IP Library Granted Patent US 10,734,180
Granted Patent B2
US 10,734,180 · App. 16/625,931 · Granted Aug 4, 2020

Field emission cathode structure for a field emission arrangement

Inventors: Jonas Tirén (Uppsala, SE); Patrik Hollman (Uppsala, SE); Hilmi Volkan Demir (Singapore, SG); Vijay Kumar Sharma (Singapore, SG); Swee Tiam Tan (Singapore, SG)
Assignees: Lightlab Sweden AB; Nanyang Technological University
H01J1/304H01J1/48H01J29/94H01J2201/30469
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Quick Facts
Patent No.
US 10,734,180
App. No.
16/625,931
Granted
Aug 4, 2020
Kind
B2
Abstract

The present disclosure generally relates to field emission cathode structure for a field emission arrangement, specifically adapted for enhance reliability and prolong the lifetime of the field emission arrangement by arranging a getter element underneath a gas permeable portion of the field emission cathode structure. The present disclosure also relates to a field emission lighting arrangement comprising such a field emission cathode structure and to a field emission lighting system.

Claims (30)

1. A field emission cathode structure for a field emission arrangement, comprising:

a substrate having a first and a second side;

a getter element arranged on top of the first side of the substrate and covering a portion of the first side of the substrate;

an at least partly permeable structure arranged on top of at least a portion of the getter element; and

an electron emission source arranged to cover a portion of the at least partly permeable structure,

wherein the getter element is sandwiched between the substrate and the at least partly permeable structure.

2. The field emission cathode structure according to claim 1 , wherein the electron emission source comprises a plurality of nanostructures.

3. The field emission cathode structure according to claim 2 , wherein the plurality of nanostructures comprises at least one of ZnO nanostructures and carbon nanotubes.

4. The field emission cathode structure according to claim 3 , wherein the plurality of ZnO nanostructures is adapted to have a length of at least 1 um.

5. The field emission cathode structure according to claim 1 , wherein the at least partly permeable structure encapsulates the getter element.

6. The field emission cathode structure according to claim 1 , wherein the getter element is formed by arranging a layer of a getter material onto the portion of the substrate.

7. The field emission cathode structure according to claim 6 , wherein the getter material is non-evaporable getter material.

8. The field emission cathode structure according to claim 6 , wherein the getter material comprises at least one of tantalum (Ta), zirconium (Zr), titanium (Ti), hafnium (Hf), and/or their alloys.

9. The field emission cathode structure according to claim 6 , wherein a thickness of the layer of getter material is about 20-100 μm.

10. The field emission cathode structure according to claim 1 , wherein the substrate is planar.

11. The field emission cathode structure according to claim 10 , wherein the substrate is a wafer.

12. The field emission cathode structure according to claim 11 , wherein the wafer is a silicon wafer.

13. The field emission cathode structure according to claim 1 , wherein the getter element and the electron emission source are electrically connected.

14. The field emission cathode structure according to claim 1 , wherein the at least partly permeable structure is gas permeable.

15. The field emission cathode structure according to claim 1 , wherein the at least partly permeable structure is formed from a grid structure.

16. The field emission cathode structure according to claim 15 , wherein the grid structure is net shaped and the plurality of nanostructures are arrange onto bars comprised with the net shaped grid structure.

17. A field emission lighting arrangement, comprising:

an evacuated chamber;

a field emission cathode structure according to claim 1 , the field emission cathode arranged within the evacuated chamber;

an anode structure arranged within the evacuated chamber; and

a light emission member provided with an electron-excitable light emitting material, the light emission member arranged within the evacuated chamber,

wherein the getter element is adapted to be activated prior to operation of the field emission lighting arrangement.

18. The field emission lighting arrangement according to claim 17 , wherein a voltage level applied between the field emission cathode and the anode structure is selected to be between 5-15 kV.

19. The field emission lighting arrangement according to claim 17 , wherein the field emission lighting arrangement is formed as a lighting chip.

20. A field emission lighting system comprising a plurality of field emission lighting arrangements according to claim 17 .

Assignments (2)
CHANGE OF NAME Recorded Feb 3, 2023
From: LIGHTLAB SWEDEN AB
To: PUREFIZE TECHNOLOGIES AB
Reel/Frame 062658/0456 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 21, 2020
From: TIRÉN, JONAS; HOLLMAN, PATRIK; DEMIR, HILMO VOLKKAN; SHARMA, VIJAY KUMAR; TAN, SWEE TIAM
To: LIGHTLAB SWEDEN AB; NANYANG TECHNOLOGICAL UNIVERSITY
Reel/Frame 051571/0288 →
Priority Claims (1)
SE 1750878 · Jul 5, 2017 · national
Continuity (1)
Related Publication 20200161071A1 · May 21, 2020