Method of manufacturing a light emitting device
A Light Emitting Device (LED) that has increased reliability and efficiency. Specifically, the LED may be formed using Atomic Layer Deposition to improve the thermal conductivity between the ceramic plate and the LED, decrease the amount of organic contamination, and increase the efficiency of the optical output of the LED.
1. A light emitting device comprising:
a ceramic phosphor plate comprising a light input surface and an oppositely positioned light output surface;
a light emitting diode comprising a light output surface oriented parallel to and adjacent to the ceramic phosphor plate light input surface; and
a layer of transparent dielectric material having a thermal conductivity of greater than or equal to about 3 W/mK bonding the ceramic phosphor plate light input surface directly to the light emitting diode light output surface, the transparent dielectric material having a refractive index matching a refractive index of the light emitting diode light output surface.
2. The light emitting device of claim 1 , not comprising any organic material disposed between the ceramic phosphor plate light input surface and the light emitting diode light output surface.
3. The light emitting device of claim 1 , wherein the transparent dielectric material is selected from the group consisting of Al 2 O 3 , Nb 2 O 5 , and ZrO 2 .
4. The light emitting device of claim 1 , wherein the layer of transparent dielectric material contacts all of the ceramic phosphor plate light input surface and all of the light emitting diode light output surface.
5. The light emitting device of claim 1 , wherein the transparent dielectric material is formed by atomic layer deposition.
6. The light emitting device of claim 1 , wherein the layer of transparent material has a smaller surface area than a total surface area of the light input surface of the ceramic phosphor plate.
7. The light emitting device of claim 1 , further comprising:
a same material as the transparent dielectric material, the same material on sidewalls of the light emitting diode.
8. The light emitting device of claim 3 , wherein the transparent dielectric material is Al 2 O 3 .
9. The light emitting device of claim 3 , wherein the transparent dielectric material is Nb 2 O 5 .
10. The light emitting device of claim 3 , wherein the transparent dielectric material is ZrO 2 .
11. The light emitting device of claim 1 , wherein the layer of transparent dielectric material has thickness perpendicular to the ceramic phosphor plate light input surface and the light emitting diode light output surface of about 1 micron.
12. The light emitting device of claim 1 , wherein the layer of transparent dielectric material has a same surface area as a total surface area of the light input surface of the ceramic phosphor plate.
13. A light emitting device comprising:
a ceramic phosphor plate comprising a light input surface and an oppositely positioned light output surface;
a light emitting diode comprising a light output surface oriented parallel to and adjacent to the ceramic phosphor plate light input surface; and
a layer of transparent dielectric material having a thermal conductivity of greater than or equal to about 3 W/mK bonding the ceramic phosphor plate light input surface directly to the light emitting diode light output surface, the layer of transparent dielectric material having a thickness perpendicular to the ceramic phosphor plate light input surface and the light emitting diode light output surface of about 1 micron.