Wafer-level methods for manufacturing uniform layers of material on optoelectronic modules
Wafer-level methods for manufacturing one or more uniform layers of material on one or more surfaces of a plurality of optoelectronic modules include assembling a wafer assembly, injecting a formable material into the wafer assembly, ejecting excess formable material form the wafer assembly, and hardening one or more formable material layers on one or more surfaces of the plurality of optoelectronic modules such that the hardened one or more formable material layers are the one or more uniform layers of material.
1. A wafer-level method for manufacturing a uniform layer of material, the method comprising:
assembling a wafer assembly, the wafer assembly including a chuck, a tool wafer, and a module wafer wherein the module wafer includes a plurality of optoelectronic modules;
injecting a formable material into the wafer assembly, such that one or more surfaces of the plurality of optoelectronic modules are coated with a formable material layer;
wherein injecting a formable material into the wafer assembly further includes rotating the wafer assembly;
ejecting excess formable material from the wafer assembly; and
hardening the formable material layer.
2. The wafer-level method of claim 1 wherein the wafer assembly includes a plurality of
quick-release foils, a plurality of quick-release protrusions, a quick-release substrate, transmissive portions, or any combination of the aforementioned.
3. The wafer-level method of claim 2 wherein injecting a formable material into the wafer assembly further includes applying a vacuum to the wafer assembly.
4. The wafer-level method of claim 2 wherein injecting a formable material into the wafer assembly further includes applying a vacuum to the wafer assembly.
5. The wafer-level method of claim 2 wherein ejecting excess formable material from the wafer assembly includes applying a vacuum to the wafer assembly.
6. The wafer-level method of claim 2 wherein ejecting excess formable material from the wafer assembly includes rotating the wafer assembly.
7. The wafer-level method of claim 2 wherein ejecting excess formable material from the wafer assembly includes applying a pressurized gas to the wafer assembly.
8. The wafer-level method of claim 2 wherein ejecting excess formable material from the wafer assembly includes applying a vacuum and/or pressurized gas to the wafer assembly and/or rotating the wafer assembly.
9. The wafer-level method of claim 5 wherein hardening the formable material layer includes hardening the formable material with reactive pressurized gas, hot pressurized gas, reactive and hot pressurized gas, radiation, or any combination of the aforementioned.
10. The wafer-level method of claim 6 wherein hardening the formable material layer includes hardening the formable material with reactive pressurized gas, hot pressurized gas, reactive and hot pressurized gas, radiation, or any combination of the aforementioned.
11. The wafer-level method of claim 7 wherein hardening the formable material layer includes hardening the formable material with reactive pressurized gas, hot pressurized gas, reactive and hot pressurized gas, radiation, or any combination of the aforementioned.
12. The wafer-level method of claim 8 wherein hardening the formable material layer includes hardening the formable material with reactive pressurized gas, hot pressurized gas, reactive and hot pressurized gas, radiation, or any combination of the aforementioned.
13. The wafer-level method of claim 5 wherein hardening the formable material layer includes transferring the module wafer to a hardening station and subjecting the formable material layer to radiation and/or heat to harden the formable material layer.