Semiconductor memory device

1. A semiconductor memory device, comprising:

a memory cell comprising a switching element and a resistance change element; and

a first circuit that applies a first voltage to the memory cell, places the memory cell into an ON state by applying a second voltage to the memory cell while applying the first voltage to the memory cell in parallel, generates a third voltage based on a resistance state of the resistance change element by performing a first voltage application to perform a first readout on the memory cell in the ON state, writes first data into the memory cell, generates a fourth voltage based on a first data resistance state of the resistance change element by performing the first voltage application to perform a second readout on the memory cell in which the first data is written, and determines data stored in the memory cell at a time of the first readout based on the third voltage and the fourth voltage.

2. The semiconductor memory device according to claim 1 , wherein the first circuit generates a first current based on the third voltage, generates a second current based on the fourth voltage, and determines the data stored in the memory cell at the time of the first readout by adding a third current to the first current or the second current.

3. The semiconductor memory device according to claim 1 , wherein the first circuit stops applying the second voltage before the first readout is performed.

4. The semiconductor memory device according to claim 3 , wherein the first circuit generates a first current based on the third voltage, generates a second current based on the fourth voltage, and determines the data stored in the memory cell at the time of the first readout by adding a third current to the first current or the second current.

5. A semiconductor memory device, comprising:

a memory cell comprising a switching element and a resistance change element; and

a first circuit that generates a second voltage based on an ON/OFF state of the switching element by applying a first voltage to the memory cell to perform a first readout on the memory cell, generates a fourth voltage based on the ON/OFF state of the switching element by applying a third voltage to the memory cell while applying the first voltage to the memory cell in parallel and performing a first voltage application to perform a second readout on the memory cell, determines an ON state of the switching element based on the second voltage and the fourth voltage, generates a fifth voltage by performing the first voltage application to perform a third readout on the switching element in the ON state when the switching element is in the ON state, writes first data in the memory cell on which the third readout is performed, generates a sixth voltage based on a first data resistance state of the resistance change element by performing the first voltage application to perform a fourth readout on the memory cell in which the first data is written, and determines data stored in the memory cell at a time of the third readout based on the fifth voltage and the sixth voltage.

6. The semiconductor memory device according to claim 5 , wherein the first circuit generates a first current based on the second voltage, generates a second current based on the fourth voltage, determines an ON state of the memory cell by adding a third current to the first current or the second current, generates a fourth current based on the fifth voltage, generates a fifth current based on the sixth voltage, and determines the data stored in the memory cell at the time of the third readout by adding a sixth current to the fourth current or the fifth current.

7. The semiconductor memory device according to claim 6 , wherein the first circuit repeats the first readout when it is determined that the memory cell is not in the ON state.

8. The semiconductor memory device according to claim 5 , wherein an application time of the third voltage is shorter than an application time of the first voltage.

9. The semiconductor memory device according to claim 8 , wherein the first circuit generates a first current based on the second voltage, generates a second current based on the fourth voltage, determines an ON state of the memory cell by adding a third current to the first current or the second current, generates a fourth current based on the fifth voltage, generates a fifth current based on the sixth voltage, and determines the data stored in the memory cell at the time of the third readout by adding a sixth current to the fourth current or the fifth current.

10. The semiconductor memory device according to claim 8 , wherein the first circuit repeats the first readout when it is determined that the memory cell is not in an ON state.

11. The semiconductor memory device according to claim 5 , wherein the first circuit changes the third voltage and repeats the first readout when it is determined that the switching element is not in the ON state.

12. A semiconductor memory device, comprising:

a memory cell comprising a switching element and a resistance change element; and

a first circuit that generates a first voltage by supplying a first current to the memory cell, generates a second voltage by supplying a second current to the memory cell while supplying the first current to the memory cell, determines an ON state of the memory cell by comparing magnitudes of the first voltage and the second voltage, generates a third voltage by performing a first readout on the memory cell in the ON state when the memory cell is in the ON state, writes first data into the memory cell on which the first readout is performed, generates a fourth voltage by performing a second readout on the memory cell in which the first data is written, and determines data stored in the memory cell at a time of the first readout based on the third voltage and the fourth voltage.

13. The semiconductor memory device according to claim 12 , wherein the first circuit generates a third current based on the third voltage, generates a fourth current based on the fourth voltage, and determines the data stored in the memory cell at the time of the first readout by adding a fifth current to the third current or the fourth current.

14. The semiconductor memory device according to claim 13 , wherein the first circuit repeats generation of the second voltage when it is determined that the memory cell is not in the ON state.

15. The semiconductor memory device according to claim 12 , wherein a supplying time of the second current is shorter than a supplying time of the first current.

16. The semiconductor memory device according to claim 15 , wherein the first circuit generates a third current based on the third voltage, generates a fourth current based on the fourth voltage, and determines the data stored in the memory cell at the time of the first readout by adding a fifth current to the third current or the fourth current.

17. The semiconductor memory device according to claim 16 , wherein the first circuit repeats generation of the second voltage when it is determined that the memory cell is not in the ON state.

18. The semiconductor memory device according to claim 15 , wherein the first circuit repeats generation of the second voltage when it is determined that the memory cell is not in the ON state.

19. The semiconductor memory device according to claim 12 , wherein the first circuit repeats generation of the second voltage when it is determined that the memory cell is not in the ON state.

20. A semiconductor memory device, comprising:

a memory cell comprising a switching element and a resistance change element;

a first circuit that applies a constant voltage to the memory cell for an amount of time; and

a second circuit that applies a constant current to the memory cell for an amount of time, wherein

the semiconductor memory device places the memory cell into an ON state by applying, while applying a first current to the memory cell by the first circuit, a second voltage to the memory cell by the second circuit, and performs readout on the memory cell in the ON state by the first current.