Nanograting method and apparatus
A method of manufacturing a waveguide having a combination of a binary grating structure and a blazed grating structure includes cutting a substrate off-axis, depositing a first layer on the substrate, and depositing a resist layer on the first layer. The resist layer includes a pattern. The method also includes etching the first layer in the pattern using the resist layer as a mask. The pattern includes a first region and a second region. The method further includes creating the binary grating structure in the substrate in the second region and creating the blazed grating structure in the substrate in the first region.
1. A method of manufacturing a waveguide having a multi-level binary grating structure, the method comprising:
coating a first etch stop layer on a first substrate;
adding a second substrate on the first etch stop layer;
depositing a first resist layer on the second substrate, wherein the first resist layer includes at least one first opening;
depositing a second etch stop layer on the second substrate in the at least one first opening;
removing the first resist layer from the second substrate;
adding a third substrate on the second substrate and the second etch stop layer;
depositing a second resist layer on the third substrate, wherein the second resist layer includes at least one second opening;
depositing a third etch stop layer on the third substrate in the at least one second opening;
removing the second resist layer from the third substrate;
etching the second substrate and the third substrate, leaving the first substrate, the first etch stop layer, the second etch stop layer and the second substrate in the at least one first opening, and the third etch stop layer and the third substrate in the at least one second opening; and
etching an exposed portion of the first etch stop layer, an exposed portion of the second etch stop layer, and the third etch stop layer, forming the multi-level binary grating structure.
2. The method of claim 1 , wherein the first substrate comprises silicon or quartz.
3. The method of claim 1 , wherein the second substrate and the third substrate comprise at least one of silicon, silicon dioxide, and silicon nitride.
4. The method of claim 1 , wherein at least one of the first resist layer and the second resist layer is removed by lift off.
5. The method of claim 1 , wherein at least one of the first resist layer and the second resist layer is removed by etching.
6. The method of claim 1 , wherein at least one of the first resist layer and the second resist layer is removed by dissolving.