Light-emitting thyristor, light-emitting element chip, optical print head, and image forming apparatus
A light-emitting thyristor includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the first conductivity type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type arranged adjacent to the third semiconductor layer. The first semiconductor layer includes an active layer adjacent to the second semiconductor layer, the second semiconductor layer includes a first layer adjacent to the active layer and a second layer arranged between the first layer and the third semiconductor layer, and the first layer has a band gap wider than a band gap of the active layer and a band gap of the second layer.
1. A light-emitting thyristor comprising:
a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type arranged adjacent to the first semiconductor layer;
a third semiconductor layer of the first conductivity type arranged adjacent to the second semiconductor layer; and
a fourth semiconductor layer of the second conductivity type arranged adjacent to the third semiconductor layer, wherein
the first semiconductor layer includes an active layer adjacent to the second semiconductor layer,
the second semiconductor layer includes a first layer adjacent to the active layer and a second layer arranged between the first layer and the third semiconductor layer,
the first layer has a band gap wider than a band gap of the active layer and a band gap of the second layer, and
the band gap of the second layer is equal to or wider than the band gap of the active layer.
2. The light-emitting thyristor according to claim 1 , wherein impurity concentration of the first layer is lower than impurity concentration of the active layer and equal to impurity concentration of the second layer.
3. The light-emitting thyristor according to claim 1 , wherein impurity concentration of the first layer is lower than impurity concentration of the active layer and higher than impurity concentration of the second layer.
4. The light-emitting thyristor according to claim 1 , wherein impurity concentration of the first semiconductor layer is higher than impurity concentration of the second semiconductor layer and impurity concentration of the third semiconductor layer.
5. The light-emitting thyristor according to claim 1 , wherein impurity concentration of the fourth semiconductor layer is higher than impurity concentration of the second semiconductor layer and impurity concentration of the third semiconductor layer.
6. The light-emitting thyristor according to claim 1 , wherein
the active layer is an AlGaAs layer whose Al composition ratio is higher than or equal to 0.14 and lower than or equal to 0.18,
the second layer is an AlGaAs layer whose Al composition ratio is higher than or equal to 0.14 and lower than or equal to 0.25,
the third semiconductor layer is an AlGaAs layer whose Al composition ratio is higher than or equal to 0.14 and lower than or equal to 0.25, and
the first layer is an AlGaAs layer whose Al composition ratio is higher than or equal to 0.2 and lower than or equal to 0.5.
7. The light-emitting thyristor according to claim 1 , wherein the first semiconductor layer includes:
a third layer adjacent to the active layer on a side opposite to the first layer; and
a fourth layer adjacent to the third layer on a side opposite to the active layer,
wherein the third layer has a band gap wider than the band gap of the active layer and the band gap of the fourth layer.
8. The light-emitting thyristor according to claim 7 , wherein
the active layer is an AlGaAs layer whose Al composition ratio is higher than or equal to 0.14 and lower than or equal to 0.18,
the second layer is an AlGaAs layer whose Al composition ratio is higher than or equal to 0.14 and lower than or equal to 0.25,
the third semiconductor layer is an AlGaAs layer whose Al composition ratio is higher than or equal to 0.14 and lower than or equal to 0.25,
the first layer is an AlGaAs layer whose Al composition ratio is higher than or equal to 0.2 and lower than or equal to 0.5, and
the third layer is an AlGaAs layer whose Al composition ratio is higher than or equal to 0.2 and lower than or equal to 0.5.
9. The light-emitting thyristor according to claim 1 , wherein the first conductivity type is a P type and the second conductivity type is an N type.
10. The light-emitting thyristor according to claim 1 , wherein the first conductivity type is an N type and the second conductivity type is a P type.
11. The light-emitting thyristor according to claim 1 , further comprising:
a first electrode electrically connected to the first semiconductor layer;
a second electrode electrically connected to the second semiconductor layer or the third semiconductor layer; and
a third electrode electrically connected to the fourth semiconductor layer.
12. A light-emitting element chip comprising:
a substrate part; and
the light-emitting thyristor according to claim 1 arranged on the substrate part.
13. The light-emitting element chip according to claim 12 , wherein the first semiconductor layer is arranged on a side closer to the substrate part than the fourth semiconductor layer.
14. The light-emitting element chip according to claim 12 , wherein the first semiconductor layer is arranged on a side farther from the substrate part than the fourth semiconductor layer.
15. An optical print head comprising the light-emitting element chip according to claim 12 .
16. An image forming apparatus comprising the optical print head according to claim 15 .