Apparatus and method for patterned processing
An apparatus for patterned processing includes a source of input gas, a source of energy suitable for generating a plasma from the input gas in a plasma region and a grounded sample holder configured for receiving a solid sample. The apparatus includes a mask arranged between the plasma region and the grounded sample holder, the mask having a first face oriented toward the plasma region and a second face oriented toward a surface of the solid sample to be processed, the mask including a mask opening extending from the first face to the second face, and an electrical power supply adapted for applying a direct-current bias voltage to the mask, and the mask opening being dimensioned and shaped so as to generate spatially selective patterned processing on the surface of the solid sample.
1. An apparatus for patterned processing comprising:
a source of input gas;
a source of energy configured to excite the input gas and to generate a plasma in a plasma region;
a grounded sample holder configured to receive a solid sample;
a mask disposed between the plasma region and the grounded sample holder, the mask having a first face oriented toward the plasma region and a second face oriented toward a surface of the solid sample to be processed, the second face comprising an electrically insulating part in contact with the surface of the solid sample to be processed, the mask comprising
at least one mask opening extending through the mask from the first face to the second face,
at least one electrically conductive part on the first face and partially or fully covering the side walls of the at least one mask opening; and
an electrical power supply configured to apply a direct-current non-null bias voltage to the mask, the mask being disposed in contact with the surface of the solid sample as to prevent plasma generation between the mask and the solid sample, said at least one mask opening being dimensioned and shaped to generate spatially selective patterned processing by selecting and focusing ions from the plasma on the surface of the solid sample.
2. The apparatus according to claim 1 , wherein the at least one mask opening has an opening width ranging in the sub-millimeter to millimeter range taken along a first direction parallel to the second face of the mask, the at least one mask opening having an opening height in another direction taken transversely to the second face of the mask, defining an aspect ratio of the opening height over the opening width, the aspect ratio is being larger than 1.
3. The apparatus according to claim 1 , wherein the at least one mask opening has a conical or cylindrical shape or a shape configured to generate a pattern with determined spatial profile on the surface of the substrate.
4. The apparatus according to claim 1 , wherein the at least one mask opening comprises a plurality of mask openings disposed in a one-dimension or two-dimension periodic array.
5. The apparatus according to claim 1 , wherein the mask is made of an electrically conductive material, and the mask is disposed at a non-null distance from the surface of the solid sample.
6. The apparatus according to claim 5 , wherein the mask comprises a first conductive part, and a second conductive part electrically isolated from the first conductive part, the first conductive part comprising a first-type mask opening, and the second conductive part comprising a second-type mask opening,
wherein the electrical power supply is configured to apply a first direct-current bias voltage to the first conductive part and to apply a second direct-current bias voltage to the second conductive part.
7. The apparatus according to claim 1 , wherein the mask comprises a first conductive part, and a second conductive part electrically isolated from the first conductive part, the first conductive part comprising a first-type mask opening, and the second conductive part comprising a second-type mask opening,
wherein the electrical power supply is configured to apply a first direct-current bias voltage to the first conductive part and to apply a second direct-current bias voltage to the second conductive part.
8. The apparatus according to claim 7 , wherein the first direct-current bias voltage and the second direct-current bias voltage have opposite polarities at a same instant.
9. The apparatus according to claim 1 , wherein the source of energy comprises one of:
(i) another electric power supply connected to a planar electrode disposed parallel to the sample holder and configured to generate a capacitively-coupled plasma,
(ii) another electric power supply connected to a coil electrode configured to generate an inductively-coupled plasma, and
(iii) one or more of:
a microwave antenna coupled to the plasma generation chamber via waveguides and configured to generate a microwave plasma, and
a magnetic field generation system configured to generate a magnetic field in the plasma region.
10. The apparatus according to claim 2 , wherein the at least one mask opening has a conical or cylindrical shape or a shape configured to generate a pattern with determined spatial profile on the surface of the substrate.
11. The apparatus according to claim 2 , wherein the at least one mask opening comprises a plurality of mask openings disposed in a one-dimension or two-dimension periodic array.
12. The apparatus according to claim 3 , wherein the at least one mask opening comprises a plurality of mask openings disposed in a one-dimension or two-dimension periodic array.
13. A method for patterning a solid sample, the method comprising:
disposing a solid sample on a grounded sample holder of an apparatus for plasma processing;
disposing a mask between the grounded sample holder and a plasma region of the apparatus for plasma processing, the mask having a first face, a second face, and at least one mask opening extending through the mask from the first face to the second face, the first face being oriented toward the plasma region and the second face being oriented toward a surface of the solid sample to be processed, the second face comprising an electrically insulating part in contact with the surface of the solid sample to be processed, the mask comprising at least one electrically conductive part on the first face and partially or fully covering the side walls of the at least one mask opening;
injecting an input gas in the plasma region of the apparatus for plasma processing;
applying an energy configured to excite the input gas and to generate a plasma in the plasma region; and
applying a non-null direct-current bias voltage to the mask, the mask being disposed in contact with the surface of the solid sample to prevent plasma generation between the mask and the solid sample, said at least one mask opening being dimensioned and shaped to generate spatially selective patterned processing by selecting and focusing ions from the plasma on the surface of the solid sample.
14. The method according to claim 13 , wherein a distance between the mask and the surface of the solid sample is adjusted to generate patterned features having one or more of determined size and profile.
15. The method according to claim 13 , wherein the mask further comprises a first conductive part, and a second conductive part electrically isolated from the first conductive part, the first conductive part comprising a first-type mask opening, the second conductive part comprising a second-type mask opening, and
the method further comprises:
injecting a first input gas into the plasma region, applying a first direct-current bias voltage to the first conductive part and applying a second direct-current bias voltage to the second conductive part to generate a first-type patterned processing on the surface of the solid sample by selecting and focusing a first type of ions from the plasma through the first-type mask opening; and
injecting another input gas into the plasma region, applying a third direct-current bias voltage to the first conductive part and applying a fourth direct-current bias voltage to the second conductive part to generate a second-type patterned processing on the surface of the solid sample by selecting and focusing another type of ions from the plasma through the second-type mask opening.
16. The method according to claim 13 , wherein the method is performed for manufacture of one of a solar cell, a semiconducting device, and an optoelectronic device.
17. The method according to claim 13 , wherein the input gas and the direct-current bias voltage are selected to generate, on the surface of the solid sample, one or more of respectively patterned layer deposition, patterned etching, patterned ion bombardment, patterned doping, patterned cleaning, patterned densification, and patterned surface functionalization.
18. The method according to claim 13 , wherein the direct-current bias voltage is positive during one processing operation and, respectively, negative during another processing operation.
19. The method according to claim 13 , wherein the direct-current bias voltage is adjusted in amplitude to generate spatially selective patterned features having one or more of determined size and profile.