Light-emitting device

1. A light-emitting device, comprising:

a first light-emitting area comprising a first semiconductor light-emitting unit configured to emit a red light;

a second light-emitting area comprising a second semiconductor light-emitting unit configured to emit a blue light; and

a third light-emitting area comprising a third semiconductor light-emitting unit configured to emit a green light,

wherein the first light-emitting area is larger than the second light-emitting area and larger than the third light-emitting area,

wherein the second semiconductor light-emitting unit and the third semiconductor light-emitting unit are disposed on the first semiconductor light-emitting unit, and

wherein the second semiconductor light-emitting unit comprises a first portion, a second portion, and a third portion, the first portion is between the second portion and the third portion, and the first portion overlaps the first semiconductor light-emitting unit, and the second portion and the third portion do not overlap the first semiconductor light-emitting unit, and

wherein each of the first semiconductor light-emitting unit, the second semiconductor light-emitting unit, and the third semiconductor light-emitting unit has a width of less than 100 μm and a length of less than 100 μm.

2. The light-emitting device according to claim 1 , further comprising a supporting body, wherein the first semiconductor light-emitting unit, the second semiconductor light-emitting unit, and the third semiconductor light-emitting unit are disposed on the supporting body.

3. The light-emitting device according to claim 2 , wherein the first semiconductor light-emitting unit, the second semiconductor light-emitting unit, and the third semiconductor light-emitting unit are flip chips.

4. The light-emitting device according to claim 1 , wherein the second semiconductor light-emitting unit is physically separated from the third semiconductor light-emitting unit.

5. The light-emitting device according to claim 1 , wherein the first semiconductor light-emitting unit does not have a growth substrate or has a thinned growth substrate.

6. The light-emitting device according to claim 1 , wherein the first semiconductor light-emitting unit is thinner than the second semiconductor light-emitting unit and the third semiconductor light-emitting unit.

7. The light-emitting device according to claim 1 , further comprising a glue continuously covering the first semiconductor light-emitting unit, the second semiconductor light-emitting unit, and the third semiconductor light-emitting unit.

8. The light-emitting device according to claim 1 , wherein the first light-emitting area is at least 1.5 times of the second light-emitting area.

9. The light-emitting device according to claim 2 , further comprising a paste disposed between the first semiconductor light-emitting unit and the supporting body, wherein the paste comprises an insulating material and a conductive structure surrounded by the insulating material.

10. The light-emitting device according to claim 9 , wherein the conductive structure comprises an outer side surface which has a necking shape.

11. The light-emitting device according to claim 9 , wherein the insulating material comprises an outermost surface, the outermost surface has an angle with respect to the supporting body, and the angle increases along the direction from the outermost surface toward the first semiconductor light-emitting unit.

12. The light-emitting device according to claim 9 , wherein the supporting body comprises a bonding pad, the first semiconductor light-emitting unit comprises an electrode pad facing to the bonding pad, the conductive structure is connected to the bonding pad and the electrode pad, and wherein the conductive structure comprises a minimum width smaller than the widths of the bonding pad and the electrode pad.

13. The light-emitting device according to claim 1 , wherein each of the second semiconductor light-emitting unit and the third semiconductor light-emitting unit comprises a reflective layer.

14. The light-emitting device according to claim 1 , wherein the first semiconductor light-emitting unit comprises a portion which is not covered by the second semiconductor light-emitting unit and the third semiconductor light-emitting unit and between the second semiconductor light-emitting unit and the third semiconductor light-emitting unit.

15. The light-emitting device according to claim 1 , wherein the longitudinal direction of the second semiconductor light-emitting unit is parallel to that of the third semiconductor light-emitting unit.

16. The light-emitting device according to claim 1 , wherein the first semiconductor light-emitting unit has at least two separated portions which are not covered by the second semiconductor light-emitting unit and the third semiconductor light-emitting unit.