first liquid containing the second subset of metal hydroxides.

3. The substrate treatment device according to claim 2 , wherein

the pH changer is further configured to, by filtering the diluted first liquid, remove the first subset of metal hydroxides, and leave the second subset of metal hydroxides.

4. The substrate treatment device according to claim 2 , wherein

the pH changer is further configured to, by treating the diluted first liquid with an ion exchange membrane, change the pH of the diluted first liquid, remove the second subset of metal hydroxides, and leave the first subset of metal hydroxides.

5. The substrate treatment device according to claim 4 , wherein

the pH changer includes a recovery component that is configured to supply an acid or an alkali to the ion exchange membrane to recover an ion exchange group of the ion exchange membrane.

6. The substrate treatment device according to claim 2 , wherein

the pH changer is further configured to, by heating the diluted first liquid to cause thermoelectric convection in the diluted first liquid, change the pH of the diluted first liquid, remove the second subset of metal hydroxides, and leave the first subset of metal hydroxides.

7. The substrate treatment device according to claim 1 , wherein

the pH changer is further configured to change the pH of the diluted first liquid by mixing the diluted first liquid with a second liquid that exhibits alkalinity or acidity.

8. The substrate treatment device according to claim 1 , wherein the substrate conditioner includes a discharging branch flow path downstream of the pH changer and configured to provide the diluted first liquid to the substrate,

wherein a third branch flow path is provided between the pH changer and the discharging branch flow path, the third branch flow path configured to discharge a liquid from the pH changer.

9. The substrate treatment device according to claim 1 , wherein the substrate conditioner comprises:

a table configured to rotate the substrate, and

a first nozzle configured to supply alkali to the substrate.

10. The substrate treatment device according to claim 9 , wherein the substrate conditioner further comprises:

a second nozzle configured to supply water to the substrate.

11. The substrate treatment device according to claim 10 , wherein the substrate conditioner further comprises:

a third nozzle configured to provide the diluted first liquid to the substrate.

Assignments (2)
CHANGE OF NAME Recorded Jan 17, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058751/0379 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 3, 2020
From: YOSHIMIZU, YASUHITO; ITO, FUYUMA; KITAGAWA, HAKUBA; YAMAMOTO, YOHEI; OKUCHI, HISASHI; YAMADA, YUJI
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 051703/0677 →
Priority Claims (1)
JP JP2018-231736 · Dec 11, 2018 · national
Continuity (1)
Related Publication 20200185221A1 · Jun 11, 2020