Light-emitting device and manufacturing method thereof
The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.
1. A light-emitting device, comprising:
a substrate;
a light-emitting stack bonded to the substrate and having a light-emitting layer with a first width;
an electrode on the light-emitting stack;
a layer between the substrate and the light-emitting stack and having a second width larger than the first width;
a passivation layer on the light-emitting stack and having a first roughened surface; and
a plurality of voids formed in the layer;
wherein in a cross-sectional view, the electrode and the plurality of voids are not overlapped in a vertical direction, each of the plurality of voids is sealed in the layer and one of the plurality of voids has a third width and a fourth width different from the third width, wherein the light-emitting stack further comprises a first semiconductor layer between the light-emitting layer and the passivation layer, wherein the first semiconductor layer has a second roughened surface.
2. The light-emitting device of claim 1 , further comprising a reflector between the layer and the substrate.
3. The light-emitting device of claim 2 , wherein the reflector comprises gold (Au), silver (Ag) or aluminum (Al).
4. The light-emitting device of claim 1 , wherein the light-emitting stack has a side wall covered by the passivation layer.
5. The light-emitting device of claim 1 , wherein the electrode has a portion covered by the passivation layer.
6. The light-emitting device of claim 5 , wherein the electrode has an upper surface and a side surface, and the passivation layer covers the upper surface and the side surface.
7. The light-emitting device of claim 1 , wherein the electrode has an upper surface above the first roughened surface in the cross-sectional view.
8. The light-emitting device of claim 1 , wherein the light-emitting stack further comprises a second semiconductor layer between the light-emitting layer and the layer, wherein the second semiconductor layer and the first semiconductor layer are of different conductivity types.
9. The light-emitting device of claim 1 , wherein the light-emitting layer comprises a III-V group material.
10. The light-emitting device of claim 1 , wherein the layer has a side wall covered by the passivation layer.
11. A light-emitting device, comprising:
a substrate;
a light-emitting stack bonded to the substrate and having a light-emitting layer with a first width;
an electrode on the light-emitting stack;
a semiconductor layer between the substrate and the light-emitting stack and having three layers, wherein a bottom layer has a second width larger than the first width;
a void formed in the semiconductor layer and extending in the three layers; and
an aluminum-contained layer between the semiconductor layer and the light-emitting stack;
wherein in a cross-sectional view, the electrode and the void are not overlapped in a vertical direction.
12. The light-emitting device of claim 11 , wherein the aluminum-contained layer is devoid of any void.
13. The light-emitting device of claim 11 , wherein the void is sealed in the semiconductor layer.
14. The light-emitting device of claim 11 , further comprising a passivation layer on the light-emitting stack.
15. The light-emitting device of claim 14 , wherein the semiconductor layer has a side wall not covered by the passivation layer.
16. A light-emitting device, comprising:
a substrate;
a light-emitting stack bonded to the substrate and having a light-emitting layer with a first width;
an electrode on the light-emitting stack;
a semiconductor layer between the substrate and the light-emitting stack and having a second width larger than the first width;
a conductive layer between the semiconductor layer and the substrate with the second width;
an aluminum-contained layer with the first width between the semiconductor layer and the light-emitting stack;
a void extending in the semiconductor layer; and
an opening of the void formed at an interface between the semiconductor layer and the conductive layer;
wherein in a cross-sectional view, the electrode and the void are not overlapped in a vertical direction.
17. The light-emitting device of claim 16 , wherein in the cross-sectional view, the void is sealed in the light-emitting device.
18. The light-emitting device of claim 16 , wherein the void has a third width and a fourth width different from the third width.