LED filament

1. An LED filament comprising:

a carrier composed of a material transparent to electromagnetic radiation;

two electrical terminals located on the carrier; and

at least two radiation-emitting semiconductor chips arranged on the carrier,

wherein the semiconductor chips are connected in electrically conductive manner to the electrical terminals,

wherein the carrier comprises a receptacle space, the receptacle space being delimited by a basal area of the carrier, by a first side wall and a second opposite side wall of the carrier and by a third sidewall and a fourth opposite side wall of the carrier and by, wherein the side walls extend from the basal area in a y-direction,

wherein a basal region of the carrier comprises a partition, the partition extending from the basal area of the carrier in the y-direction, wherein the partition extends from the first side wall to the second side wall of the carrier along a z-direction, wherein the partition divides the receptacle space along a x-axis in two receptacle regions, and wherein at least one of the semiconductor chips is arranged on the basal area of the carrier in each receptacle region,

wherein undersides of the semiconductor chips are connected by way of an adhesive layer to the basal area of the carrier,

wherein the adhesive layers comprise a first conversion material,

wherein the first conversion material is configured to shift at least a portion of a wavelength of radiation from the semiconductor chips,

wherein the semiconductor chips comprise conversion layers on upper sides and on lateral areas,

wherein the conversion layers are configured to shift at least a portion of the wavelength of the radiation from the semiconductor chips,

wherein a transparent matrix material mixed with a second conversion material covers the semiconductor chips, and

wherein sedimented conversion layers with an increased concentration of the second conversion material cover the upper sides and the lateral areas of the semiconductor chips.

2. The LED filament according to claim 1 , wherein the partition terminates along the y-direction above heights of the upper sides of the semiconductor chips.

3. The LED filament according to claim 1 , wherein the lateral areas of the receptacle regions incline outwardly.

4. The LED filament according to claim 1 , wherein the semiconductor chips are connected by way of bonding wires in electrically conductive manner to one another and to the electrical terminals, and wherein the matrix material covers the bonding wires and the partition.

5. The LED filament according to claim 1 , wherein the carrier with the side walls and the partition is composed of a molding material.

6. The LED filament according to claim 1 , wherein the electrical terminals are composed of metal strips embedded into the carrier.

7. A method for producing the LED filament according to claim 1 , the method comprising:

providing the carrier with the two electrical terminals;

applying the adhesive layer on the carrier at least in two sections, wherein the adhesive layer comprises the first conversion material;

placing the radiation-emitting semiconductor chips directly onto the adhesive layer of the two sections, wherein the undersides of the semiconductor chips are directly connected by the adhesive layer to the carrier;

connecting the semiconductor chips by way of electrical lines to the electrical terminals; and

applying the matrix material comprising the second conversion material to the semiconductor chips, wherein the second conversion material is deposited on the upper sides and the lateral areas of the semiconductor chips forming the conversion layers, and wherein the matrix material is transparent to the electromagnetic radiation.

8. The method according to claim 7 , wherein the carrier is composed of a molding material, and wherein the carrier is molded onto the electrical terminals.

9. The method according to claim 8 , wherein the electrical terminals are constituents of a leadframe, wherein the carrier made of the molding material is molded onto the constituents, and wherein the constituents are then separated from the leadframe.

10. The method according to claim 9 , wherein, before separating the constituents from the leadframe, checking functionalities of the semiconductor chips interconnected between the electrical terminals, and separating only the electrical terminals of viable arrangements of semiconductor chips from the leadframe.

11. The LED filament of claim 1 , wherein the partition extends from the basal area less in the y-direction than the side walls of the carrier.

12. The LED filament of claim 1 , wherein the receptacle regions are at least partly filled with the transparent matrix material mixed with the second conversion material up to a predetermined height along the y-direction.

13. An LED filament comprising:

a carrier composed of a material transparent to electromagnetic radiation;

two electrical terminals on the carrier; and

at least two radiation-emitting semiconductor chips arranged on the carrier,

wherein the semiconductor chips are connected in electrically conductive manner to the electrical terminals,

wherein the carrier comprises a receptacle space, the receptacle space being delimited by a basal area of the carrier, by a first side wall and a second opposite side wall of the carrier and by a third sidewall and a fourth opposite side wall of the carrier and by, wherein the side walls extend from the basal area in a y-direction,

wherein a basal region of the carrier comprises a partition, the partition extending from the basal area of the carrier in the y-direction, wherein the partition extends from the first side wall to the second side wall of the carrier along a z-direction, wherein the partition divides the receptacle space along a x-axis in two receptacle regions, and wherein at least one of the semiconductor chips is arranged on the basal area of the carrier in each receptacle region,

wherein undersides of the semiconductor chips are connected by way of an adhesive layer to the basal area of the carrier,

wherein the adhesive layers comprise a first conversion material,

wherein the first conversion material is configured to shift at least a portion of a wavelength of a radiation from the semiconductor chip,

wherein the semiconductor chips comprise a conversion layer on upper sides and on lateral areas, and

wherein the conversion layers are configured to shift at least a portion of the wavelength of the radiation from the semiconductor chips.

14. The LED filament according to claim 13 , wherein the partition extends less in the y-direction than the side walls of the carrier.

15. The LED filament according to claim 14 , wherein the partition terminates along the y-direction above the upper sides of the semiconductor chips.

16. The LED filament according to claim 13 , wherein the lateral areas of the receptacle regions incline outwardly.

17. A method for producing an LED filament, wherein the LED filament comprises a carrier composed of a material transparent to electromagnetic radiation, two electrical terminals located on the carrier and at least two radiation-emitting semiconductor chips arranged on the carrier, wherein the semiconductor chips are connected in electrically conductive manner to the electrical terminals, wherein undersides of the semiconductor chips are connected by way of an adhesive layer to the carrier, wherein the adhesive layers comprise a first conversion material, wherein the first conversion material is configured to shift at least a portion of a wavelength of radiation from the semiconductor chips, wherein the semiconductor chips comprise conversion layers on upper sides and on lateral areas, wherein the conversion layers are configured to shift at least a portion of the wavelength of the radiation from the semiconductor chips, wherein a transparent matrix material mixed with a second conversion material covers the semiconductor chips, and wherein sedimented conversion layers with an increased concentration of the second conversion material cover the upper sides and the lateral areas of the semiconductor chips, the method comprising:

providing the carrier with the two electrical terminals;

applying the adhesive layer on the carrier at least in two sections, wherein the adhesive layer comprises the first conversion material;

placing the radiation-emitting semiconductor chips onto the adhesive layer of the two sections, wherein the undersides of the semiconductor chips are connected by the adhesive layer to the carrier;

connecting the semiconductor chips by way of electrical lines to the electrical terminals; and

applying the matrix material comprising the second conversion material to the semiconductor chips, wherein the second conversion material is deposited on the upper sides and the lateral areas of the semiconductor chips forming the conversion layer, and wherein the matrix material is transparent to the electromagnetic radiation,

wherein the carrier is composed of a molding material,

wherein the carrier is molded onto the electrical terminals,

wherein the electrical terminals are constituents of a leadframe,

wherein the carrier made of the molding material is molded onto the constituents,

wherein the constituents are then separated from the leadframe,

wherein, before separating the constituents from the leadframe, checking functionalities of the semiconductor chips interconnected between the electrical terminals, and

separating only the electrical terminals of viable arrangements of semiconductor chips from the leadframe.