IP Library Granted Patent US 11,043,918
Granted Patent B2
US 11,043,918 · App. 16/589,369 · Granted Jun 22, 2021

Power amplifier circuit

Inventors: Satoshi Tanaka (Kyoto, JP); Satoshi Arayashiki (Kyoto, JP); Satoshi Goto (Kyoto, JP); Yusuke Tanaka (Kyoto, JP)
Assignee: MURATA MANUFACTURING CO., LTD.
H03F1/0216H03F3/21H03F2200/451H04W88/02
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,043,918
App. No.
16/589,369
Granted
Jun 22, 2021
Kind
B2
Abstract

A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.

Claims (59)

1. A power amplifier circuit configured to amplify a first high-frequency differential signal that includes a first high-frequency signal of positive polarity and a second high-frequency signal of negative polarity, and to output a second high-frequency differential signal that includes a third high-frequency signal of negative polarity and a fourth high-frequency signal of positive polarity, the power amplifier circuit comprising:

a first transistor having an emitter electrically connected to a common potential, a base to which the first high-frequency signal is input, and a collector from which the third high-frequency signal is output;

a second transistor having an emitter electrically connected to the common potential, a base to which the second high-frequency signal is input, and a collector from which the fourth high-frequency signal is output;

a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and

a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor,

wherein the first capacitance circuit comprises a third transistor having a collector electrically connected to the collector of the second transistor, a base electrically connected to the base of the first transistor, and an emitter electrically connected to the base of the third transistor, and

wherein the second capacitance circuit comprises a fourth transistor having a collector electrically connected to the collector of the first transistor, a base electrically connected to the base of the second transistor, and an emitter electrically connected to the base of the fourth transistor.

2. The power amplifier circuit according to claim 1 , further comprising:

a first capacitor electrically connected between the collector of the first transistor and the base of the first transistor; and

a second capacitor electrically connected between the collector of the second transistor and the base of the second transistor,

wherein the first capacitance circuit further comprises a third capacitor electrically connected between the collector of the second transistor and the base of the first transistor, and

wherein the second capacitance circuit further comprises a fourth capacitor electrically connected between the collector of the first transistor and the base of the second transistor.

3. The power amplifier circuit according to claim 1 ,

wherein a collector-base capacitance of the third transistor is equal to a collector-base capacitance of the first transistor, and

wherein a collector-base capacitance of the fourth transistor is equal to a collector-base capacitance of the second transistor.

4. The power amplifier circuit according to claim 2 ,

wherein a collector-base capacitance of the third transistor is equal to a collector-base capacitance of the first transistor, and

wherein a collector-base capacitance of the fourth transistor is equal to a collector-base capacitance of the second transistor.

5. The power amplifier circuit according to claim 1 ,

wherein a size of the third transistor is equal to a size of the first transistor, and

wherein a size of the fourth transistor is equal to a size of the second transistor.

6. The power amplifier circuit according to claim 2 ,

wherein a size of the third transistor is equal to a size of the first transistor, and

wherein a size of the fourth transistor is equal to a size of the second transistor.

7. The power amplifier circuit according to claim 1 , further comprising:

a first capacitor electrically connected between the collector of the first transistor and the base of the first transistor; and

a second capacitor electrically connected between the collector of the second transistor and the base of the second transistor,

wherein the first capacitance circuit comprises a third capacitor electrically connected between the collector of the second transistor and the base of the first transistor, and

wherein the second capacitance circuit comprises a fourth capacitor electrically connected between the collector of the first transistor and the base of the second transistor.

8. The power amplifier circuit according to claim 2 ,

wherein a capacitance of the third capacitor is equal to a capacitance of the first capacitor, and

wherein a capacitance of the fourth capacitor is equal to a capacitance of the second capacitor.

9. The power amplifier circuit according to claim 5 ,

wherein a capacitance of the third capacitor is equal to a capacitance of the first capacitor, and

wherein a capacitance of the fourth capacitor is equal to a capacitance of the second capacitor.

10. A power amplifier circuit configured to amplify a first high-frequency differential signal that includes a first high-frequency signal of positive polarity and a second high-frequency signal of negative polarity, and to output a second high-frequency differential signal that includes a third high-frequency signal of negative polarity and a fourth high-frequency signal of positive polarity, the power amplifier circuit comprising:

a first transistor having an emitter electrically connected to a common potential, a base to which the first high-frequency signal is input, and a collector from which the third high-frequency signal is output;

a second transistor having an emitter electrically connected to the common potential, a base to which the second high-frequency signal is input, and a collector from which the fourth high-frequency signal is output;

a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor;

a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor;

a first capacitor electrically connected between the collector of the first transistor and the base of the first transistor; and

a second capacitor electrically connected between the collector of the second transistor and the base of the second transistor,

wherein the first capacitance circuit comprises a third capacitor electrically connected between the collector of the second transistor and the base of the first transistor, and

wherein the second capacitance circuit comprises a fourth capacitor electrically connected between the collector of the first transistor and the base of the second transistor.

11. The power amplifier circuit according to claim 10 ,

wherein the first capacitance circuit comprises a third transistor having a collector electrically connected to the collector of the second transistor and a base electrically connected to the base of the first transistor, and

wherein the second capacitance circuit comprises a fourth transistor having a collector electrically connected to the collector of the first transistor and a base electrically connected to the base of the second transistor.

12. The power amplifier circuit according to claim 11 ,

wherein a collector-base capacitance of the third transistor is equal to a collector-base capacitance of the first transistor, and

wherein a collector-base capacitance of the fourth transistor is equal to a collector-base capacitance of the second transistor.

13. The power amplifier circuit according to claim 11 ,

wherein a size of the third transistor is equal to a size of the first transistor, and

wherein a size of the fourth transistor is equal to a size of the second transistor.

14. The power amplifier circuit according to claim 10 ,

wherein a capacitance of the third capacitor is equal to a capacitance of the first capacitor, and

wherein a capacitance of the fourth capacitor is equal to a capacitance of the second capacitor.

15. The power amplifier circuit according to claim 13 ,

wherein a capacitance of the third capacitor is equal to a capacitance of the first capacitor, and

wherein a capacitance of the fourth capacitor is equal to a capacitance of the second capacitor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 1, 2019
From: TANAKA, SATOSHI; ARAYASHIKI, SATOSHI; GOTO, SATOSHI; TANAKA, YUSUKE
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 050587/0379 →
Priority Claims (1)
JP JP2018-187387 · Oct 2, 2018 · national
Continuity (1)
Related Publication 20200106391A1 · Apr 2, 2020
Cited By (7)
US 12,413,147 US 12,567,875 US 12,573,993 US 12,592,668 US 12,683,561 US 12,683,636 US 12,707,396