Magnetic device and memory device
According to one embodiment, a magnetic device includes: a first magnetic material provided above a substrate; a second magnetic material provided between the substrate and the first magnetic material; a nonmagnetic material provided between the first magnetic material and the second magnetic material; a first layer provided between the substrate and the second magnetic material and including an amorphous layer; and a second layer provided between the amorphous layer and the second magnetic material and including a crystal layer.
1. A magnetic device comprising:
a first magnetic material provided above a substrate;
a second magnetic material provided between the substrate and the first magnetic material;
a nonmagnetic material provided between the first magnetic material and the second magnetic material;
a first layer provided between the substrate and the second magnetic material and including an amorphous layer;
a second layer provided between the amorphous layer and the second magnetic material and including a first crystal layer; and
a third layer provided between the first layer and the second layer and including a second crystal layer having tantalum.
2. The magnetic device according to claim 1 , wherein the second magnetic material includes a first magnetic layer, a second magnetic layer between the first magnetic layer and the second layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer.
3. The magnetic device according to claim 1 , wherein the second magnetic material has an SAF structure.
4. The magnetic device according to claim 1 , wherein the amorphous layer includes a boride layer.
5. The magnetic device according to claim 1 , wherein the first crystal layer includes one of ruthenium, rhodium, palladium, osmium, iridium, and platinum.
6. The magnetic device according to claim 1 , wherein a thickness of the amorphous layer is equal to or thicker than a sum of a thickness of the second layer and a thickness of the crystal third layer.
7. The magnetic device according to claim 1 , wherein a thickness of the second crystal layer is 0.5 nm or more and 2 nm or less.
8. The magnetic device according to claim 1 , wherein a thickness of the first crystal layer is 1 nm or more and 2 nm or less.
9. A memory device comprising:
a memory cell including a magnetic device, the magnetic device including:
a first magnetic material provided above a substrate;
a second magnetic material provided between the substrate and the first magnetic material;
a nonmagnetic material provided between the first magnetic material and the second magnetic material;
a first layer provided between the substrate and the second magnetic material and including an amorphous layer;
a second layer provided between the amorphous layer and the second magnetic material and including a first crystal layer; and
a third layer provided between the first layer and the second layer and including a second crystal layer having tantalum; and
a control circuit configured to control an operation of the memory cell and provided on the substrate.
10. The memory device according to claim 9 , wherein the second magnetic material includes a first magnetic layer, a second magnetic layer between the first magnetic layer and the second layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer.
11. The memory device according to claim 9 , wherein the second magnetic material has an SAF structure.
12. The memory device according to claim 9 , wherein the amorphous layer includes a boride layer.
13. The memory device according to claim 9 , wherein the first crystal layer includes one of ruthenium, rhodium, palladium, osmium, iridium, and platinum.
14. The memory device according to claim 9 , wherein a thickness of the amorphous layer is equal to or thicker than a sum of a thickness of the second layer and a thickness of the third layer.
15. The memory device according to claim 9 , wherein a thickness of the second crystal layer is 0.5 nm or more and 2 nm or less.
16. The memory device according to claim 9 , wherein a thickness of the first crystal layer is 1 nm or more and 2 nm or less.
17. The magnetic device according to claim 1 , wherein:
the amorphous layer comprises boride, and
the first crystal layer comprises one of platinum and ruthenium.
18. The memory device according to claim 9 , wherein:
the amorphous layer comprises boride, and
the first crystal layer comprises one of platinum and ruthenium.