Semiconductor device
Restraining a reduction in an electric current detection accuracy, which is due to the temperature difference between an output MOS transistor and a sense MOS transistor, and easing a limitation on the layout of the sense MOS transistor. A semiconductor device includes: an output MOS transistor that has an output transistor portion including a source, a gate, and a drain formed on a semiconductor chip, and outputs an electric current for driving an external load; and a sense MOS transistor that has a sense transistor portion including a source, a gate, and a drain formed on the semiconductor chip, and having a width equal to a transverse width of the output transistor portion, and that detects the electric current output from the output MOS transistor.
1. A semiconductor device comprising:
an output MOS transistor that has an output transistor portion including a source, a gate, and a drain formed on a semiconductor chip, and that outputs an electric current for driving an external load; and
a sense MOS transistor that has a sense transistor portion including a source, a gate, and a drain formed on the semiconductor chip, and having a width equal to a transverse width of the output transistor portion, and that detects the electric current output from the output MOS transistor,
wherein
the sense transistor portion is disposed longitudinally in line with the output transistor portion such that a transverse side of the output transistor portion and a side of the sense transistor portion, the side having a same width as the transverse width of the output transistor portion, are adjacent to each other,
and wherein
a plurality of the output transistor portions are provided, and
the sense transistor portion is disposed such that a side of the sense transistor portion, the side having a same width as the transverse width of the output transistor portion, is adjacent to a transverse side of either one of the output transistor portions.
2. The semiconductor device according to claim 1 , wherein
the sense MOS transistor is of a same unit structure as the output MOS transistor.
3. The semiconductor device according to claim 1 , wherein
the plurality of output transistor portions have longitudinal directions parallel to each other and are arrayed in transverse directions, and
the sense transistor portion is disposed longitudinally adjacent to one of the output transistor portions that is disposed on a transversely outermost side.
4. The semiconductor device according to claim 3 , wherein
the plurality of output transistor portions are disposed in a transverse array at spaced intervals each equal to or larger than the transverse width of the output transistor portions.
5. The semiconductor device according to claim 1 , wherein
each of the output transistor portion and the sense transistor portion has four sides surrounded by electrically insulative heat insulators.
6. A semiconductor device comprising:
an output MOS transistor that has an output transistor portion including a source, a gate, and a drain formed on a semiconductor chip, and that outputs an electric current for driving an external load; and
a sense MOS transistor that has a sense transistor portion including a source, a gate, and a drain formed on the semiconductor chip, and having a width equal to a transverse width of the output transistor portion, and that detects the electric current output from the output MOS transistor,
wherein
each of the output transistor portion and the sense transistor portion has four sides surrounded by electrically insulative heat insulators, and
wherein
two of the output transistor portions are disposed longitudinally in line with the output transistor portion in sandwiching relation to the sense transistor portion such that a transverse side of the output transistor portion and a side of the sense transistor portion, the side having a same width as the transverse width of the output transistor portion, are adjacent to each other.
7. The semiconductor device according to claim 1 , wherein
the output transistor portion has a transverse length equal to or smaller than ⅕ of a longitudinal length of the output transistor portion.