Semiconductor laser device, semiconductor laser module, and welding laser light source system
A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.
1. A semiconductor laser device that lases in a multiple transverse mode, comprising:
a substrate having a main surface; and
a stacked structure including a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer that are sequentially stacked above the main surface of the substrate,
wherein the second conductivity-side semiconductor layer includes an opening that delimits a current injection region,
a pair of side faces is formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer,
the active layer has a second width greater than a first width of the opening,
the pair of side faces in at least part of the first conductivity-side semiconductor layer is inclined to the main surface of the substrate,
a maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of a normal to the main surface of the substrate, is within the first conductivity-side semiconductor layer,
each of the pair of side faces includes a first side face on a side close to the substrate and a second side face on a side farther away from the substrate,
θ 1 is less than 90 degrees, θ 1 being an angle formed by a direction of a normal to the first side face and the direction of the normal to the main surface of the substrate,
θ 2 is greater than 90 degrees, θ 2 being an angle formed by a direction of a normal to the second side face and the direction of the normal to the main surface of the substrate,
the pair of side faces is covered with a dielectric film, and
the first side face and the second side face are an interface between the dielectric film and the stacked structure.
2. The semiconductor laser device according to claim 1 , wherein θ 2 is greater than or equal to 120° and less than or equal to 150°.
3. The semiconductor laser device according to claim 1 ,
wherein the stacked structure has a narrowest portion in an area ranging from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer that are sandwiched between the pair of side faces, and
the narrowest portion has a width greater than the first width.
4. The semiconductor laser device according to claim 3 , wherein the narrowest portion is within the second conductivity-side semiconductor layer.
5. The semiconductor laser device according to claim 3 ,
wherein the second conductivity-side semiconductor layer includes a second conductivity-side first semiconductor layer, a second conductivity-side second semiconductor layer, and a second conductivity-side contact layer that are provided on the substrate in an order mentioned,
and
the narrowest portion is at an interface between the second conductivity-side second semiconductor layer and the second conductivity-side contact layer or in the second conductivity-side layer.
6. The semiconductor laser device according to claim 1 ,
wherein the first conductivity-side semiconductor layer includes a first conductivity-side first semiconductor layer and a first conductivity-side second semiconductor layer that are provided on the substrate in an order mentioned, and
the following relation is satisfied:
0
°
<
θ
<
90
[
1
°
-
1
π
Arctan
{
4
d
2
X
-
(
N
w
-
W
s
)
}
]
;
-
π
2
<
Arctan
{
4
d
2
X
-
(
N
w
-
W
s
)
}
<
π
2
where θ [°] is an angle formed by one of the pair of side faces and the main surface of the substrate,
d [μm] is a thickness from the active layer to an interface between the first conductivity-side first semiconductor layer and the first conductivity-side second semiconductor layer,
Nw [μm] is a width of the light distribution of the light guided in the stacked structure,
Ws [μm] is a width that is the first width, and
X [μm] is a distance from a side face of the opening to an intersection of the one of the pair of side faces and an interface between the active layer and the first conductivity-side second semiconductor layer.
7. The semiconductor laser device according to claim 1 ,
wherein the first conductivity-side semiconductor layer includes a first conductivity-side first semiconductor layer and a first conductivity-side second semiconductor layer that are provided on the substrate in an order mentioned,
the second conductivity-side semiconductor layer includes a second conductivity-side first semiconductor layer and a second conductivity-side second semiconductor layer that are provided on the substrate in an order mentioned, and
the following relations are satisfied:
n 22 <n 11 <n 12 , and
n 12 ≥n 21
where n 11 , n 12 , n 21 , and n 22 are respectively refractive indices of the first conductivity-side first semiconductor layer, the first conductivity-side second semiconductor layer, the second conductivity-side first semiconductor layer, and the second conductivity-side second semiconductor layer.
8. The semiconductor laser device according to claim 1 ,
wherein the active layer has a quantum well structure that includes one or more quantum well layers, and
a total thickness of the one or more quantum well layers in the active layer is less than or equal to 100 angstroms.
9. The semiconductor laser device according to claim 1 , wherein
the opening includes a plurality of openings, and
each of the plurality of openings is isolated by an isolation groove that spans from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer.
10. The semiconductor laser device according to claim 1 , wherein the first width of the opening is greater than or equal to 50 μm and less than or equal to 300 μm.
11. The semiconductor laser device according to claim 1 , wherein a distribution of the light guided in the stacked structure, in a direction horizontal to the main surface of the substrate, has a width greater than the first width of the opening.
12. A semiconductor laser module, comprising
the semiconductor laser device according to claim 1 .
13. The semiconductor laser module according to claim 12 , comprising
a base on which the semiconductor laser device is arranged,
wherein the stacked structure of the semiconductor laser device is mounted on the base.
14. The semiconductor laser module according to claim 13 , further comprising metal disposed laterally on at least one of the two side faces of the semiconductor laser device.
15. The semiconductor laser module according to claim 14 ,
wherein each of the pair of side faces includes a first side face on a side close to the substrate and a second side face on a side farther away from the substrate,
θ 1 is less than 90 degrees, θ 1 being an angle formed by a direction of a normal to the first side face and the direction of the normal to the main surface of the substrate, and
θ 2 is greater than 90 degrees, θ 2 being an angle formed by a direction of a normal to the second side face and the direction of the normal to the main surface of the substrate.
16. A welding laser light source system comprising
the semiconductor laser device according to claim 1 .
17. The semiconductor laser device according to claim 1 ,
wherein the second conductivity-side semiconductor layer includes a second conductivity-side first semiconductor layer, a second conductivity-side second semiconductor layer, and a second conductivity-side contact layer that are provided on the substrate in an order mentioned, and
the second side face includes a side face of the second conductivity-side contact layer.
18. The semiconductor laser device according to claim 1 , wherein the dielectric film has a constricted structure so as to exhibit an hourglass shape in a cross-sectional view.
19. The semiconductor laser device according to claim 1 , wherein the dielectric film is inclined in a flared mesa shape from the first conductivity-side semiconductor layer through active layer to a narrowest portion, and then is inclined in an inverted flared mesa shape from the narrowest portion to the second conductivity-side semiconductor layer.
20. The semiconductor laser device according to claim 1 , wherein the second conductivity-side semiconductor layer includes a current block layer having the opening.