Semiconductor memory device

1. A semiconductor memory device comprising:

a first wiring;

a first memory transistor connected to the first wiring;

a first transistor connected between the first wiring and the first memory transistor;

a second transistor connected between the first wiring and the first transistor;

a second wiring connected to a gate electrode of the first memory transistor;

a third wiring connected to a gate electrode of the first transistor;

a fourth wiring connected to a gate electrode of the second transistor; and

a control circuit configured to execute an erase operation that erases data of the first memory transistor; wherein

from a first timing of the erase operation to a second timing after the first timing, the control circuit:

maintains a voltage difference between the first wiring and the third wiring at a predetermined value;

maintains a voltage difference between the third wiring and the fourth wiring at a predetermined value;

controls a voltage of the first wiring to become larger than a voltage of the third wiring;

controls the voltage of the third wiring to become larger than a voltage of the fourth wiring; and

controls a timing from which the voltage of the third wiring increases from an initial voltage to become different from a timing from which the voltage of the fourth wiring increases from the initial voltage.

2. The semiconductor memory device according to claim 1 , wherein

from the first timing of the erase operation to the second timing, the control circuit:

maintains a voltage difference between the fourth wiring and the second wiring at a predetermined value; and

controls the voltage of the fourth wiring to become larger than a voltage of the second wiring.

3. The semiconductor memory device according to claim 1 , further comprising:

a third transistor connected between the first transistor and the second transistor; and

a fifth wiring connected to a gate electrode of the third transistor, wherein

from the first timing of the erase operation to the second timing, the control circuit:

maintains a voltage difference between the first wiring and the fifth wiring at a predetermined value;

controls the voltage of the first wiring to become larger than a voltage of the fifth wiring; and

controls the voltage of the fifth wiring to become larger than the voltage of the fourth wiring.

4. The semiconductor memory device according to claim 3 , wherein

the fifth wiring is electrically connected to the third wiring.

5. The semiconductor memory device according to claim 1 , further comprising:

a fourth transistor connected between the first transistor and the second transistor; and

a sixth wiring connected to a gate electrode of the fourth transistor, wherein

from the first timing of the erase operation to the second timing, the control circuit;

maintains a voltage difference between the third wiring and the sixth wiring at a predetermined value; and

controls the voltage of the third wiring to become larger than a voltage of the sixth wiring.

6. The semiconductor memory device according to claim 5 , wherein

from the first timing to the second timing, the voltage of the sixth wiring differs from the voltage of the fourth wiring.

7. The semiconductor memory device according to claim 1 , comprising:

a second memory transistor connected to the first wiring;

a fifth transistor connected between the first wiring and the second memory transistor;

a sixth transistor connected between the first wiring and the fifth transistor;

a seventh wiring connected to a gate electrode of the second memory transistor;

an eighth wiring connected to a gate electrode of the fifth transistor; and

a ninth wiring connected to a gate electrode of the sixth transistor.

8. The semiconductor memory device according to claim 7 , wherein

the ninth wiring is electrically connected to the fourth wiring.

9. The semiconductor memory device according to claim 1 , comprising:

a tenth wiring connected to the first memory transistor;

a seventh transistor connected between the tenth wiring and the first memory transistor;

an eighth transistor connected between the tenth wiring and the seventh transistor;

an eleventh wiring connected to a gate electrode of the seventh transistor; and

a twelfth wiring connected to a gate electrode of the eighth transistor, wherein

from the first timing to the second timing, the control circuit:

maintains a voltage difference between the tenth wiring and the eleventh wiring at a predetermined value;

maintains a voltage difference between the eleventh wiring and the twelfth wiring at a predetermined value;

controls a voltage of the tenth wiring to become larger than a voltage of the eleventh wiring; and

controls a voltage of the eleventh wiring to become larger than a voltage of the twelfth wiring.

10. The semiconductor memory device according to claim 9 wherein

from the first timing to the second timing;

the voltage of the first wiring and the voltage of the tenth wiring are larger than the voltages of the third wiring and the eleventh wiring;

the voltages of the third wiring and the eleventh wiring are larger than the voltages of the fourth wiring and the twelfth wiring; and

the voltages of the fourth wiring and the twelfth wiring are larger than the voltage of the second wiring.

11. The semiconductor memory device according to claim 1 , comprising:

a substrate;

a plurality of conducting layers arranged in a first direction intersecting with a surface of the substrate;

a semiconductor layer that extends in the first direction, the semiconductor being opposed to the plurality of conducting layers; and

a gate insulating film disposed between the plurality of conducting layers and the semiconductor layer, the gate insulating film including an electric charge accumulating film, wherein

the first memory transistor includes a first conducting layer among the plurality of conducting layers, a first region opposed to the first conducting layer of the semiconductor layer, and a part of the electric charge accumulating film disposed between the first conducting layer and the first region,

the first transistor includes a second conducting layer farther from the substrate than the first conducting layer among the plurality of conducting layers and a second region opposed to the second conducting layer of the semiconductor layer, and

the second transistor includes a third conducting layer farther from the substrate than the second conducting layer among the plurality of conducting layers and a third region opposed to the third conducting layer of the semiconductor layer.

12. The semiconductor memory device according to claim 11 , wherein

the second transistor includes a fourth region opposed to the third conducting layer of the semiconductor layer,

the fourth region of the semiconductor layer is farther from the substrate than the third region of the semiconductor layer, and

an impurity concentration of N type impurities in the fourth region of the semiconductor layer is larger than an impurity concentration of N type impurities in the third region of the semiconductor layer.

13. The semiconductor memory device according to claim 11 , wherein

the first transistor includes a part of the electric charge accumulating film, and

the second transistor does not include a part of the electric charge accumulating film.

14. The semiconductor memory device according to claim 11 , comprising

a first insulating film that extends in the first direction, the first insulating film having an outer peripheral surface surrounded by the semiconductor layer, wherein

the third region of the semiconductor layer has a surface connected to one end in the first direction of the second region of the semiconductor layer and one end in the first direction of the first insulating film.

15. A data erase method for a semiconductor memory device, wherein

the semiconductor memory device includes:

a first wiring;

a first memory transistor connected to the first wiring;

a first transistor connected between the first wiring and the first memory transistor;

a second transistor connected between the first wiring and the first transistor;

a second wiring connected to a gate electrode of the first memory transistor;

a third wiring connected to a gate electrode of the first transistor;

a fourth wiring connected to a gate electrode of the second transistor; and

a control circuit configured to execute an erase operation that erases data of the first memory transistor, wherein

the data erase method comprises, from a first timing of the erase operation to a second timing after the first timing, by the control circuit:

maintaining a voltage difference between the first wiring and the third wiring at a predetermined value,

maintaining a voltage difference between the third wiring and the fourth wiring at a predetermined value,

controlling a voltage of the first wiring to become larger than a voltage of the third wiring;

controlling the voltage of the third wiring to become larger than a voltage of the fourth wiring; and

controlling a timing from which the voltage of the third wiring increases from an initial voltage to become different from a timing from which the voltage of the fourth wiring increases from the initial voltage.

16. The data erase method according to claim 15 , comprising

from the first timing of the erase operation to the second timing, by the control circuit:

maintaining a voltage difference between the fourth wiring and the second wiring at a predetermined value, and

controlling a voltage of the fourth wiring to become larger than the voltage of the second wiring.

17. The semiconductor memory device according to claim 7 , comprising:

a first memory string connected to a first part of the first wiring, the first memory string including the first memory transistor, the first transistor, and the second transistor; and

a second memory string connected to a second part different from the first part of the first wiring, the second memory string including the second memory transistor, the fifth transistor, and the sixth transistor, wherein

the control circuit is configured to execute an erase operation that erases data of at least one of the first memory transistor and the second memory transistor, a writing operation that writes data to the first memory transistor or the second memory transistor, and a reading operation that reads data from the first memory transistor or the second memory transistor, and

at predetermined timings of the writing operation and the reading operation, the voltage of the fourth wiring and a voltage of the ninth wiring become voltages having an identical magnitude.

18. The semiconductor memory device according to claim 17 , wherein

at the predetermined timings of the writing operation and the reading operation, the voltage of the third wiring and a voltage of the eighth wiring become voltages having different magnitudes.

19. A semiconductor memory device comprising:

a first wiring;

a first memory transistor connected to the first wiring;

a first transistor connected between the first wiring and the first memory transistor;

a second transistor connected between the first wiring and the first transistor;

a second wiring connected to agate electrode of the first memory transistor;

a third wiring connected to a gate electrode of the first transistor;

a fourth wiring connected to a gate electrode of the second transistor; and

a control circuit configured to execute an erase operation that erases data of the first memory transistor; wherein

from a first timing of the erase operation to a second timing after the first timing, the control circuit:

maintains a voltage difference between the first wiring and the third wiring at a predetermined value;

maintains a voltage difference between the third wiring and the fourth wiring at a predetermined value;

controls a voltage of the first wiring to become larger than a voltage of the third wiring; and

controls the voltage of the third wiring to become larger than a voltage of the fourth wiring, wherein

the control circuit;

from a third timing prior to the first timing of the erase operation to a fourth timing between the third timing and the first timing,

increases the voltage of the first wiring from a first voltage to a second voltage larger than the voltages of the second wiring, the third wiring, and the fourth wiring; and

from the fourth timing of the erase operation to a fifth timing between the fourth timing and the first timing,

increases the voltage of the first wiring from the second voltage to a third voltage, and

increases the voltage of the third wiring from a fourth voltage to a fifth voltage larger than the voltages of the second wiring and the fourth wiring and smaller than the third voltage.

20. The semiconductor memory device according to claim 19 , wherein

the control circuit;

from the fifth timing of the erase operation to a sixth timing between the fifth timing and the first timing,

increases the voltage of the first wiring from the third voltage to a sixth voltage,

increases the voltage of the third wiring from the fifth voltage to a seventh voltage larger than the voltages of the second wiring and the fourth wiring and smaller than the sixth voltage, and

increases the voltage of the fourth wiring from an eighth voltage to a ninth voltage larger than the voltage of the second wiring and smaller than the seventh voltage.