Light-emitting diode chip, and method for manufacturing a light-emitting diode chip
A light-emitting diode chip that includes an epitaxial semiconductor layer sequence having an active region that generates electromagnetic radiation during operation, and a passivation layer comprising magnesium oxide and magnesium nitride. The passivation layer may be applied to a lateral surface of the semiconductor layer sequence, and the passivation layer covering at least the active region.
1. A light-emitting diode chip comprising:
an epitaxial semiconductor layer sequence comprising an active zone; wherein the epitaxial semiconductor layer sequence comprises a III/V compound semiconductor material comprising nitrides that are present on an interface of the epitaxial semiconductor layer sequence and the passivation layer; wherein the epitaxial semiconductor layer sequence generates electromagnetic radiation during operation; and
a passivation layer comprising magnesium oxide and magnesium nitride; wherein the passivation layer is applied on a side surface of the semiconductor layer sequence and the passivation layer covers at least the active zone, the passivation layer comprising magnesium oxide and magnesium nitride having a common interface with the epitaxial semiconductor layer sequence.
2. The light-emitting diode chip as claimed in claim 1 , wherein the III/V compound semiconductor material comprises a phosphide compound semiconductor material.
3. The light-emitting diode chip as claimed in claim 2 , wherein the phosphide compound semiconductor material comprises In x Al y Ga 1-x-y P with 0≤x≤1, 0≤y≤1 and x+y≤1.
4. The light-emitting diode chip as claimed in claim 3 , wherein the semiconductor layer sequence comprises indium-nitrogen bonds, aluminum-nitrogen bonds, phosphorus-nitrogen bonds, gallium-nitrogen bonds, or combinations thereof on the interface with the passivation layer.
5. The light-emitting diode chip as claimed in claim 1 , wherein the passivation layer has a layer thickness ranging from 1 nm inclusive to 1000 nm inclusive.
6. The light-emitting diode chip as claimed in claim 1 , wherein
an edge length of the light-emitting diode chip does not exceed 500 μm.
7. The light-emitting diode chip as claimed in claim 1 , further comprising a protective layer comprising silicon nitride; wherein the protective layer is arranged over the passivation layer.
8. A method for producing a light-emitting diode chip, comprising:
providing an epitaxial semiconductor layer sequence having an active zone, which is suitable for generating electromagnetic radiation;
applying a layer comprising magnesium nitride onto a side surface of the semiconductor layer sequence, the magnesium nitride being applied in direct contact onto the side surface of the semiconductor layer sequence;
heat-treating a compound of the semiconductor layer sequence and the layer comprising magnesium nitride, to form a passivation layer comprising magnesium oxide and magnesium nitride.
9. The method as claimed in claim 8 ,
wherein the epitaxial semiconductor layer sequence comprises a phosphide compound semiconductor material In x Al y Ga 1-x-y P with 0≤x≤1, 0≤y≤1 and x+y≤1, and indium-nitrogen bonds, phosphorus-nitrogen bonds, aluminum-nitrogen bonds, gallium-nitrogen bonds, or combinations thereof are formed on the interface between the semiconductor layer sequence and the passivation layer.
10. The method as claimed in claim 8 ,
further comprising producing the side surface of the semiconductor layer sequence by etching.
11. The method as claimed in claim 8 ,
wherein the magnesium nitride is applied by sputtering.
12. The method as claimed in claim 8 ,
further comprising applying a protective layer onto the layer comprising magnesium nitride prior to forming the passivation layer.
13. A light-emitting diode chip comprising:
an epitaxial semiconductor layer sequence comprising an active zone; wherein the epitaxial semiconductor layer sequence comprises a III/V compound semiconductor material comprising a phosphide compound semiconductor material that is present on an interface of the epitaxial semiconductor layer sequence and the passivation layer; wherein the epitaxial semiconductor layer sequence generates electromagnetic radiation during operation; and
a passivation layer comprising magnesium oxide and magnesium nitride; wherein the passivation layer is applied on a side surface of the semiconductor layer sequence and the passivation layer covers at least the active zone, the passivation layer comprising magnesium oxide and magnesium nitride having a common interface with the epitaxial semiconductor layer sequence.
14. The light-emitting diode chip as claimed in claim 13 ,
wherein the phosphide compound semiconductor material comprises In x Al y Ga 1-x-y P with 0≤x≤1, 0≤y≤1 and x+y≤1.
15. The light-emitting diode chip as claimed in claim 13 ,
wherein the semiconductor layer sequence comprises indium-nitrogen bonds, aluminum-nitrogen bonds, phosphorus-nitrogen bonds, gallium-nitrogen bonds, or combinations thereof on the interface with the passivation layer.
16. The light-emitting diode chip as claimed in claim 13 ,
wherein the passivation layer has a layer thickness ranging from 1 nm inclusive to 1000 nm inclusive.
17. The light-emitting diode chip as claimed in claim 13 , wherein
an edge length of the light-emitting diode chip does not exceed 500 μm.
18. The light-emitting diode chip as claimed in claim 13 ,
further comprising a protective layer comprising silicon nitride; wherein the protective layer is arranged over the passivation layer.