Magnetic memory device and manufacturing method of the same
According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a fixed magnetization direction, a nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the nonmagnetic layer and having a variable magnetization direction, a first insulating layer provided along a side surface of the stacked structure and having an upper end located at a position lower than an upper end of the side surface of the stacked structure, and a second insulating layer covering the first insulating layer and having an upper end located at a position higher than the upper end of the first insulating layer.
1. A magnetic memory device comprising:
a stacked structure including a first magnetic layer having a fixed magnetization direction, a nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the nonmagnetic layer and having a variable magnetization direction;
a first insulating layer provided along a side surface of the stacked structure, an upper end of the first insulating layer being located at a position lower than an upper end of a side surface of the second magnetic layer; and
a second insulating layer covering the first insulating layer, an upper end of the second insulating layer being located at a position higher than the upper end of the first insulating layer.
2. The device of claim 1 , wherein the second magnetic layer includes a first magnetic material part formed of a magnetic material, a nonmagnetic material part provided on the first magnetic material part and formed of a nonmagnetic material, and a second magnetic material part provided on the nonmagnetic material part and formed of a magnetic material.
3. The device of claim 2 , wherein the second magnetic material part is thicker than the first magnetic material part.
4. The device of claim 2 , wherein a thickness of the second magnetic material part is at least ten times as large as a thickness of the first magnetic material part.
5. The device of claim 1 , wherein the first magnetic layer has perpendicular magnetization, and the second magnetic layer has perpendicular magnetization.
6. The device of claim 1 , wherein the stacked structure forms a spin transfer torque (STT) magnetoresistive element.