Saw device with suppressed spurious mode signals
For a multilayer SAW device arranged on a carrier substrate it is proposed to use a specific material for the carrier substrate. If a silicon material having a selected range of Euler angles is used as a material for the carrier substrat improved suppression of disturbing signals is achieved.
1. A surface acoustic wave (SAW) device, comprising:
a carrier substrate comprising a crystalline silicon with a crystal cut according to Euler angles of (45°±10°, 54°±10°, 0°±10°);
a piezoelectric layer arranged on top of the carrier substrate; and
an interdigital transducer (IDT) electrode arranged on top of the piezoelectric layer.
2. The SAW device of claim 1 , wherein the crystal cut according to Euler angles of (45°±10°, 54°±10°, 0°±10°) is such that wave energy of a spurious mode is radiated predominantly within the carrier substrate while wave energy of a main mode is localized near a top surface of the piezoelectric layer.
3. The SAW device of claim 1 , wherein a high acoustic velocity layer is arranged between the carrier substrate and the piezoelectric layer, wherein the acoustic velocity in the high acoustic velocity layer is higher than in the carrier substrate.
4. The SAW device of claim 3 , wherein the high acoustic velocity layer has a thickness of x2 according to 0.05λ<x2<λ wherein λ is the wavelength of a main mode of the surface acoustic wave device.
5. The SAW device of claim 3 , wherein the high acoustic velocity layer comprises polycrystalline silicon.
6. The SAW device of claim 3 , further comprising a temperature coefficient of frequency (TCF) compensating layer having a positive TCF and being arranged between the high acoustic velocity layer and the piezoelectric layer.
7. The SAW device of claim 6 , wherein the TCF compensating layer comprises SiO 2 , Fluorine doped SiO 2 or other doped SiO 2 based materials.
8. The SAW device of claim 6 , wherein the TCF compensating layer has a thickness of x3 according to 0.05λ<x3<λ.
9. The SAW device of claim 1 , further comprising a temperature coefficient of frequency (TCF) compensating layer having a positive TCF and being arranged above the IDT electrode.
10. The SAW device of claim 9 , wherein the TCF compensating layer comprises SiO 2 , Fluorine doped SiO 2 or other doped SiO 2 based materials.
11. The SAW device of claim 9 , wherein the TCF compensating layer has a thickness of x3 according to 0.05λ<x3<λ.
12. The SAW device of claim 1 , wherein the piezoelectric layer has a thickness of x4 according to 0.1λ<x4<λ.
13. The SAW device of claim 1 , wherein the IDT electrode comprises a multilayer structure comprising aluminium.
14. The SAW device of claim 1 , wherein the IDT electrode has a thickness of x5 according to 0.05λ<x5<0.2λ.