Functionally integrated coating structures
Techniques for depositing a functionally integrated coating structure on a substrate are provided. An example method according to the disclosure includes receiving the substrate into a process chamber of a multi-process ion beam assisted deposition system, disposing the substrate in a first zone including a first evaporator species and a first ion beam, wherein the first evaporator species is Aluminum Oxide (Al2O3), disposing the substrate in a second zone including a second evaporator species and a second ion beam, wherein the second evaporator species is Yttrium Oxide (Y2O3), and disposing the substrate in a third zone including a third evaporator species and a third ion beam, wherein the third evaporator species is Yttrium Fluoride (YF3).
1. A method of depositing a functionally integrated coating structure on a substrate, comprising:
receiving the substrate into a process chamber of a multi-process ion beam assisted deposition system;
disposing the substrate in a first zone including a first evaporator species and a first ion beam, wherein the first evaporator species is Aluminum Oxide (Al2O3) at a deposition rate of between 1 and 10 angstroms per second and the first ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;
disposing the substrate in a second zone including a second evaporator species and a second ion beam, wherein the second evaporator species is Yttrium Oxide (Y2O3) at a deposition rate of between 1 and 10 angstroms per second and the second ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;
disposing the substrate in a third zone including a third evaporator species and a third ion beam, wherein the third evaporator species is Yttrium Fluoride (YF3) at a deposition rate of between 1 and 10 angstroms per second and the third ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;
securing the second ion beam;
disposing a second shutter assembly over the second evaporator species, wherein the second shutter assembly is configured to inhibit the evaporation of the second evaporator species;
securing the third ion beam;
disposing a third shutter assembly over the third evaporator species, wherein the third shutter assembly is configured to inhibit the evaporation of the third evaporator species;
wherein disposing the substrate in the first zone, disposing the substrate in the second zone and disposing the substrate in the third zone includes orbiting the substrate for a plurality of consecutive orbits through each of the first zone, the second zone and the third zone;
activating the second ion beam;
disposing the second shutter assembly away from the second evaporator species, wherein the second shutter assembly does not inhibit the evaporation of the second evaporator species;
increasing the deposition rate in the second zone from zero angstroms per second to 1 to 10 angstroms per second, wherein the deposition rate in the second zone increases relative to the consecutive orbits of the substrate through the second zone;
decreasing the deposition rate in the first zone from 1 to 10 angstroms per second to less than 0.1 angstroms per second, wherein the deposition rate in the first zone decreases relative to the consecutive orbits of the substrate through the first zone;
securing the first ion beam; and
disposing a first shutter assembly over the first evaporator species, wherein the first shutter assembly is configured to inhibit the evaporation of the first evaporator species.
2. The method of claim 1 further comprising outputting the substrate from the process chamber of the multi-process ion beam assisted deposition system.
3. The method of claim 1 further comprising:
activating the third ion beam;
disposing the third shutter assembly away from the third evaporator species, wherein the third shutter assembly does not inhibit the evaporation of the third evaporator species;
increasing the deposition rate in the third zone from zero angstroms per second to 1 to 10 angstroms per second, wherein the deposition rate in the third zone increases relative to consecutive orbits of the substrate through the third zone;
decreasing the deposition rate in the second zone from 1 to 10 angstroms per second to less than 0.1 angstroms per second, wherein the deposition rate in the second zone decreases relative to consecutive orbits of the substrate through the second zone;
securing the second ion beam; and
disposing the second shutter assembly over the second evaporator species to inhibit the evaporation of the second evaporator species.
4. The method of claim 1 wherein the substrate is an electrostatic chuck for a plasma processing chamber.
5. The method of claim 1 further comprising providing an oxygen backfill gas to the process chamber.