Semiconductor laser device
View Patent ↗In a semiconductor laser device that includes: a semiconductor laser element that outputs light from an output portion; and a metal stem that holds the semiconductor laser element, the metal stem includes a base that has a reference surface on an upper surface and a protrusion portion that protrudes upward from the reference surface, and the protrusion portion is provided with an installation surface on which the semiconductor laser element is installed and a side surface which is disposed on an identical plane with a part of an outer circumferential surface of the base.
1. A semiconductor laser device comprising: a semiconductor laser element that outputs light from an output portion; and a metal stem that holds the semiconductor laser element, wherein the metal stem includes: a base that has a reference surface on an upper surface and a plurality of notches on an outer circumferential surface of the base; and a protrusion portion that is bonded to, and protrudes upward from, the reference surface, the protrusion portion has an installation surface on which the semiconductor laser element is installed and a side surface which is disposed on an identical plane with a part of the outer circumferential surface, and upper sides of the notches are covered by the protrusion portion.
2. The semiconductor laser device according to claim 1 , wherein an upper side of the semiconductor laser element is open.
3. The semiconductor laser device according to claim 1 , wherein the base is formed into a columnar shape.
4. The semiconductor laser device according to claim 1 , wherein a part of the side surface of the protrusion portion and the part of the outer circumferential surface of the base are formed of a plane parallel to the installation surface.
5. The semiconductor laser device according to claim 1 , wherein an exclusive possession area of the protrusion portion on the reference surface is 50% or more.
6. The semiconductor laser device according to claim 1 , wherein the metal stem includes a pair of leads that is connected to the semiconductor laser element by penetrating the base, the base is formed to be substantially line symmetric with a center line that is parallel to the installation surface in top view, the protrusion portion is installed over a first region and a second region that are obtained by division by the center line, the installation surface and the leads are disposed only in the first region, and the side surface of the protrusion portion is disposed on a circumferential edge of the second region.
7. The semiconductor laser device according to claim 6 , wherein centers of the leads and the output portion are disposed on a straight line in top view.
8. The semiconductor laser device according to claim 1 , wherein materials of the base and the protrusion portion are formed of copper-based metal.
9. The semiconductor laser device according to claim 1 , wherein the semiconductor laser element is disposed on the installation surface via a sub-mount, and the sub-mount is formed of a material of AlN or SiC.
10. The semiconductor laser device according to claim 1 , wherein the semiconductor laser element includes a GaAs-based substrate and outputs red light.
11. The semiconductor laser device according to claim 1 , wherein the semiconductor laser element includes a GaN-based substrate and outputs green light.