Bottom barrier free interconnects without voids
Techniques to enable bottom barrier free interconnects without voids. In one aspect, a method of forming interconnects includes: forming metal lines embedded in a dielectric; depositing a sacrificial dielectric over the metal lines; patterning vias and trenches in the sacrificial dielectric down to the metal lines, with the trenches positioned over the vias; lining the vias and trenches with a barrier layer; depositing a conductor into the vias and trenches over the barrier layer to form the interconnects; forming a selective capping layer on the interconnects; removing the sacrificial dielectric in its entirety; and depositing an interlayer dielectric (ILD) to replace the sacrificial dielectric. An interconnect structure is also provided.
1. A method of forming interconnects, the method comprising the steps of:
forming metal lines embedded in a dielectric;
depositing a sacrificial dielectric over the metal lines;
patterning vias and trenches in the sacrificial dielectric down to the metal lines, with the trenches positioned over the vias;
lining the vias and trenches with a barrier layer, wherein the barrier layer that lines the vias is present along only sidewalls of the vias;
depositing a conductor into the vias and trenches over the barrier layer to form the interconnects;
forming a selective capping layer on the interconnects;
removing the sacrificial dielectric in its entirety; and
depositing an interlayer dielectric (ILD) to replace the sacrificial dielectric.
2. The method of claim 1 , wherein the sacrificial dielectric comprises a material selected from the group consisting of: silicon dioxide (SiO 2 ), silicon nitride (SiN), and combinations thereof.
3. The method of claim 1 , wherein the barrier layer comprises tantalum nitride (TaN).
4. The method of claim 1 , wherein the step of lining the vias and trenches with a barrier layer comprises the steps of:
depositing the barrier layer onto exposed surfaces of the sacrificial dielectric selective to exposed surfaces of the metal lines at a bottom of the vias.
5. The method of claim 4 , wherein the barrier layer is deposited using atomic layer deposition (ALD).
6. The method of claim 4 , wherein the barrier layer is deposited to a thickness of less than or equal to about 1 nm.
7. The method of claim 4 , wherein the barrier layer is deposited to a thickness of from about 0.5 nm to about 1 nm, and ranges therebetween.
8. The method of claim 1 , wherein the conductor is selected from the group consisting of: cobalt (Co), ruthenium (Ru), copper (Cu), rhodium (Rh) iridium (Ir), and combinations thereof.
9. The method of claim 1 , wherein the conductor is selected from the group consisting of: Co, Ru, and combinations thereof.
10. The method of claim 1 , wherein the barrier layer is absent at a bottom of the vias in between the interconnects and the metal lines.
11. The method of claim 1 , wherein the selective capping layer comprises a material selected from the group consisting of: ruthenium (Ru), cobalt (Co), tungsten (W), nickel (Ni), and combinations thereof.
12. The method of claim 1 , wherein the selective capping layer comprises Ru, and wherein the method further comprises the step of:
forming the selective capping layer on the interconnects using a selective chemical vapor deposition (CVD) process.
13. The method of claim 1 , wherein the ILD comprises a material selected from the group consisting of: silicon oxide (SiOx), organosilicate glass (SiCOH), porous organosilicate glass (pSiCOH), and combinations thereof.
14. The method of claim 1 , wherein the ILD is deposited using a flowable CVD process.
15. The method of claim 1 , further comprising the step of:
forming a blanket capping layer over the interconnects and the ILD.