Microwave processing device
A microwave treatment apparatus includes a treatment chamber, a microwave supply, and a resonator unit. The treatment chamber is surrounded by a plurality of walls, and accommodates a heating target. The microwave supply supplies a microwave to the treatment chamber. The resonator unit is provided on one wall of the plurality of walls, and the resonator unit has a resonance frequency in a frequency band of the microwave. In this embodiment, the impedance of the surface of the resonator unit can be changed by controlling the frequency of the microwave supplied to the treatment chamber. This makes it possible to control the standing wave distribution within the treatment chamber, that is, the microwave energy distribution within the treatment chamber. As a result, in the cases where a plurality of heating targets need to be heated simultaneously, desired dielectric heating is conducted for each of the heating targets.
1. A microwave treatment apparatus comprising:
a treatment chamber surrounded by a plurality of walls and configured to accommodate a first heating target and a second heating target;
a microwave supply configured to supply a microwave to the treatment chamber; and
a resonator unit provided on one wall of the plurality of walls and having a resonance frequency in a frequency band of the microwave,
wherein the microwave supply includes:
a microwave generator configured to generate the microwave; and
a controller configured to control the microwave generator to adjust an oscillation frequency of the microwave, and
wherein the controller is configured to change the oscillation frequency according to an arrangement of the first heating target and the second heating target so as to simultaneously control heating of both the first heating target and the second heating target.
2. The microwave treatment apparatus according to claim 1 , wherein the resonator unit includes one or more patch resonators.
3. The microwave treatment apparatus according to claim 2 , wherein the one or more patch resonators are arranged so that a patch surface faces inside of the treatment chamber, and an opposite surface to the patch surface has a potential equal to a potential of the one wall of the treatment chamber.
4. The microwave treatment apparatus according to claim 2 , wherein the one or more patch resonators are arranged in a matrix.
5. The microwave treatment apparatus according to claim 2 , wherein all of the one or more patch resonators are provided on one wall of the plurality of walls.
6. The microwave treatment apparatus according to claim 5 , wherein the resonator unit is disposed in one of equally divided regions in which one wall of the plurality of walls is equally divided.
7. The microwave treatment apparatus according to claim 1 , wherein:
the microwave supply includes a power feeder provided in one wall of the plurality of walls and configured to supply the microwave to the treatment chamber; and
the resonator unit is disposed on another one of the walls that is opposite to the power feeder.
8. The microwave treatment apparatus according to claim 1 , wherein the controller is configured to change the oscillation frequency in a range from 2.40 GHz to 2.50 GHz, inclusive, according to the arrangement of the first heating target and the second heating target.
9. The microwave treatment apparatus according to claim 1 , wherein the controller is configured to change the oscillation frequency such that the first heating target is heated more intensively than the second heating target.
10. The microwave treatment apparatus according to claim 1 , wherein the controller is configured to change the oscillation frequency such that the first heating target and the second heating target are heated evenly.
11. The microwave treatment apparatus according to claim 1 , wherein the resonator unit includes only one patch resonator.