IP Library Granted Patent US 11,417,452
Granted Patent B2
US 11,417,452 · App. 16/624,415 · Granted Aug 16, 2022

Electronic control unit

Inventors: Katsumi Ikegaya (Hitachinaka, JP); Keishi Komoriyama (Hitachinaka, JP); Yoshiaki Mizuhashi (Hitachinaka, JP); Takayuki Oshima (Hitachinaka, JP); Shinichirou Wada (Tokyo, JP)
Assignee: Hitachi Astemo, Ltd.
H01F7/1844G01R19/0069G01R31/08H01F7/18H01L29/7833H02H3/08H02H9/08
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Quick Facts
Patent No.
US 11,417,452
App. No.
16/624,415
Granted
Aug 16, 2022
Kind
B2
Abstract

An object is to provide a new electronic control unit that can improve detection accuracy of a sense current even in a region where the current value of the sense current is small. Provided is a sense current detection unit including a plurality of sense transistors that have different current flow rates and that are connected to current output transistors controlling a current flowing in a coil load. The current in the sense current detection unit is input to an analog/digital converter, and the current value of the current flowing in the sense current detection unit is converted into a digital value. The current value of the current flowing in the sense current detection unit is increased through a combination or a selection of the plurality of sense transistors of the sense current detection unit in a region where the current value of the main current of the current output transistors is small compared to a region where the current value of the main current is large.

Claims (33)

1. An electronic control unit comprising:

a sense current detection unit including a plurality of sense transistors that have different current flow rates and that are connected to a current output transistor that controls a current flowing in a coil load,

a sense current of the sense current detection unit being input to an analog/digital converter to convert a current value of the sense current flowing through the sense current detection unit into a digital value,

the sense current detection unit increasing the current value of the sense current flowing through the sense current detection unit through a combination or a selection of the plurality of sense transistors in a second region where a current value of a main current of the current output transistor is small compared to a first region where the current value of the main current is large, wherein

the plurality of sense transistors include at least a first sense transistor and a second sense transistor, and a current flow rate of the second sense transistor is set larger than a current flow rate of the first sense transistor,

in the first region where the current value of the main current is large, a current value of a sense current flowing through the first sense transistor is input to the analog/digital converter to convert the current value into a digital value,

in the second region where the current value of the main current is small, a current value of a combined sense current flowing through the first sense transistor and the second sense transistor is input to the analog/digital converter to convert the current value into a digital value, and

the current output transistor, the first sense transistor, and the second sense transistor are formed of MOSFETs, and current flow rates of the current output transistor, the first sense transistor, and the second sense transistor are each determined by a total gate width of each of the MOSFETs.

2. The electronic control unit according to claim 1 , wherein

the plurality of sense transistors include at least a first sense transistor and a second sense transistor, and a current flow rate of the second sense transistor is set larger than a current flow rate of the first sense transistor,

in the first region where the current value of the main current is large, the first sense transistor is selected for inputting a current value of a sense current flowing through the first sense transistor to the analog/digital converter to convert the current value into a digital value, and

in the second region where the current value of the main current is small, the second sense transistor is selected for inputting a current value of a sense current flowing through the second sense transistor to the analog/digital converter to convert the current value into a digital value.

3. The electronic control unit according to claim 1 , wherein

a gate of the first sense transistor is supplied with a same gate control signal as a gate control signal of the current output transistor,

the same gate control signal as the gate control signal of the current output transistor is input to a gate of the second sense transistor via a switch element, and

in the second region where the current value of the main current is small, the switch element is closed such that the same gate control signal as the gate control signal of the current output transistor is input to the gate of the second sense transistor.

4. The electronic control unit according to claim 3 , wherein,

switching of the switch element is executed in a period in which no gate control signal is input to the gate of the second sense transistor.

5. An electronic control unit comprising:

a sense current detection unit including a plurality of sense transistors that have different current flow rates and that are connected to a current output transistor that controls a current flowing in a coil load,

a sense current of the sense current detection unit being input to an analog/digital converter to convert a current value of the sense current flowing through the sense current detection unit into a digital value,

the sense current detection unit increasing the current value of the sense current flowing through the sense current detection unit through a combination or a selection of the plurality of sense transistors in a second region where a current value of a main current of the current output transistor is small compared to a first region where the current value of the main current is large;

the plurality of sense transistors includes at least a first sense transistor and a second sense transistor, and a current flow rate of the second sense transistor is set larger than a current flow rate of the first sense transistor,

in the first region where the current value of the main current is large, the first sense transistor is selected for inputting a current value of a sense current flowing through the first sense transistor to the analog/digital converter to convert the current value into a digital value,

in the second region where the current value of the main current is small, the second sense transistor is selected for inputting a current value of a sense current flowing through the second sense transistor to the analog/digital converter to convert the current value into a digital value; wherein

a same gate control signal as a gate control signal of the current output transistor is input to a gate of the first sense transistor via a first switch element,

the same gate control signal as the gate control signal of the current output transistor is input to a gate of the second sense transistor via a second switch element,

in the first region where the current value of the main current is large, the first switch element is closed while the second switch element being opened such that the same gate control signal as the gate control signal of the current output transistor is input to the gate of the first sense transistor, and

in the second region where the current value of the main current is small, the second switch element is closed while the first switch element being opened such that the same gate control signal as the gate control signal of the current output transistor is input to the gate of the second sense transistor.

6. The electronic control unit according to claim 5 , wherein

switching of each of the first switch element and the second switch element is executed in a period in which the gate control signal is input to neither the gate of the first sense transistor nor the gate of the second sense transistor.

7. The electronic control unit according to claim 1 , wherein

switching between the first region where the current value of the main current is large and the second region where the current value of the main current is small is performed based on whether the sense current flowing through the sense current detection unit exceeds a predetermined current threshold or based on a set current value that sets the main current flowing through the current output transistor.

Assignments (2)
CHANGE OF NAME Recorded Nov 30, 2021
From: HITACHI AUTOMOTIVE SYSTEMS, LTD.
To: HITACHI ASTEMO, LTD.
Reel/Frame 058481/0935 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 20, 2019
From: IKEGAYA, KATSUMI; KOMORIYAMA, KEISHI; MIZUHASHI, YOSHIAKI; OSHIMA, TAKAYUKI; WADA, SHINICHIROU
To: HITACHI AUTOMOTIVE SYSTEMS, LTD.
Reel/Frame 051346/0623 →