Semiconductor storage device and method for manufacturing semiconductor storage device

1. A semiconductor storage device comprising:

a cell array region having a plurality of memory cells;

an outer edge portion arranged at an end portion to surround the cell array region; and

a stacked body in which a plurality of conductive layers are stacked via a first insulating layer and which has a stair portion in which end portions of the plurality of conductive layers form a stair shape is provided inside the cell array region, the stair portion facing the outer edge portion, and

wherein a center of at least one step of the stair portion has a recess directed toward an inner side of the cell array region.

2. The semiconductor storage device according to claim 1 , wherein

the stair portion has a region including a plurality of steps which are stepped up toward the inner side of the cell array region, and

a recess of each of the steps becomes smaller as a step is located on an upper side inside the region.

3. The semiconductor storage device according to claim 2 , wherein

the stair portion has a plurality of the regions in which the recess of each of the steps becomes smaller as a step is located on an upper side, and

the recess of each of the steps becomes smaller as a region is located on an upper side.

4. The semiconductor storage device according to claim 1 , further comprising

a plurality of contacts aligned side by side along a direction in which terrace portions of the respective steps extend are each arranged on each of the steps of the stair portion.

5. The semiconductor storage device according to claim 4 , wherein

the stacked body has a plurality of strip portions that extend in an elevating direction of the stair portion and divide the stacked body, and

the one of the plurality of the contacts is arranged in each divided region of the stacked body.

6. The semiconductor storage device according to claim 1 , further comprising

a dummy stacked body in which a plurality of second insulating layers are stacked via a third insulating layer having an identical composition as the first insulating layer, in an end portion of the outer edge portion on a side facing the stair portion, the end portion being a position opposing a region where at least two directions of the cell array region are surrounded by the outer edge portion.

7. The semiconductor storage device according to claim 6 , wherein

the dummy stacked body has a dummy stair portion which opposes the stair portion of the stacked body and is stepped up in a direction away from the stacked body.

8. The semiconductor storage device according to claim 6 , wherein

the stair portion has a region including a plurality of steps, and

a recess of each of the steps becomes smaller as a step is farther from the dummy stacked body inside the region.

9. The semiconductor storage device according to claim 8 , wherein

the stair portion has a plurality of the regions in which the recess of each of the steps becomes smaller as a step is farther from the dummy stacked body, and

the recess of each of the steps becomes smaller as a region is farther from the dummy stacked body.

10. The semiconductor storage device according to claim 1 , further comprising

a plurality of pillars which extend in a stacking direction of the stacked body inside the stacked body and form the plurality of memory cells at respective intersections with the plurality of conductive layers.