Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes a semiconductor wafer chip, a semiconductor device layer, and a reflectance reducing layer. The semiconductor wafer chip includes a device region and a peripheral region around the device region. The peripheral region includes a plurality of voids aligned along a side surface of the semiconductor wafer chip at a predetermined depth from a first surface of the semiconductor wafer chip. The semiconductor device element layer is on the first surface in the device region. The reflectance reducing layer is on the first surface of the semiconductor wafer chip in the peripheral region, that reduces a reflection of laser light incident from a second surface of the semiconductor wafer chip.
1. A semiconductor device, comprising:
a semiconductor wafer chip including a device region and a peripheral region around the device region, the peripheral region including a plurality of voids aligned along a side surface of the semiconductor wafer chip at a predetermined depth from a first surface of the semiconductor wafer chip;
a semiconductor device layer on the first surface of the semiconductor wafer chip in the device region, the semiconductor device layer including a portion of a transistor; and
a multi-layer anti-reflection layer on the first surface of the semiconductor wafer chip in the peripheral region that reduces a reflection of laser light incident from a second surface of the semiconductor wafer chip opposite to the first surface, wherein the multi-layer anti-reflection layer includes an insulating layer provided on the first surface of the semiconductor wafer chip and a semiconductor layer provided on the insulating layer, the semiconductor layer being a same material, and having a same thickness, as a gate electrode layer of the transistor.
2. The semiconductor device according to claim 1 , wherein a reflectance of the laser light incident from the second surface of the semiconductor wafer chip is equal to or less than 17%.
3. The semiconductor device according to claim 1 , wherein a maximum roughness depth of a surface of the multi-layer anti-reflection layer opposite to a surface of the multi-layer anti-reflection layer facing the semiconductor wafer chip is less than 1.4 μm.
4. The semiconductor device according to claim 1 , wherein the insulating layer of the multi-layer anti-reflection layer is formed of a same material as a gate insulating layer of the semiconductor device layer.
5. The semiconductor device according to claim 1 , wherein a thickness of the semiconductor wafer chip is less than 30 μm.
6. The semiconductor device according to claim 1 , further comprising:
a metal layer on a surface of the multi-layer anti-reflection layer opposite to a surface of the multi-layer anti-reflection layer facing the semiconductor wafer chip.
7. The semiconductor device according to claim 1 , wherein the predetermined depth is less than 6 μm.
8. The semiconductor device according to claim 1 , wherein the insulating layer has a same thickness as a gate insulating layer of the transistor.
9. A semiconductor device, comprising:
a semiconductor wafer chip including a device region and a peripheral region around the device region, the peripheral region including a plurality of voids aligned along a side surface of the semiconductor wafer chip at a predetermined depth from a first surface of the semiconductor wafer chip;
a semiconductor device layer on the first surface of the semiconductor wafer chip in the device region, the semiconductor device layer including a portion of a transistor; and
a multi-layer anti-reflection layer on the first surface of the semiconductor wafer chip in the peripheral region that reduces a reflection of laser light incident from a second surface of the semiconductor wafer chip opposite to the first surface, wherein the multi-layer anti-reflection layer includes an insulating layer provided on the first surface of the semiconductor wafer chip and a semiconductor layer provided on the insulating layer, the insulating layer having a same thickness as a gate insulating layer between a gate electrode layer of the transistor and the first surface of the semiconductor wafer chip.
10. The semiconductor device according to claim 9 , wherein a reflectance of the laser light incident from the second surface of the semiconductor wafer chip is equal to or less than 17%.
11. The semiconductor device according to claim 9 , wherein a maximum roughness depth of a surface of the multi-layer anti-reflection layer opposite to a surface of the multi-layer anti-reflection layer facing the semiconductor wafer chip is less than 1.4 μm.
12. The semiconductor device according to claim 9 , wherein at least one layer of the multi-layer anti-reflection layer is formed of a same material as in the semiconductor device layer.
13. The semiconductor device according to claim 9 , wherein a thickness of the semiconductor wafer chip is less than 30 μm.
14. The semiconductor device according to claim 9 , further comprising:
a metal layer on a surface of the multi-layer anti-reflection layer opposite to a surface of the multi-layer anti-reflection layer facing the semiconductor wafer chip.
15. The semiconductor device according to claim 9 , wherein the predetermined depth is less than 6 μm.