Power semiconductor device having a distance regulation portion and power conversion apparatus including the same
A power semiconductor device includes a circuit body, first and second insulations, first and second bases, a case, and a distance regulation portion. The circuit body incudes a semiconductor element and a conductive portion. The first insulation and the second insulation oppose each other. The first base and second base also oppose each other. The case has a first opening portion covered with the first base and a second opening portion covered with the second base. The distance regulation portion has a first end that contacts the first base and a second end, that is opposite to the first end, and that contacts the second base. The distance regulation portion regulates a distance between the first base and the second base.
1. A power semiconductor device comprising:
a circuit body including a semiconductor element and a conductive portion;
a first insulation and a second insulation opposed to each other, the circuit body being interposed between the first insulation and the second insulation;
a first base and a second base opposed to each other, the circuit body, the first insulation, and the second insulation being interposed between the first base and the second base;
a case having a first opening portion covered with the first base and a second opening portion covered with the second base; and
a distance regulation portion having a first end that contacts the first base and a second end, that is opposite to the first end, and that contacts the second base, the distance regulation portion regulating a distance between the first base and the second base, wherein
a first distance is a distance from the first base to the second base in a region where the distance regulation portion is provided,
a second distance is a distance from a first connecting portion between the first base and the first opening to a second connecting portion between the second base and the second opening, and
the first distance is greater than the second distance.
2. The power semiconductor device according to claim 1 , wherein
the first insulation and the second insulation are respective ceramic substrates, and
the distance regulation portion protrudes from the ceramic substrates.
3. The power semiconductor device according to claim 1 , wherein
the protrusion has: a first protrusion formed at the first base, the first protrusion protruding to the second base; and a second protrusion formed at the second base, the second protrusion protruding to the first base, and
the first protrusion regulates the distance between the first base and the second base, in contact with the second protrusion.
4. The power semiconductor device according to claim 1 , wherein
the first base or the second base has a bent portion deformed to a side on which the case is disposed, the bent portion being in connection with the case.
5. The power semiconductor device according to claim 1 , wherein
the first base or the second base has a resin sealant embedded in space between the first base or the second base and the case.
6. A power semiconductor device comprising:
a circuit body including a semiconductor element and a conductive portion;
a first insulation and a second insulation opposed to each other, the circuit body being interposed between the first insulation and the second insulation;
a first base and a second base opposed to each other, the circuit body, the first insulation, and the second insulation being interposed between the first base and the second base;
a case having a first opening portion covered with the first base and a second opening portion covered with the second base; and
a distance regulation portion provided in space between the first base and the second base, the distance regulation portion regulating a distance between the first base and the second base in contact with the first base and the second base, wherein
the first insulation and the second insulation are respective ceramic substrates, and
the distance regulation portion protrudes from the ceramic substrates.
7. The power semiconductor device according to claim 6 , wherein
the protrusion has: a first protrusion formed at the first base, the first protrusion protruding to the second base; and a second protrusion formed at the second base, the second protrusion protruding to the first base, and
the first protrusion regulates the distance between the first base and the second base, in contact with the second protrusion.
8. The power semiconductor device according to claim 6 , wherein
the first base or the second base has a bent portion deformed to a side on which the case is disposed, the bent portion being in connection with the case.
9. The power semiconductor device according to claim 6 , wherein
the first base or the second base has a resin sealant embedded in space between the first base or the second base and the case.