PEROVSKITE SOLAR BATTERY AND TANDEM SOLAR BATTERY INCLUDING SAME
The present invention relates to a perovskite solar battery and a tandem solar battery including the same and, more particularly, to a perovskite solar battery, which can ensure reliability and large area uniformity, and a tandem solar battery. According to the present invention, provided are the perovskite solar battery and the tandem solar battery including the same, the perovskite solar battery facilitating reliability and a band gap control by respectively applying a p-type Si thin film layer and an n-type Si thin film layer to a hole transport layer and an electron transport layer, and thus a lifespan and light conversion efficiency can increase.
1 - 22 . (canceled)
23 . A solar cell comprising:
a hole transport layer which is a p-type hole transport layer and having a composition containing silicon (Si);
a perovskite layer disposed on the hole transport layer; and
an electron transport layer disposed on the perovskite layer.
24 . The solar cell of claim 23 , wherein the hole transport layer is disposed on a transparent electrode disposed on a transparent substrate and a metal electrode layer is disposed above the electron transport layer.
25 . The solar cell of claim 23 , wherein
the solar cell further comprises a silicon solar cell comprising a crystalline silicon substrate and the hole transport layer is disposed above the silicon solar cell; and
the solar cell comprises a front electrode disposed above the electron transport layer.
26 . The solar cell of claim 25 , further comprising an inter-layer between the silicon solar cell and the hole transport layer.
27 . The solar cell of claim 24 , further comprising a buffer layer between the hole transport layer and the perovskite layer.
28 . The solar cell of claim 27 , wherein the buffer layer is made of one or two or more of NiO x , MoO x , CuSCN, and CuI.
29 . The solar cell of claim 24 , further comprising a transparent electrode between the electron transport layer and an electrode.
30 . The solar cell of claim 25 , wherein the silicon solar cell comprises:
a first intrinsic amorphous silicon layer (i-a-Si:H) disposed on a first surface of the crystalline silicon substrate and a second intrinsic amorphous silicon layer (i-a-Si:H) disposed on a second surface of the crystalline silicon substrate;
a first semiconductor-type amorphous silicon layer disposed on the first intrinsic amorphous silicon layer; and
a second semiconductor-type amorphous silicon layer disposed on a rear surface of the second intrinsic amorphous silicon layer.
31 . The solar cell of claim 23 , wherein the p-type silicon (Si) layer is made of one or two or more of amorphous silicon (p-a-Si), amorphous silicon oxide (p-a-SiO), amorphous silicon nitride (p-a-SiN), amorphous silicon carbide (-pa-SiC), amorphous silicon acid nitride (p-a-SiON), amorphous silicon carbonitride (p-a-SiCN), amorphous silicon germanium (p-a-SiGe), microcrystalline silicon (p-μc-Si), microcrystalline silicon oxide (p-μc-SiO), microcrystalline silicon carbide (p-μc-SiC), microcrystalline silicon nitride (p-μc-SiN), and microcrystalline silicon germanium (p-μc-SiGe).
32 . The solar cell of claim 23 , wherein the perovskite layer comprises a material having a chemical formula of FA 1-x Cs x PbBr y I 3-y , where 0≤x≤1 and 0≤y≤3.
33 . A solar cell, comprising:
an electron transport layer which is an n-type electron transport layer and comprising a composition containing silicon (Si);
a perovskite layer disposed on the electron transport layer; and
a hole transport layer on the perovskite layer.
34 . The solar cell of claim 33 , wherein
the electron transport layer is disposed on a transparent electrode disposed on a transparent substrate and
a metal electrode layer is disposed above the hole transport layer.
35 . The solar cell of claim 33 , wherein
the solar cell further comprises a silicon solar cell comprising a crystalline silicon substrate and the electron transport layer is disposed above the silicon solar cell;
the solar cell comprises a front electrode disposed on the hole transport layer.
36 . The solar cell of claim 35 , further comprising an inter-layer between the silicon solar cell and the electron transport layer.
37 . The solar cell of claim 34 , further comprising a buffer layer between the electron transport layer and the perovskite layer.
38 . The solar cell of claim 37 , wherein the buffer layer is made of at least of TiO x , ZnO, SnO 2 , CdS, PCBM, and C 60 .
39 . The solar cell of claim 34 , further comprising a transparent electrode between the hole transport layer and an electrode.
40 . The solar cell of claim 35 , wherein the silicon solar cell comprises a first intrinsic amorphous silicon layer (i-a-Si:H) disposed on a first surface of the crystalline silicon substrate and a second intrinsic amorphous silicon layer (i-a-Si:H) disposed on a second surface of the crystalline silicon substrate; a first semiconductor-type amorphous silicon layer disposed on the first intrinsic amorphous silicon layer; and a second semiconductor-type amorphous silicon layer disposed on a rear surface of the second intrinsic amorphous silicon layer.
41 . The solar cell of claim 33 , wherein the layer which is the n-type layer and having a composition containing silicon (Si) is made of one or two or more of amorphous silicon (n-a-Si), amorphous silicon oxide (n-a-SiO), amorphous silicon nitride (n-a-SiN), amorphous silicon carbide (n-a-SiC), and amorphous silicon oxynitride (n-a-SiON), amorphous silicon carbonitride (n-a-SiCN), amorphous silicon germanium (n-a-SiGe), microcrystalline silicon (n-μc-Si), microcrystalline silicon oxide (n-μc-SiO), microcrystalline silicon carbide (n-μc-SiC), microcrystalline silicon nitride (n-μc-SiN), microcrystalline silicon germanium (n-μc-SiGe).
42 . The solar cell of claim 33 , wherein the perovskite layer comprises a material having a chemical formula of FA 1-x Cs x PbBr y I 3-y , where 0≤x≤1 and 0≤y≤3.