Method for producing an optoelectronic component, and optoelectronic component

1. A method for manufacturing an optoelectronic component, the method comprising:

providing a carrier having a pedestal with a support surface;

applying a liquid joining material with filler particles to the support surface of the pedestal; and

applying a radiation emitting semiconductor chip with a mounting surface, which is larger than the support surface of the pedestal to the joining material such that the joining material forms a joining layer between the support surface of the pedestal and the mounting surface of the semiconductor chip and the joining material at least partially fills only a recess, which is limited by a part of the mounting surface projecting beyond the support surface,

wherein a portion of a surface of the carrier is covered with the joining material only below the mounting surface of the semiconductor chip while a remainder of the surface of the carrier remains free of the joining material, and

wherein the filler particles are diffusively reflective at least for an electromagnetic radiation of an active zone.

2. The method according to claim 1 , wherein the semiconductor chip is applied to the support surface by lowering such that the joining material completely wets the mounting surface of the semiconductor chip before filling the recess.

3. The method according to claim 1 , wherein the carrier comprises a lead frame.

4. The method according to claim 1 , wherein the semiconductor chip comprises an epitaxial semiconductor layer sequence having the active zone configured to generate the electromagnetic radiation of a first wavelength range and a substrate transparent for the electromagnetic radiation of the active zone.

5. The method according to claim 1 , wherein the joining layer has a thickness between 1 micrometers and 5 micrometers inclusive.

6. The method according to claim 1 , wherein the filler particles have a diameter between 150 nanometer and 250 nanometer inclusive.

7. The method according to claim 1 ,

wherein the surface of the carrier at least partially forms a bottom surface of a cavity, in which the semiconductor chip is arranged, and

wherein the cavity is filled with a casting, in which phosphor particles are introduced, which are configured to convert the radiation of a first wavelength range into radiation of a second wavelength range.

8. An optoelectronic component comprising:

a carrier comprising a pedestal having a supporting surface;

a radiation emitting semiconductor chip having a mounting surface larger than the support surface of the pedestal so that a recess is defined by a part of the mounting surface projecting beyond the support surface;

a joining layer comprising a joining material with filler particles and connecting the mounting surface of the semiconductor chip and the support surface of the pedestal to one another in a material-locking manner; and

an underfill formed from the joining material with the filler particles and arranged only in the recess while a region of a surface of the carrier, which projects beyond the mounting surface of the semiconductor chip is free of the underfill, and

wherein the filler particles are diffusively reflective at least for an electromagnetic radiation of an active zone.

9. The optoelectronic component according claim 8 , wherein side surfaces of the semiconductor chip are free of the joining material.

10. The optoelectronic component according to claim 8 , wherein the optoelectronic component is configured to emit warm white light.

11. The optoelectronic component according to claim 8 , wherein the carrier has a single pedestal and the semiconductor chip is applied centrally to the support surface of the pedestal so that the recess is formed completely circumferentially around the pedestal.

12. The optoelectronic component according to claim 8 , wherein the pedestal has a protrusion or an indentation delimited by the support surface.

13. The optoelectronic component according to claim 8 ,

wherein the semiconductor chip has two electrical contacts on a front side of the semiconductor chip, and

wherein the carrier has two pedestals, each pedestal is arranged below a corresponding electrical contact of the semiconductor chip.