Organic electroluminescent diode and manufacturing method thereof, display panel and display device
An organic electroluminescent diode, a display panel, a display device and a manufacturing method of an organic electroluminescent diode are provided. The organic electroluminescent diode includes a first electrode, a first electron blocking layer, a light-emitting layer and a second electrode which are stacked arranged in sequence, a surface of the first electron blocking layer in contact with the light-emitting layer is doped with a hole-type non-metallic material. In the embodiment of the present disclosure, by doping the hole-type non-metallic material in the first electron blocking layer, the density of the holes at the recombination interface is increased, the utilization rate of the holes is improved, and the loss of holes in the transmission process is avoided, which ensures that the holes are timely recombined with the transmitted electrons, and avoids the accumulation of too many electrons at the interface between the first electron blocking layer and the light-emitting layer.
1. An organic electroluminescent diode, comprising: a first electrode, a first electron blocking layer, a light-emitting layer and a second electrode which are stacked arranged in sequence, wherein only a surface of the first electron blocking layer in contact with the light-emitting layer is doped with a hole-type non-metallic material, and a surface of the first electron blocking layer away from the light-emitting layer is not doped with the hole-type non-metallic material.
2. The organic electroluminescent diode according to claim 1 , wherein the hole-type non-metallic material comprises at least one selected from a group consisting of 4,4′,4″-tris(N-3-methylphenyl-N-phenylamino)-triphenylamine (m-MTADATA) and tris(2-phenylpyridine) Iridium (Ir(ppy) 3 ).
3. The organic electroluminescent diode according to claim 1 , wherein a mass percentage of the hole-type non-metallic material in the first electron blocking layer ranges from about 0.5% to 10%.
4. The organic electroluminescent diode according to claim 3 , wherein the mass percentage of the hole-type non-metallic material in the first electron blocking layer ranges from about 1% to 5%.
5. The organic electroluminescent diode according to claim 1 , wherein a host material of the first electron blocking layer comprises at least one selected from a group consisting of N,N′-bis(3-methylphenyl)-N,N′-diphenyl-4,4′-biphenyldiamine, 4,4′,4″-tris(carbazol-9-yl)triphenylamine and N,N′-(1-naphthyl)-N,N′-diphenyl-4,4′-biphenyldiamine.
6. The organic electroluminescent diode according to claim 1 , further comprising a hole transport layer, wherein the first electron blocking layer is arranged between the light-emitting layer and the hole transport layer.
7. The organic electroluminescent diode according to claim 6 , further comprising: a hole injection layer arranged between the first electrode and the hole transport layer; an electron transport layer arranged between the light-emitting layer and the second electrode; and an electron injection layer arranged between the electron transport layer and the second electrode.
8. The organic electroluminescent diode according to claim 6 , further comprising: a second electron blocking layer arranged between the first electron blocking layer and the hole transport layer.
9. The organic electroluminescent diode according to claim 8 , wherein a material of the second electron blocking layer is same as a host material of the first electron blocking layer.
10. A display panel, comprising the organic electroluminescent diode according to claim 1 .
11. A display device, comprising the display panel according to claim 10 .
12. A manufacturing method of an organic electroluminescent diode, comprising:
forming a first electrode, a first electron blocking layer, a light-emitting layer and a second electrode, wherein only a surface of the first electron blocking layer in contact with the light-emitting layer is doped with a hole-type non-metallic material, and a surface of the first electron blocking layer away from the light-emitting layer is not doped with the hole-type non-metallic material.
13. The manufacturing method according to claim 12 , wherein the hole-type non-metallic material comprises at least one selected from a group consisting of 4,4′,4″-tris(N-3-methylphenyl-N-phenylamino)-triphenylamine (m-MTADATA) and tris(2-phenylpyridine) Iridium (Ir(ppy) 3 ).
14. The manufacturing method according to claim 12 , further comprising: forming a hole transport layer between the first electrode and the first electron blocking layer; forming a hole injection layer between the first electrode and the hole transport layer; forming an electron transport layer between the light-emitting layer and the second electrode; and forming an electron injection layer between the electron transport layer and the second electrode.
15. The manufacturing method according to claim 14 , further comprising: forming a second electron blocking layer between the first electron blocking layer and the hole transport layer.
16. The manufacturing method according to claim 15 , wherein all of the first electron blocking layer, the second electron blocking layer and the light-emitting layer are formed by an evaporation method.