Semiconductor device and method of manufacturing the same
In one embodiment, a semiconductor device includes a first chip that includes a first interconnect layer, a first insulator provided on the first interconnect layer, a first metal portion provided on the first interconnect layer and provided in the first insulator and including at least one of palladium, platinum and gold, and a second interconnect layer provided on the first metal portion and provided in the first insulator. The device further includes a second chip that includes a second insulator provided on the first insulator, and a third interconnect layer provided in the second insulator and provided on the second interconnect layer.
1. A semiconductor device comprising:
a first chip that includes a first interconnect layer, a first insulator provided on the first interconnect layer, a first metal portion provided on the first interconnect layer and provided in the first insulator and including at least one of palladium, platinum and gold, and a second interconnect layer provided on the first metal portion and provided in the first insulator, and
a second chip that includes a second insulator provided on the first insulator, and a third interconnect layer provided in the second insulator and provided on the second interconnect layer,
wherein the first metal portion is provided between a lower face of the second interconnect layer and an upper face of the first interconnect layer, is not provided between the first insulator and the upper face of the first interconnect layer, and is in contact with the upper face of the first interconnect layer.
2. The device of claim 1 , wherein the second chip further includes a second metal portion provided on the third interconnect layer and provided in the second insulator and including at least one of palladium, platinum and gold, and a fourth interconnect layer provided on the second metal portion.
3. The device of claim 1 , wherein the first interconnect layer includes at least tungsten or aluminum, and the second interconnect layer includes at least copper.
4. The device of claim 3 , wherein the second interconnect layer further includes at least one of nickel and manganese.
5. The device of claim 1 , wherein the second interconnect layer includes:
a first region provided on the first interconnect layer via the first metal portion; and
a second region provided on the first interconnect layer via the first metal portion and the first region, and provided on the first interconnect layer via the first insulator.
6. The device of claim 1 , wherein the second interconnect layer includes:
a first film provided on a side face of the first insulator; and
a second film provided in the first insulator via the first film, and provided on the first interconnect layer via the first metal portion.
7. The device of claim 6 , wherein the first film includes at least titanium, tantalum or manganese.
8. The device of claim 6 , wherein the second film includes at least copper.
9. The device of claim 6 , wherein the second film includes a metallic element that is different from a metallic element included in the first interconnect layer.
10. The device of claim 6 , wherein the second film is in contact with the first metal portion.
11. A semiconductor device comprising:
a first chip that includes a first interconnect layer, a first insulator provided on the first interconnect layer, a second insulator provided on the first insulator, a third insulator provided on the second insulator, a first metal portion provided on the first interconnect layer and provided in the first insulator and including at least one of palladium, platinum and gold, and a second interconnect layer provided on the first metal portion and provided in the first, second and third insulators, and
a second chip that includes a fourth insulator provided on the third insulator, and a third interconnect layer provided in the fourth insulator and provided on the second interconnect layer,
wherein the first metal portion is provided between a lower face of the second interconnect layer and an upper face of the first interconnect layer, is not provided between the first insulator and the upper face of the first interconnect layer, and is in contact with the upper face of the first interconnect layer, and
wherein the second interconnect layer includes:
a first film provided on a side face of the first insulator;
a second film provided on a side face of the third insulator; and
a third film provided in the first insulator via the first film, provided on an upper face of the second insulator, provided in the third insulator via the second film, and provided on the first interconnect layer via the first metal portion.
12. The device of claim 1 , wherein the first metal portion is in contact with the lower face of the second interconnect layer.
13. The device of claim 11 , wherein the first metal portion is in contact with the lower face of the second interconnect layer.