Sensor semiconductor device
A sensor semiconductor device comprises a transducer which comprises a capacitor with at least two electrodes. The transducer further comprises a polymer which is arranged between at least two electrodes of the capacitor, and a top surface of the transducer. The polymer is able to absorb water and the top surface is arranged such that it is exposed to the environment of the sensor semiconductor device. Furthermore, at least a part of the top surface is superhydrophobic and the sensor semiconductor device is capable of measuring the humidity of the environment of the sensor semiconductor device.
1. A sensor semiconductor device comprising:
a transducer comprising:
a capacitor with at least two electrodes,
a polymer arranged between the at least two electrodes of the capacitor, and
a top layer of the transducer with a top surface,
wherein the polymer is able to absorb water,
wherein the top surface is arranged such that it is exposed to an environment of the sensor semiconductor device,
wherein at least a part of the top surface is superhydrophobic as a result of structures extending into the top layer,
wherein a size of the structures is at least 1 μm and at most 100 μm in lateral directions which are parallel to a main plane of extension of the transducer,
wherein an angle between the top surface and the structures at the top surface is less than 90°,
wherein the structures have an undercut as a result of the angle of less than 90°, and
wherein the sensor semiconductor device is capable of measuring humidity of the environment of the sensor semiconductor device.
2. The sensor semiconductor device according to claim 1 , wherein the capacitor is a plate capacitor.
3. The sensor semiconductor device according to claim 1 , wherein the capacitor is a fringe capacitor.
4. The sensor semiconductor device according to claim 1 , wherein a trench is arranged around the transducer, the trench configured to provide drainage of a liquid from the top surface.
5. The sensor semiconductor device according to claim 1 , wherein structures are patterned within the top surface by photolithography, and wherein the size of the structures is at least 1 nm and at most 1 μm in vertical direction, which is perpendicular to the main plane of extension of the transducer.
6. The sensor semiconductor device according to claim 1 , wherein the top surface is a surface of the polymer.
7. A method for producing a sensor semiconductor device, the method comprising:
forming a transducer comprising a capacitor with at least two electrodes;
arranging a polymer between the at least two electrodes of the capacitor; and
structuring a top layer of the transducer such that a top surface of the top layer is at least partially superhydrophobic as a result of structures extending into the top layer,
wherein the polymer is able to absorb water,
wherein the top surface is arranged such that it is exposed to an environment of the sensor semiconductor device,
wherein a size of the structures is at least 1 nm and at most 100 μm in lateral directions which are parallel to a main plane of extension of the transducer,
wherein an angle between the top surface and the structures at the top surface is less than 90°,
wherein the structures have an undercut as a result of the angle of less than 90°, and
wherein the sensor semiconductor device is capable of measuring humidity of the environment of the sensor semiconductor device.
8. The method according to claim 7 , wherein the top layer is comprised by the polymer.
9. The method according to claim 7 , wherein an electrode of the capacitor comprises the top layer.
10. The method according to claim 7 , wherein the top layer is comprised neither by the polymer nor by an electrode of the capacitor.
11. The method according to claim 7 , wherein the capacitor is a plate capacitor.
12. The method according to claim 7 , wherein the capacitor is a fringe capacitor.
13. The method according to claim 7 , wherein a trench is arranged around the transducer, the trench providing drainage of a liquid from the top surface.
14. The method according to claim 7 , wherein structuring the top layer comprises patterning.
15. The method according to claim 7 , wherein the top surface is a surface of the polymer.
16. The method according to claim 7 , wherein structuring the top layer comprises roughening.
17. The method according to claim 7 , wherein structuring the top layer comprises providing a chemical treatment.
18. The method according to claim 7 , wherein structuring the top layer comprises etching.
19. The method according to claim 7 , wherein structuring the top layer comprises providing ultra violet light exposure.
20. The method according to claim 7 , wherein structuring the top layer comprises growing nanostructured metal layers.
21. The method according to claim 7 , wherein, prior to structuring, the top layer is a homogenous non-fiber layer.