Optoelectronic device

1. An optoelectronic device, comprising:

a substrate;

a semiconductor stack, formed on the substrate;

a current blocking region, comprising a first pad portion formed above the semiconductor stack and wherein the current blocking region comprises transparent insulated material;

a transparent conductive layer, formed on one of the current blocking region and a surface of the semiconductor stack;

a first opening, formed in the first pad portion, wherein in a top view, the first opening comprises elongated shape; and

a first electrode, formed on the transparent conductive layer, comprising a first pad electrode formed above the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening.

2. The optoelectronic device according to claim 1 , wherein the current blocking region further comprises a first finger portion; and

wherein the first electrode further comprises a first finger electrode extending from the first pad electrode and formed above the first finger portion.

3. The optoelectronic device according to claim 1 , wherein the transparent conductive layer comprises a second opening above the first opening.

4. The optoelectronic device according to claim 1 , wherein the first pad portion comprises an outmost edge and the first opening comprises an end aligned with the outmost edge.

5. The optoelectronic device according to claim 1 , wherein a contour which is composed by an outmost edge of the first pad portion and a pseudo edge of the first opening includes a composed shape; and the first opening passes through a center of the composed shape.

6. The optoelectronic device according to claim 1 , wherein the first opening comprises a plurality of opening branches, wherein a contour which is composed by an outmost edge of the first pad portion and a pseudo edge of the first opening includes a composed shape.

7. The optoelectronic device according to claim 6 , wherein the plurality of opening branches is symmetrically arranged in the first pad portion.

8. The optoelectronic device according to claim 6 , wherein one of the plurality of opening branches comprises an end pointing to a center of the composed shape.

9. The optoelectronic device according to claim 6 , wherein the first opening further comprises an opening region at a center of the composed shape.

10. The optoelectronic device according to claim 9 , wherein one of the plurality of opening branches connects to the opening region.

11. The optoelectronic device according to claim 6 , wherein one of the plurality of opening branches comprises a plurality of sections separated from each other.

12. The optoelectronic device according to claim 3 , wherein the second opening comprises a periphery, the first pad portion comprises an outmost edge and the periphery of the second opening is spaced apart from the outmost edge of the first pad portion.

13. The optoelectronic device according to claim 1 , wherein the first opening comprises a first area, the first pad portion and the first opening compose a total area, and a ratio of the first area to the total area is between 1% and 80%.

14. The optoelectronic device according to claim 1 , wherein a width of the first opening is smaller than or equal to 10 μm.

15. An optoelectronic device, comprising:

a substrate;

a semiconductor stack, formed on the substrate;

a current blocking region, comprising a first pad portion formed above the semiconductor stack and wherein the current blocking region comprises transparent insulated material;

a transparent conductive layer, formed on one of the current blocking region and a surface of the semiconductor stack;

a first opening, formed in and extending in the first pad portion, and wherein the first pad portion is separated into a plurality of portions by the first opening; and

a first electrode, formed on the transparent conductive layer, comprising a first pad electrode formed above the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening.

16. The optoelectronic device according to claim 15 , wherein a contour which is composed by an outmost edge of the first pad portion and a pseudo edge of the first opening includes a composed shape; and the first opening passes through a center of the composed shape.

17. The optoelectronic device according to claim 15 , wherein the current blocking region further comprises a first finger portion, and wherein the first electrode further comprises a first finger electrode extending from the first pad electrode and formed above the first finger portion.

18. The optoelectronic device according to claim 15 , wherein a width of the first opening is smaller than or equal to 10 μm.

19. The optoelectronic device according to claim 15 , wherein:

the semiconductor stack comprises a first semiconductor layer, an active layer and a second semiconductor layer sequentially formed on the substrate;

the current blocking region is formed on the second semiconductor layer; and

the optoelectronic device further comprises a second electrode on the first semiconductor layer.

20. The optoelectronic device according to claim 15 , wherein:

the transparent conductive layer comprises a second opening above the first opening;

a contour which is composed by an outmost edge of the first pad portion and a pseudo edge of the first opening includes a composed shape; and

the composed shape is different from a shape of the second opening.