Semiconductor device and method of manufacturing thereof

1. An electronic device comprising:

a signal distribution structure (SDS) comprising a top SDS side, a bottom SDS side, and a plurality of lateral SDS sides, wherein:

the SDS comprises an SDS conductive layer and an SDS dielectric layer; and

no conductive material is exposed at the lateral SDS sides;

a first electronic component coupled to the top SDS side and comprising a first interconnect in direct contact with a first portion of the SDS conductive layer;

a second electronic component coupled to the top SDS side and comprising a second interconnect in direct contact with a second portion of the SDS conductive layer;

a conductive shielding member (CSM) comprising a bottom CSM side coupled to the top SDS side, a top CSM side, and a lateral CSM side, where the conductive shielding member is positioned directly between the first and second electronic components;

an encapsulating material that covers at least a portion of the top SDS side, at least a portion of a lateral side of the first electronic component, at least a portion of a lateral side of the and second electronic component, and at least a portion of the lateral CSM side; and

an electromagnetic interference (EMI) shield layer on a top side of the encapsulating material, on the top CSM side, and on the lateral SDS sides, wherein the EMI shield layer is electrically coupled to the top CSM side.

2. The electronic device of claim 1 , wherein no portion of the encapsulating material is vertically lower than a lowermost end of the first interconnect.

3. The electronic device of claim 1 , wherein:

the conductive shielding member (CSM) comprises a CSM seed layer and a CSM conductive layer plated directly on the CSM seed layer; and

the CSM seed layer comprises an etched lateral side.

4. The electronic device of claim 1 , wherein no portion of the EMI shield layer is directly between the signal distribution structure and the encapsulating material.

5. The electronic device of claim 1 , wherein the encapsulating material comprises a molded material that is molded around the conductive shielding member, and laterally surrounds an entirety of the conductive shielding member.

6. The electronic device of claim 1 , wherein

the conductive shielding member extends laterally entirely between two adjacent lateral SDS sides of the lateral SDS sides.

7. The electronic device of claim 1 , wherein

the conductive shielding member is one of a plurality of conductive shielding members that form a shielding pattern that extends laterally between two adjacent lateral sides of the lateral SDS sides.

8. The electronic device of claim 1 , wherein the first interconnect is positioned at a bottom side of the first electronic component and does not protrude from the bottom side of the first electronic component.

9. An electronic device comprising:

a signal distribution structure (SDS) comprising a top SDS side and a bottom SDS side, and an SDS conductive layer;

a first electronic component coupled to the top SDS side and comprising a first interconnect coupled to the SDS conductive layer, the first interconnect positioned on a bottom side of the first electronic component;

a second electronic component coupled to the top SDS side and comprising a second interconnect coupled to the SDS conductive layer, the second interconnect positioned on a bottom side of the second electronic component;

a conductive shielding member (CSM) coupled to the top SDS side and positioned directly between the first and second electronic components, wherein the conductive shielding member (CSM) comprises:

a CSM seed layer coupled directly to the top SDS side; and

a CSM conductive layer coupled to a top side of the CSM seed layer and covering an entirety of the top side of the CSM seed layer;

an encapsulating material that covers at least a portion of the top SDS side, at least a portion of a lateral side of the first electronic component, at least a portion of a lateral side of the second electronic component, and at least a portion of a lateral side of the conductive shielding member, wherein the encapsulating material laterally surrounds the CSM seed layer; and

an electromagnetic interference (EMI) shield layer on a top side of the encapsulating material and on a top side of the conductive shielding member, wherein the EMI shield layer is electrically coupled to the top side of the conductive shielding member.

10. The electronic device of claim 9 , wherein the CSM seed layer comprises an etched lateral surface.

11. The electronic device of claim 10 , wherein the etched lateral surface of the CSM seed layer bounds an undercut directly below the conductive shielding member.

12. The electronic device of claim 9 , wherein the encapsulating material comprises a molded material that is molded laterally around an entirety of the conductive shielding member.

13. The electronic device of claim 9 , wherein the top side of the conductive shielding member is coplanar with the top side of the encapsulating material.

14. The electronic device of claim 9 , wherein:

the signal distribution structure (SDS) comprises a plurality of lateral SDS sides that extend between the top SDS side and the bottom SDS side; and

the conductive shielding member is one of a plurality of conductive shielding members that form a shielding pattern that extends laterally between two adjacent lateral sides of the lateral SDS sides.

15. An electronic device comprising:

a signal distribution structure (SDS) comprising a top SDS side and a bottom SDS side, and an SDS conductive layer;

a first electronic component coupled to the top SDS side and comprising a first interconnect coupled to the SDS conductive layer;

a second electronic component coupled to the top SDS side and comprising a second interconnect coupled to the SDS conductive layer;

a conductive shielding member (CSM) coupled to the top SDS side and positioned directly between the first and second electronic components, where the conductive shielding member (CSM) comprises:

a bottom CSM side that is coupled to the top SDS side by a solderless and adhesiveless connection; and

a top CSM side;

an encapsulating material that covers at least a portion of the top SDS side, at least a portion of a lateral side of the first electronic component, at least a portion of a lateral side of the second electronic component, and at least a portion of a lateral side of the conductive shielding member; and

an electromagnetic interference (EMI) shield layer on a top side of the encapsulating material and on a top side of the conductive shielding member, wherein the EMI shield layer comprises a bottom side that is coupled to the top CSM side.

16. The electronic device of claim 15 , wherein:

the conductive shielding member (CSM) comprises a CSM seed layer; and

the signal distribution structure (SDS) comprises an SDS dielectric layer that is deposited directly on the first interconnect, directly on the second interconnect, and directly on the CSM seed layer.

17. The electronic device of claim 15 , wherein no portion of the encapsulating material is vertically lower than a lowermost end of the first interconnect.

18. The electronic device of claim 15 , wherein the conductive shielding member (CSM) comprises a plurality of metal layers laterally surrounded by the encapsulating material.

19. The electronic device of claim 15 , wherein:

the signal distribution structure (SDS) comprises a lateral SDS side at which no conductive material is exposed; and

the EMI shield layer contacts the lateral SDS side.

20. The electronic device of claim 15 , wherein:

the signal distribution structure (SDS) comprises a plurality of lateral SDS sides that extend between the top SDS side and the bottom SDS side; and

the conductive shielding member is one of a plurality of conductive shielding members that form a shielding pattern that extends laterally between two adjacent lateral sides of the lateral SDS sides.