Traveling wave modulator
In an embodiment, a method and apparatus for increasing bandwidth of an optical modulator by applying a first voltage applied to a beginning of a resistive line and applying a second voltage applied to an end of the resistive line; wherein the first voltage is less than the second voltage.
1. A method for increasing bandwidth of an optical modulator comprising a waveguide and a resistive line by:
applying a first bias voltage applied to a beginning of the resistive line; and
applying a second bias voltage applied to an end of the resistive line; wherein the first voltage is less than the second voltage.
2. The method of claim 1 wherein optical modulator further comprises one or more pn-junctions.
3. The method of claim 2 wherein a capacitance along the one or more pn-junctions increases per unit length along the waveguide.
4. The method of claim 3 wherein a resistance along the one or more pn-junctions increases along the waveguide.
5. The method of claim 3 wherein the change in resistance is caused by a change in doping of the one or more pn junctions.
6. The method of claim 5 wherein the change in resistance is created by locating a doped region of the waveguide closer to the guided optical wave by 0.1 to 1.0 microns.
7. The method of claim 1 wherein the applying of voltage to the resistive line enables modulation of light in the waveguide.
8. An apparatus for optical modulation comprising:
an optical modulator comprising a waveguide and a resistive line; wherein the resistive line is configured to receive an applied first bias voltage at a beginning of the resistive line; and is further configured to receive a second applied bias voltage to an end of the resistive line; wherein the first voltage is less than the second voltage.
9. The apparatus of claim 8 wherein the optical modulator further comprises one or more pn-junctions.
10. The apparatus of claim 9 wherein a capacitance along the one or more pn-junctions increases per unit length along the waveguide.
11. The apparatus of claim 10 wherein a resistance along the one or more pn-junctions increases along the waveguide.
12. The apparatus of claim 10 wherein the change in resistance is caused by a change in doping of the one or more pn junctions.
13. The apparatus of claim 12 wherein the change in resistance is created by locating a doped region of the waveguide closer to the guided optical wave by 0.1 to 1.0 microns.
14. The apparatus of claim 10 wherein application of voltage to the resistive line enables modulation of light in the waveguide.