IP Library Granted Patent US 10,879,217
Granted Patent B1
US 10,879,217 · App. 16/567,077 · Granted Dec 29, 2020

Multi-color LED pixel unit and micro-LED display panel

Inventors: Qiming Li (Albuquerque, NM); Qunchao Xu (Shanghai, CN)
Assignee: Jade Bird Display (Shanghai) Limited
H01L25/0753H01L27/156H01L33/387H01L33/62G09G3/32H01L33/385
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Quick Facts
Patent No.
US 10,879,217
App. No.
16/567,077
Granted
Dec 29, 2020
Kind
B1
Abstract

A multi-color light emitting pixel unit includes a first type of light emitting transistor formed on a substrate and including a first segment of a first metal layer and a first segment of a first type of light emitting layer in an order from bottom to top, and a second type of light emitting transistor formed on the substrate and including a second segment of the first metal layer, a second segment of the first type of light emitting layer, a first segment of a second metal layer, a first segment of a second type of light emitting layer in an order from bottom to top, and a first electrical connector connecting the second segment of the first metal layer and the first segment of the second metal layer.

Claims (38)

1. A multi-color light emitting pixel unit, comprising:

a first type of light emitting transistor formed on a substrate and including a first segment of a first metal layer and a first segment of a first type of light emitting layer in an order from bottom to top; and

a second type of light emitting transistor formed on the substrate and including a second segment of the first metal layer, a second segment of the first type of light emitting layer, a first segment of a second metal layer, a first segment of a second type of light emitting layer in an order from bottom to top, and a first electrical connector connecting the second segment of the first metal layer and the first segment of the second metal layer.

2. The multi-color light emitting pixel unit of claim 1 , further comprising:

a top electrode layer formed over the first type of light emitting transistor and the second type of light emitting transistor.

3. The multi-color light emitting pixel unit of claim 2 , further comprising:

a top isolation layer formed between the top electrode layer and the first and second types of light emitting transistors,

wherein the top isolation layer includes openings exposing a portion of the first segment of the first type of light emitting layer and a portion of the first segment of the second type of light emitting layer, and

the top electrode layer contacts the first segment of the first type of light emitting layer and the first segment of the second type of light emitting layer via the openings in the top isolation layer.

4. The multi-color light emitting pixel unit of claim 1 , wherein a size of a light emitting area of the first type of light emitting transistor is different from a size of a light emitting area of the second type of light emitting transistor.

5. The multi-color light emitting pixel unit of claim 1 , wherein the first type of light emitting transistor is a red light emitting transistor, and

a size of a light emitting area of the first type of light emitting transistor is larger than a size of a light emitting area of the second type of light emitting transistor.

6. The multi-color light emitting pixel unit of claim 1 , further comprising:

micro-gap structures in at least one of the first type of light emitting layer and the second type of light emitting layer.

7. The multi-color light emitting pixel unit of claim 1 , further comprising:

micro-gap structures in both of the first type of light emitting layer and the second type of light emitting layer.

8. The multi-color light emitting pixel unit of claim 7 , wherein, in the second type of light emitting transistor, the micro-gap structures in the first segment of the second type of light emitting layer are staggered relative the micro-gap structures in the second segment of the first type of light emitting layer.

9. The multi-color light emitting pixel unit of claim 1 , further comprising:

a third type of light emitting transistor formed on the substrate and including a third segment of the first metal layer, a third segment of the first type of light emitting layer, a second segment of the second metal layer, a second segment of the second type of light emitting layer, a first segment of a third metal layer, and a first segment of a third type of light emitting layer in an order from bottom to top, and a second electrical connector connecting the third segment of the first metal layer, the second segment of the second metal layer, and the first segment of the third metal layer.

10. The multi-color light emitting pixel unit of claim 9 , further comprising:

a top electrode layer formed over the first type of light emitting transistor, the second type of light emitting transistor, and the third type of light emitting transistor.

11. The multi-color light emitting pixel unit of claim 10 , further comprising:

a top isolation layer formed between the top electrode layer and the first, second, and third types of light emitting transistors,

wherein the top isolation layer includes openings exposing a portion of the first segment of the first type of light emitting layer, a portion of the first segment of the second type of light emitting layer, and a portion of the first segment of the third type of light emitting layer, and

the top electrode layer contacts the first segment of the first type of light emitting layer, the first segment of the second type of light emitting layer, and the first segment of the third type of light emitting layer via the openings in the top isolation layer.

12. The multi-color light emitting pixel unit of claim 9 , wherein sizes of light emitting areas of the first type of light emitting transistor, the second type of light emitting transistor, and the third type of light emitting transistor are different from each other.

13. The multi-color light emitting pixel unit of claim 9 , wherein the first type of light emitting transistor is a red light emitting transistor, and

a size of a light emitting area of the first type of light emitting transistor is larger than a size of a light emitting area of the second type of light emitting transistor, and the size of the light emitting area of the second type of light emitting transistor is larger than a size of a light emitting area of the third type of light emitting transistor.

14. The multi-color light emitting pixel unit of claim 9 , further comprising:

micro-gap structures in at least one of the first type of light emitting layer, the second type of light emitting layer, and the third type of light emitting layer.

15. The multi-color light emitting pixel unit of claim 9 , further comprising:

micro-gap structures in all of the first type of light emitting layer, the second type of light emitting layer, and the third type of light emitting layer.

16. The multi-color light emitting pixel unit of claim 15 , wherein,

in the second type of light emitting transistor, the micro-gap structures in the first segment of the second type of light emitting layer are staggered relative to the micro-gap structures in the second segment of the first type of light emitting layer, and

in the third type of light emitting transistor, the micro-gap structures in the first segment of the third type of light emitting layer are staggered relative to the micro-gap structures in the second segment of the second type of light emitting layer, and the micro-gap structures in the second segment of the second type of light emitting layer are staggered relative to the micro-gap structures in the third segment of the first type of light emitting layer.

17. The multi-color light emitting pixel unit of claim 1 , wherein a height of the first type of light emitting transistor is different from a height of the second type of light emitting transistor.

18. The multi-color light emitting pixel unit of claim 1 , wherein a height of the first type of light emitting transistor is different from a height of the second type of light emitting transistor, and the height of the second type of light emitting transistor is different from a height of the third type of light emitting transistor.

19. A micro display panel comprising the multi-color light emitting pixel unit of claim 1 .

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 9, 2026
From: JADE BIRD DISPLAY (SHANGHAI) LIMITED
To: HUE INC.
Reel/Frame 075373/0207 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 24, 2020
From: HONG KONG BEIDA JADE BIRD DISPLAY LIMITED
To: JADE BIRD DISPLAY (SHANGHAI) LIMITED
Reel/Frame 054461/0852 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 11, 2019
From: LI, QIMING; XU, QUNCHAO
To: HONG KONG BEIDA JADE BIRD DISPLAY LIMITED
Reel/Frame 050338/0331 →
Cited By (3)
US 12,260,807 US 12,603,975 US 12,721,237